Memory circuit and electronic device
A memory circuit according to an embodiment includes: a first inverter circuit including a first p-channel MOS transistor and a first n-channel MOS transistor; a second inverter circuit cross-coupled with the first inverter and including a second p-channel MOS transistor and a second n-channel MOS transistor; a third n-channel MOS transistor in which one of a source and drain terminals is connected to a first output terminal of the first inverter circuit, and a gate terminal is connected to a first wiring line; a fourth n-channel MOS transistor connected to the third n-channel MOS transistor; a fifth n-channel MOS transistor in which one of a source and drain terminals is connected to a second output terminal of the second inverter circuit; and a sixth n-channel MOS transistor connected to the fifth n-channel MOS transistor.
1. A memory circuit comprising:
a first inverter circuit including a first input terminal, a first output terminal, a first p-channel MOS transistor in which a source terminal is connected to a first power supply line and a gate terminal is connected to the first input terminal, and a first n-channel MOS transistor in which a source terminal is connected to a second power supply line, a drain terminal is connected to a drain terminal of the first p-channel MOS transistor, and a gate terminal is connected to the first input terminal;
a second inverter circuit including a second input terminal connected to the first output terminal, a second output terminal connected to the first input terminal, a second p-channel MOS transistor in which a source terminal is connected to the first power supply line and a gate terminal is connected to the second input terminal, and a second n-channel MOS transistor in which a source terminal is connected to the second power supply line, a drain terminal is connected to a drain terminal of the second p-channel MOS transistor, and a gate terminal is connected to the second input terminal;
a third n-channel MOS transistor in which one of a source terminal and a drain terminal is connected to the first output terminal and the second input terminal, the source terminal is connected to the drain terminal, and a gate terminal is connected to a first wiring line;
a fourth n-channel MOS transistor in which one of a source terminal and a drain terminal is connected to the other of the source terminal and the drain terminal of the third re-channel MOS transistor, and the other of the source terminal and the drain terminal is connected to a second wiring line, and a gate terminal is connected to a third wiring line;
a fifth n-channel MOS transistor in which one of a source terminal and a drain terminal is connected to the second output terminal and the first input terminal, the source terminal is connected to the drain terminal, and a gate terminal is connected to the first wiring line; and
a sixth n-channel MOS transistor in which one of a source terminal and a drain terminal is connected to the other of the source terminal and the drain terminal of the fifth n-channel MOS transistor, the other of the source terminal and the drain terminal is connected to a fourth wiring line, and a gate terminal is connected to the third wiring line.
2. The memory circuit according to claim 1 , further comprising:
a third p-channel MOS transistor, in which a source terminal is connected to a first power supply and a drain terminal is connected to the first wiring line, the third p-channel MOS transistor including a gate insulating film that is thicker than gate insulating films of the first p-channel MOS transistor and the second p-channel MOS transistor; and
a seventh n-channel MOS transistor, in which a source terminal is connected to a second power supply and a drain terminal is connected to the first wiring line, the seventh re-channel MOS transistor including a gate insulating film that is thicker than gate insulating films of the first to fourth n-channel MOS transistors.
3. The memory circuit according to claim 2 , further comprising a fourth p-channel MOS transistor in which a gate insulating film is thicker than the gate insulating films of the first p-channel MOS transistor and the second p-channel MOS transistor, the fourth p-channel MOS transistor being disposed between the drain terminal of the third p-channel MOS transistor and the first power supply.
4. The memory circuit according to claim 1 , further comprising a control circuit configured to supply a voltage to the third wiring line for turning on the fourth n-channel MOS transistor and the sixth n-channel MOS transistor, supply a first voltage to one of the second wiring line and the fourth wiring line and a second voltage that is lower than the first voltage to the other of the second wiring line and the fourth wiring line, and supply a write voltage to the first wiring line.
5. An electronic device comprising:
the memory circuit according to claim 1 ;
a memory that stores a program; and
a processor that executes processing on the memory circuit in accordance with the program stored in the memory.