Magnetoelectric spin orbit logic based full adder

1. An apparatus comprising:

a 3-bit carry generation structure including at least three cells comprising a magnetoelectric material and a spin orbit material, wherein the 3-bit carry generation structure is to perform a minority logic operation on first, second, and third inputs to generate a carry output; and

a multi-bit sum generation structure including at least three cells comprising a magnetoelectric material and a spin orbit material, wherein the carry output of the 3-bit carry generation structure is received by the multi-bit sum generation structure, and wherein the multi-bit sum generation structure is to perform a minority logic operation on the first, second, and third inputs and the carry output to generate a sum output.

2. The apparatus of claim 1 , wherein at least one cell of the at least three cells of the 3-bit carry generation structure comprises:

a magnet having a first portion and a second portion;

a stack of layers, a portion of which is adjacent to the first portion of the magnet, wherein the stack of layers comprises a spin orbit material;

a layer adjacent to the second portion, the layer comprising a magnetoelectric material;

a conductor adjacent to the layer;

a first device coupled to the magnet, wherein the first device is coupled to a first power supply node and is controllable by a clock; and

a second device coupled to a second supply node and to a layer of the stack of layers, wherein the second device is controllable by the clock.

3. The apparatus of claim 2 , wherein the magnet is a first magnet, wherein the stack of layers is a first stack of layers, wherein the clock is a first clock, wherein the conductor is a first conductor, wherein the layer adjacent to the second portion of the first magnet is a first layer, wherein at least another cell of the at least three cells of the 3-bit carry generation structure comprises:

a second magnet having a first portion and a second portion;

a second stack of layers, a portion of which is adjacent to the first portion of the second magnet, wherein the second stack of layers comprises a spin orbit material;

a second layer adjacent to the second portion of the second magnet, the second layer comprising a magnetoelectric material;

a second conductor adjacent to the second layer and to a portion of the first stack of layers;

a third conductor adjacent to a portion of the second stack of layers;

a third device coupled to the second magnet, wherein the third device is coupled to the first power supply node and is controllable by a second clock; and

a fourth device coupled to the second supply node and to a layer of the second stack of layers, wherein the third device is controllable by the second clock.

4. The apparatus of claim 3 , wherein the first clock has a first phase, wherein the second clock has a second phase, and wherein the first phase is different from the second phase.

5. The apparatus of claim 3 , wherein the first, second, third, and fourth devices have the same conductivity type.

6. The apparatus of claim 3 , wherein the first and third devices have a first conductivity type, and wherein the second and fourth devices have a second conductivity type.

7. The apparatus of claim 3 , wherein the first layer and the second layer include one or more of: Cr, O, or a multiferroic material.

8. The apparatus of claim 7 , wherein the multiferroic material includes one of: BiFeO 3 , LuFeO 2 , LuFe 2 O 4 , or La doped BiFeO 3 , or wherein the multiferroic material includes one of: Bi, Fe, O, Lu, or La.

9. The apparatus of claim 7 , wherein the first stack of layers and the second stack of layers comprise a material which includes one or more of: β-Ta, β-W, W, Pt, Cu doped with Iridium, Cu doped with Bismuth, or Cu doped an element of 3d, 4d, 5d, 4f, or 5f of periodic table groups.

10. The apparatus of claim 3 , wherein the first and second magnets comprise a paramagnet or a ferromagnet, or wherein the first and second magnets comprises a material which includes one or more of: Pt, Pd, W, Ce, Al, Li, Mg, Na, Cr, O, Co, Dy, Er, Eu, Gd, Fe, Nd, K, Pr, Sm, Tb, Tm, or V.

11. The apparatus of claim 3 , wherein the first and second magnets comprise one or a combination of materials which includes one or more of: a Heusler alloy, Co, Fe, Ni, Gd, B, Ge, Ga, permalloy, or Yttrium Iron Garnet (YIG), and wherein the Heusler alloy is a material which includes one or more of: Cu, Mn, Al, In, Sn, Ni, Sb, Ga, Co, Fe, Si, Pd, Sb, V, or Ru.

12. The apparatus of claim 2 , wherein the multi-bit sum generation structure comprises a 5-input sum generation structure including three cells comprising a magnetoelectric material and a spin orbit material, wherein each of the three cells is coupled to a transistor having a same drive strength compared to transistors coupled to two of the at least three cells of the 3-bit carry generation structure that provide carry outputs.

13. The apparatus of claim 1 , wherein the multi-bit sum generation structure comprises a 4-input sum generation structure including three cells comprising a magnetoelectric material and a spin orbit material, wherein transistors coupled to the 3-bit carry generation structure providing the carry output have twice a drive strength compared to a transistor coupled to another of the three cells of the multi-bit sum generation structure.

14. An apparatus comprising:

a first logic device including: a spin orbit material, a magnetostrictive material, and at least two transistors to operate using a first clock;

a second logic device including: a spin orbit coupling material, a magnetostrictive material, and at least two transistors to operate using the first clock;

a third logic device including: a spin orbit coupling material, a magnetostrictive material, and at least two transistors to operate using the first clock;

a fourth logic device coupled to the first, second and third logic devices, the fourth logic device including: a spin orbit coupling material, a magnetostrictive material, and at least two transistors to operate using a second clock; and

a fifth logic device coupled to the fourth logic device, the fifth logic device including: a spin orbit coupling material, a magnetostrictive material, and at least two transistors to operate using a third clock, wherein the first, second, and third clocks have different phases.

15. The apparatus of claim 14 , wherein the first logic device is to receive a first variable input, wherein the second logic device is to receive a second variable input, wherein the third logic device is to receive a third input, and wherein the fourth logic device is to provide a carry output which is a minority function of the first and second variable inputs and the third input.

16. The apparatus of claim 15 , wherein the fifth logic device is to receive the carry output, and wherein the fifth logic device is coupled to:

a sixth logic device to receive the first variable input, wherein the sixth logic device is coupled to the fifth logic device, and wherein the sixth logic device comprises a spin orbit material, a magnetostrictive material, and at least two transistors to operate using the second clock;

a seventh logic device to receive the second variable input, wherein the seventh logic device is coupled to the fifth logic device; and wherein the seventh logic device comprises a spin orbit material, a magnetostrictive material, and at least two transistors to operate using the second clock; and

an eighth logic device to receive the third input, wherein the eighth logic device is coupled to the fifth logic device, and wherein the eighth logic device comprises a spin orbit material, a magnetostrictive material, and at least two transistors to operate using the second clock.

17. The apparatus of claim 14 , wherein at least one of the magnetostrictive materials includes one or more of: Cr, O, or a multiferroic material.

18. The apparatus of claim 17 , wherein the multiferroic material includes one of: BiFeO 3 , LuFeO 2 , LuFe 2 O 4 , or La doped BiFeO 3 , or wherein the multiferroic material includes one of: Bi, Fe, O, Lu, or La.

19. The apparatus of claim 16 , wherein at least one of the spin orbit materials includes one or more of: β-Ta, β-W, W, Pt, Cu doped with Iridium, Cu doped with Bismuth, or Cu doped an element of 3d, 4d, 5d, 4f, or 5f of periodic table groups.

20. A system comprising:

a memory;

a processor coupled to the memory, wherein the processor includes an adder which comprises:

a 3-bit carry generation structure including at least three cells comprising a magnetoelectric material and a spin orbit material, wherein the 3-bit carry generation structure is to perform a minority logic operation on first, second, and third inputs to generate a carry output; and

a multi-bit sum generation structure including at least four cells comprising a magnetoelectric material and a spin orbit material, wherein the carry output of the 3-bit carry generation structure is coupled to an input of the multi-bit sum generation structure, and wherein the multi-bit sum generation structure is to perform a minority logic operation on the first, second, and third inputs and the carry output to generate a sum output; and

a wireless interface to allow the processor to communicate with another device.

21. The system of claim 20 , wherein at least one cell of the at least three cells of the 3-bit carry generation structure comprises:

a magnet having a first portion and a second portion;

a stack of layers, a portion of which is adjacent to the first portion of the magnet, wherein the stack of layers comprises a spin orbit material;

a layer adjacent to the second portion, the layer comprising a magnetoelectric material;

a conductor adjacent to the layer;

a first device coupled to the magnet, wherein the first device is coupled to a first power supply node and is controllable by a clock; and

a second device coupled to a second supply node and to a layer of the stack of layers, wherein the second device is controllable by the clock.

22. The system of claim 21 , wherein the magnet is a first magnet, wherein the stack of layers is a first stack of layers, wherein the clock is a first clock, wherein the conductor is a first conductor, wherein the layer adjacent to the second portion of the first magnet, is a first layer, wherein at least another cell of the at least three cells of the 3-bit carry generation structure comprises:

a second magnet having a first portion and a second portion;

a second stack of layers, a portion of which is adjacent to the first portion of the second magnet, wherein the second stack of layers comprises a spin orbit material;

a second layer adjacent to the second portion of the second magnet, the second layer comprising a magnetoelectric material;

a second conductor adjacent to the second layer and to a portion of the first stack of layers;

a third conductor adjacent to a portion of the second stack of layers;

a third device coupled to the second magnet, wherein the third device is coupled to the first power supply node and is controllable by a second clock;

a fourth device coupled to the second supply node and to a layer of the second stack of layers, wherein the third device is controllable by the second clock.

23. The system of claim 22 , wherein the first clock has a first phase, wherein the second clock has a second phase, and wherein the first phase is different from the second phase.