Imaging device and electronic apparatus
Imaging devices and electronic apparatuses with one or more shared pixel structures are provided. The shared pixel structure includes a plurality of photoelectric conversion devices or photodiodes. Each photodiode in the shared pixel structure is located within a rectangular area. The shared pixel structure also includes a plurality of shared transistors. The shared transistors in the shared pixel structure are located adjacent the photoelectric conversion devices of the shared pixel structure. The rectangular area can have two short sides and two long sides, with the shared transistors located along one of the long sides. In addition, a length of one or more of the transistors can be extended in a direction parallel to the long side of the rectangular area.
1. An imaging device, comprising:
a backside illumination type sensor that has a first shared-pixel structure and a second shared-pixel structure, wherein
the first shared-pixel structure includes:
eight photodiodes within a first rectangular area of the first shared-pixel structure;
a floating diffusion connected to the eight photodiodes; and
a transistor group comprising a plurality of shared transistors adjacent to a first side of the first rectangular area,
the plurality of shared transistors includes at least one of an amplification transistor, a select transistor, a reset transistor, or a dummy transistor,
the amplification transistor and the reset transistor are connected to the floating diffusion,
a layout of the reset transistor and the dummy transistor is same as a layout of the amplification transistor and the select transistor,
the second shared-pixel structure includes a plurality of photodiodes within a second rectangular area of the second shared-pixel structure,
the second rectangular area is on a second side of the first rectangular area,
a side of the second rectangular area is adjacent to the second side of the first rectangular area, and
the second side of the first rectangular area is shorter than the first side of the first rectangular area; and
a well contact between the second side of the first rectangular area of the first shared-pixel structure and the side of the second rectangular area of the second shared-pixel structure.
2. The imaging device of claim 1 , wherein
the first rectangular area has two short sides and two long sides, and
each shared transistor of the plurality of shared transistors is adjacent to one of the two long sides of the first rectangular area.
3. The imaging device of claim 1 , wherein at least one shared transistor of the plurality of shared transistors is arranged parallel to the first side of the first rectangular area.
4. The imaging device of claim 1 , wherein
a length of the amplification transistor along a dimension of the amplification transistor is longer than a length of at least one shared transistor of the plurality of shared transistors,
the dimension of the amplification transistor is parallel to the first side of the first rectangular area,
the length of the at least one shared transistor is along a dimension of the at least one shared transistor, and
the dimension of the at least one shared transistor is parallel to the first side of the first rectangular area.
5. The imaging device of claim 4 , wherein the length of the amplification transistor is 0.6 to 1.4 times of a pitch of the eight photodiodes within the first rectangular area of the first shared-pixel structure.
6. The imaging device of claim 1 , wherein
the eight photodiodes correspond to a photoelectric conversion element group that includes a sharing unit within the first rectangular area, and
the transistor group is symmetric with respect to the photoelectric conversion element group.
7. The imaging device of claim 1 , wherein
a length of the select transistor along a dimension of the select transistor is longer than a length of at least one shared transistor of the plurality of shared transistors,
the dimension of the select transistor is parallel to the first side of the first rectangular area,
the length of the at least one shared transistor is along a dimension of the at least one shared transistor, and
the dimension of the at least one shared transistor is parallel to the first side of the first rectangular area.
8. The imaging device of claim 1 , wherein at least one shared transistor of the plurality of shared transistors of the first shared-pixel structure is outside the first rectangular area.
9. The imaging device of claim 1 , wherein a position of the well contact is different from a position of the transistor group.
10. An electronic apparatus, comprising:
an imaging device that comprises:
a backside illumination type sensor, wherein
the backside illumination type sensor has a first shared-pixel structure and a second shared-pixel structure,
the first shared-pixel structure comprises:
eight photodiodes within a first rectangular area of the first shared-pixel structure;
a floating diffusion connected to the eight photodiodes; and
a transistor group comprising a plurality of shared transistors adjacent to a first side of the first rectangular area,
the plurality of shared transistors includes at least one of an amplification transistor, a select transistor, a reset transistor, or a dummy transistor,
the amplification transistor and the reset transistor are connected to the floating diffusion,
a layout of the reset transistor and the dummy transistor is same as a layout of the amplification transistor and the select transistor,
the second shared-pixel structure includes a plurality of photodiodes within a second rectangular area of the second shared-pixel structure,
the second rectangular area is on a second side of the first rectangular area,
a side of the second rectangular area is adjacent to the second side of the first rectangular area, and
the second side of the first rectangular area is shorter than the first side of the first rectangular area; and
a well contact between the second side of the first rectangular area of the first shared-pixel structure and the side of the second rectangular area of the second shared-pixel structure.
11. The electronic apparatus of claim 10 , wherein
the first rectangular area has two short sides and two long sides, and
each shared transistor of the plurality of shared transistors is adjacent to one of the two long sides of the first rectangular area.
12. The electronic apparatus of claim 10 , wherein at least one shared transistor of the plurality of shared transistors is arranged parallel to the first side of the first rectangular area.
13. The electronic apparatus of claim 10 , wherein
a length of the amplification transistor along a dimension of the amplification transistor is longer than a length of at least one shared transistor of the plurality of shared transistors,
the dimension of the amplification transistor is parallel to the first side of the first rectangular area,
the length of the at least one shared transistor is along a dimension of the at least one shared transistor, and
the dimension of the at least one shared transistor is parallel to the first side of the first rectangular area.
14. The electronic apparatus of claim 10 , wherein
the eight photodiodes correspond to a photoelectric conversion element group that includes a sharing unit within the first rectangular area, and
the transistor group is symmetric with respect to the photoelectric conversion element group.
15. The electronic apparatus of claim 10 , wherein a length of the select transistor along a dimension of the select transistor is longer than a length of at least one shared transistor of the plurality of shared transistors,
the dimension of the select transistor is parallel to the first side of the first rectangular area,
the length of the at least one shared transistor is along a dimension of the at least one shared transistor, and
the dimension of the at least one shared transistor is parallel to the first side of the first rectangular area.
16. The electronic apparatus of claim 10 , wherein at least one shared transistor of the plurality of shared transistors of the first shared-pixel structure is outside the first rectangular area.