Methods of reducing wafer thickness
A semiconductor wafer has a base material with a first thickness and first and second surfaces. A wafer scribe mark is disposed on the first surface of the base material. A portion of an interior region of the second surface of the base material is removed to a second thickness less than the first thickness, while leaving an edge support ring of the base material of the first thickness and an asymmetric width around the semiconductor wafer. The second thickness of the base material is less than 75 micrometers. The wafer scribe mark is disposed within the edge support ring. The removed portion of the interior region of the second surface of the base material is vertically offset from the wafer scribe mark. A width of the edge support ring is wider to encompass the wafer scribe mark and narrower elsewhere around the semiconductor wafer.
1. A method of thinning a semiconductor wafer, the method comprising:
providing a semiconductor wafer including a base material with a first thickness between a first surface and a second surface of the base material;
providing a wafer scribe identification mark oriented in a straight line on the first surface of the base material; and
removing a portion of an interior region of the second surface of the base material to leave a second thickness and an edge support ring of the base material, the edge support ring having the first thickness and an asymmetric width around the semiconductor wafer;
wherein the wafer scribe identification mark is on the edge support ring;
wherein a widest width of the asymmetric width is between 1.5-2.0 millimeters wider than a narrowest width of the asymmetric width; and
wherein the edge support ring has a uniform thickness around the semiconductor wafer.
2. The method of claim 1 , wherein the second thickness of the base material is less than 75 micrometers.
3. The method of claim 1 , wherein the second thickness of the base material is 10-50 micrometers.
4. The method of claim 1 , wherein the removed portion of the interior region of the second surface of the base material is vertically offset from the wafer scribe identification mark.
5. The method of claim 1 , wherein a width of the edge support ring is wider to encompass the wafer scribe identification mark and narrower elsewhere around the semiconductor wafer.
6. The method of claim 1 , wherein the asymmetric width of the edge support ring is 3.0-5.0 millimeters to encompass the wafer scribe identification mark and 2.0-4.2 millimeters elsewhere around the semiconductor wafer.
7. A method of thinning a semiconductor wafer, the method comprising:
providing a semiconductor wafer including a base material;
providing a wafer scribe identification mark on a first surface of the base material, the wafer scribe identification mark comprising a unique identifier oriented in a straight line; and
removing a portion of the base material from a second surface opposite the first surface and leaving an edge support ring comprised of the base material with an asymmetric width around the semiconductor wafer;
wherein the wafer scribe identification mark is disposed within the edge support ring;
wherein a widest width of the asymmetric width is between 1.5-2.0 millimeters wider than a narrowest width of the asymmetric width; and
wherein the edge support ring has a uniform height around the semiconductor wafer.
8. The method of claim 7 , wherein a thickness of a remaining portion of the base material after removing the portion of the base material from the second surface is less than 75 micrometers.
9. The method of claim 7 , wherein a thickness of a remaining portion of the base material after removing the portion of the base material from the second surface is 10-50 micrometers.
10. The method of claim 7 , wherein a width of the semiconductor wafer is 150-300 millimeters.
11. The method of claim 7 , wherein the removed portion of the base material is vertically offset from the wafer scribe identification mark.
12. The method of claim 7 , wherein a width of the edge support ring is wider to encompass the wafer scribe identification mark and narrower elsewhere around the semiconductor wafer.
13. The method of claim 7 , wherein the asymmetric width of the edge support ring is 3.0-5.0 millimeters to encompass the wafer scribe identification mark and 2.0-4.2 millimeters elsewhere around the semiconductor wafer.
14. A method of thinning a semiconductor wafer including a base material having a first thickness, the method comprising:
providing a wafer scribe identification mark oriented in a straight line on a first surface of the base material; and
forming an interior region in a second surface of the base material with a second thickness of the base material leaving an edge support ring of the base material, the edge support ring having an asymmetric width around the semiconductor wafer;
wherein the second thickness is less than the first thickness;
wherein the wafer scribe identification mark is disposed within the edge support ring;
wherein a widest width of the asymmetric width is between 1.5-2.0 millimeters wider than a narrowest width of the asymmetric width; and
wherein the first thickness of the edge support ring is uniform around the semiconductor wafer.
15. The method of claim 14 , wherein the second thickness of the base material is less than 75 micrometers.
16. The method of claim 14 , wherein the second thickness of the base material is 10-50 micrometers.
17. The method of claim 14 , wherein a width of the semiconductor wafer is 150-300 millimeters.
18. The method of claim 14 , wherein the interior region of the base material is vertically offset from the wafer scribe identification mark.
19. The method of claim 14 , wherein a width of the edge support ring is wider to encompass the wafer scribe identification mark and narrower elsewhere around the semiconductor wafer.
20. The method of claim 14 , wherein the asymmetric width of the edge support ring is 3.0-5.0 millimeters to encompass the wafer scribe identification mark and 2.0-4.2 millimeters elsewhere around the semiconductor wafer.