Solid-state imaging device, manufacturing method of solid-state imaging device, and electronic device
The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate and multiple photoelectric converters that are formed on the substrate, an insulating film forms an embedded element separating unit. The element separating unit is configured of an insulating film having a fixed charge that is formed so as to coat the inner wall face of a groove portion, within the groove portion which is formed in the depth direction from the light input side of the substrate.
1. A solid-state imaging device comprising:
a semiconductor substrate;
a first photoelectric converter in the semiconductor substrate;
a second photoelectric converter adjacent to the first photoelectric converter in the semiconductor substrate;
a third photoelectric converter adjacent to the second photoelectric converter in the semiconductor substrate;
a first groove portion disposed between the first and second photoelectric converters,
wherein the first groove portion extends in a depth direction in the semiconductor substrate,
wherein the first groove portion includes a first portion of a first film including an oxide of hafnium and a first portion of a silicon oxide film, and
wherein a first hollow portion is disposed within the first portion of the silicon oxide film; and
a second groove portion disposed between the second and third photoelectric converters,
wherein the second groove portion extends in the depth direction in the semiconductor substrate,
wherein the second groove portion includes a second portion of the first film and a second portion of the silicon oxide film,
wherein a second hollow portion is disposed within the second portion of the silicon oxide film, and
wherein a third portion of the first film is disposed along the semiconductor substrate between the first groove portion and the second groove portion.
2. The solid-state imaging device according to claim 1 , wherein a thickness of the first film is thinner than a thickness of the silicon oxide film above the semiconductor substrate.
3. The solid-state imaging device according to claim 1 , wherein the semiconductor substrate includes a first side that is a light-incident side and a second side opposite to the first side, and wherein a wiring layer is disposed at the second side of the semiconductor substrate.
4. The solid-state imaging device according to claim 3 , further comprising:
a light-blocking film disposed at the first side of the semiconductor substrate.
5. The solid-state imaging device according to claim 4 , further comprising:
a color filter disposed above the light-blocking film.
6. The solid-state imaging device according to claim 5 , further comprising:
an on-chip lens disposed above the color filter.
7. The solid-state imaging device according to claim 1 , wherein the silicon oxide film is configured to close off the first groove portion at an opening end of the first groove portion.
8. The solid-state imaging device according to claim 1 , further comprising:
a light-blocking film disposed above at least a portion of the first groove portion.