Pattern forming material and pattern forming method

1. A pattern forming method comprising:

coating a pattern forming material on a processing target material, the pattern forming material having a polymer comprising a plurality of monomer units bonded to each other, the bonded monomer units each including:

an ester structure having a first carbonyl group; and

at least one second carbonyl group bonded to the ester structure as a side chain(s), and a second carbonyl group among second carbonyl groups,

which is farthest from a main chain of the polymer constituting the pattern forming material, being in a linear chain state;

patterning the pattern forming material;

exposing the patterned pattern forming material to gas or liquid of a metallic precursor to cause the pattern forming material to contain metal; and

processing the processing target material using the pattern forming material containing the metal as a mask; wherein

in the patterning, the pattern forming material is patterned using a CDE (Chemical Dry Etching) or an RIE (Reactive Ion Etching) process.

2. The method of claim 1 , further comprising:

after coating the pattern forming material on the processing target material,

forming an antireflective film on the pattern forming material; and

forming an SOG (Spin-On Glass) film on the antireflective film.

3. The method of claim 2 , wherein the metallic precursor is any of TMA (Trimethylaluminum), TiCI 4 , WCI 6 , and VCI 4 .

4. The method of claim 1 , wherein the metallic precursor is any of TMA (Trimethylaluminum), TiCI 4 , WCI 6 , and VCI 4 .

5. The method of claim 1 , wherein no cyclic structure is bonded to the second carbonyl group farthest from the ester structure.

6. The method of claim 1 , wherein the monomer units include at least one of (meth)acrylic acetic anhydride, acetonyl (meth)acrylate, (meth)acrylic acid-3-oxobutanoic anhydride, (meth)acrylic acid-2,4-dioxopentyl ester, and 2-(acetoacetoxy)ethyl (meth)acrylate.

7. The method of claim 6 , wherein the monomer units include only one of (meth)acrylic acetic anhydride, acetonyl (meth)acrylate, (meth)acrylic acid-3-oxobutanoic anhydride, (meth)acrylic acid-2,4-dioxopentyl ester, and 2-(acetoacetoxy)ethyl (meth)acrylate.

8. The method of claim 1 , comprising a copolymer of the monomer unit and any of styrene, hydroxystyrene, methyl (meth)acrylate, ethyl (meth)acrylate, and hydroxy ethyl (meth)acrylate.

9. The method of claim 1 , further comprising a solvent dissolving the polymer, wherein

the solvent is any of 1-butanol, N,N-dimethylformamide, N-methylpyrrolidone, γ-butyrolactone, acetone, anisole, isobutyl alcohol, isopropyl alcohol, isopentyl alcohol, ethylene glycol monoethyl ether, ethylene glycol monoethyl ether acetate, ethylene glycol mono-n-butyl ether, ethylene glycol monomethyl ether, ethylene glycol monomethyl ether acetate, xylene, cresol, cyclohexanol, cyclohexanone, tetrahydrofuran, toluene, ethyl lactate, propylene glycol monoethyl ether, propylene glycol monoethyl ether acetate, propylene glycol mono-n-butyl ether, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, methyl ethyl ketone, methyl cyclohexanol, methyl cyclohexanone, methyl-n-butyl ketone, isobutyl acetate, isopropyl acetate, isopentyl acetate, ethyl acetate, n-butyl acetate, n-propyl acetate, or n-pentyl acetate.

10. The method of claim 1 , wherein the polymer is a homopolymer or a copolymer composed of the monomer units.

11. The method of claim 1 further comprising:

forming a resist film above the pattern forming material;

patterning the resist film; and

patterning the pattern forming material using a CDE or an RIE process.

12. The method of claim 1 , wherein

the processing target material is processed using a CDE or an RIE process.