Integrated antenna using through silicon vias
Systems and methods of manufacture are disclosed for semiconductor device assemblies having a front side metallurgy portion, a substrate layer adjacent to the front side metallurgy portion, a plurality of through-silicon-vias (TSVs) in the substrate layer, metallic conductors located within at least a portion of the plurality of TSVs, and at least one conductive connection circuitry between the metallic conductors and the front side metallurgy portion. The plurality of TSVs with metallic conductors located within are configured to form an antenna structure. Selectively breakable connective circuitry is used to form and/or tune the antenna structure.
1. A semiconductor device assembly comprising:
a front side metallurgy portion;
a substrate layer adjacent to the front side metallurgy portion;
a plurality of through-silicon-vias (TSVs) in the substrate layer;
metallic conductors located within at least a portion of the plurality of TSVs; at least one conductive connection circuitry between the metallic conductors and the front side metallurgy portion, wherein the at least one conductive connection is between a first portion of the metallic conductors and a first portion of the front side metallurgy portion and the semiconductor device assembly further comprises:
a second conductive connection between a second portion of the metallic conductors and a second portion of the front side metallurgy portion; and
wherein the portion of the plurality of TSVs with metallic conductors located within are configured to form an antenna structure.
2. The semiconductor device assembly of claim 1 wherein each of the plurality of TSVs is generally cylindrical in shape.
3. The semiconductor device assembly of claim 2 wherein the generally cylindrical shape has a diameter of substantially 2 microns to 30 microns and a depth of substantially 20 microns to 100 microns.
4. The semiconductor device assembly of claim 2 wherein the generally cylindrical shape has a diameter of substantially 8 microns and a depth of substantially 65 microns.
5. The semiconductor device assembly of claim 1 wherein the antenna structure covers an area up to substantially 20 mm 2 .
6. The semiconductor device assembly of claim 1 wherein the antenna structure covers an area of substantially 2 mm 2 to 6 mm 2 .
7. The semiconductor device assembly of claim 1 further comprising:
third conductive connections between each of the metallic conductors located within at least a portion of the plurality of TSVs.
8. The semiconductor device assembly of claim 7 wherein the third conductive connections between each of the metallic conductors located within at least a portion of the plurality of TSVs further comprise selectively breakable connections.
9. The semiconductor device assembly of claim 8 wherein selected ones of the selectively breakable connections are broken to tune the antenna structure.
10. The semiconductor device assembly of claim 1 wherein the antenna structure comprises a 5G antenna structure.
11. A method of making a semiconductor device assembly comprising:
providing a front side metallurgy portion;
providing a substrate layer adjacent to the front side metallurgy portion;
providing a plurality of through-silicon-vias (TSVs) in the substrate layer;
providing metallic conductors located within at least a portion of the plurality of TSVs;
providing at least one conductive connection between the metallic conductors and the front side metallurgy portion;
connecting a first portion of the metallic conductors and a first portion of the front side metallurgy portion to form the at least one conductive connection;
providing a second conductive connection between a second portion of the metallic conductors and a second portion of the front side metallurgy portion; and
configuring the portion of the plurality of TSVs with metallic conductors located within to form an antenna structure.
12. The method of making a semiconductor device assembly of claim 11 further comprising:
forming each of the plurality of TSVs in a substantially cylindrical shape.
13. The method of making a semiconductor device assembly of claim 12 further comprising:
forming each generally cylindrical shape with a diameter of substantially 2 microns to 30 microns and a height of substantially 20 microns to 100 microns.
14. The method of making a semiconductor device assembly of claim 12 further comprising:
forming each generally cylindrical shape with a diameter of substantially 8 microns and a height of substantially 65 microns.
15. The method of making a semiconductor device assembly of claim 11 further comprising:
forming the antenna structure to cover an area ranging up to substantially 20 mm 2 .
16. The method of making a semiconductor device assembly of claim 11 further comprising:
forming the antenna structure to cover an area ranging from substantially 2 mm 2 to 6 mm 2 .
17. The method of making a semiconductor device assembly of claim 11 further comprising:
providing third conductive connections between each of the metallic conductors located within at least a portion of the plurality of TSVs.
18. The method of making a semiconductor device assembly of claim 17 further comprising:
providing selectively breakable connections as the third conductive connections between each of the metallic conductors located within at least a portion of the plurality of TSVs.
19. The method of making a semiconductor device assembly of claim 18 further comprising:
breaking selected ones of the selectively breakable connections to tune the antenna structure.
20. The method of making a semiconductor device assembly of claim 11 wherein the step of configuring the portion of the plurality of TSVs with metallic conductors located within to form an antenna structure comprises forming a 5G antenna structure.