Method and device for controlling operation using temperature deviation in multi-chip package
A multi-chip package includes a first die having temperature sensors and a second die. The first die generates temperature deviation information of m (m<n) bits based on temperature information of n bits produced by the temperature sensors. The first die provides the temperature deviation information of m bits rather than the temperature information of n bits to the second die. An internal operation of the second die is controlled using the temperature deviation information output by the first die.
1. A memory device comprising:
a first die including a first temperature sensor configured to generate first temperature information and a temperature deviation calculator configured to generate temperature deviation information based on the first temperature information;
a second die including a first memory cell array, and a first temperature compensation calculator configured to receive the temperature deviation information and to generate first temperature compensation information based on the temperature deviation information;
a third die including a second memory cell array, a second temperature compensation calculator configured to receive the temperature deviation information and to generate second temperature compensation information based on the temperature deviation information; and
a through silicon via (TSV) electrically connecting the first die, the second die and the third die,
wherein the temperature deviation information is provided to the second die and the third die from the first die via the TSV.
2. The memory device of claim 1 , wherein the first die, the second die and the third die are vertically stacked.
3. The memory device of claim 1 , wherein the first die includes a second temperature sensor configured to generate second temperature information.
4. The memory device of claim 1 , wherein a first temperature compensation coefficient of the second die is used to generate the first temperature compensation information,
a second temperature compensation coefficient of the third die is used to generate the second temperature compensation information, and
the first temperature compensation coefficient is different from the second temperature compensation coefficient.
5. The memory device of claim 1 , wherein the second die includes a first operation controller configured to control a refresh operation of the second die or a DC level of the second die, and
the third die includes a second operation controller configured to control a refresh operation of the third die or a DC level of the third die.