Compositions and methods using same for deposition of silicon-containing film
Compositions for forming a silicon-containing film such as without limitation a silicon oxide, silicon nitride, silicon oxynitride, a carbon-doped silicon nitride, or a carbon-doped silicon oxide film on at least a surface of a substrate having a surface feature. In one aspect, the composition comprises at least one compound is selected from the group consisting of a siloxane, a trisilylamine-based compound, and a cyclic trisilazane compound.
1. A composition, comprising:
at least one silicon-containing compound from among the compounds selected from the group consisting of:
wherein substituent R is each independently selected from a hydrogen atom; a halide atom; a linear C 1 to C 10 alkyl group; a branched C 3 to C 10 alkyl group; a linear or branched C 3 to C 12 alkenyl group; a linear or branched C 3 to C 12 alkynyl group; a C 4 to C 10 cyclic alkyl group; and a C 6 to C 10 aryl group; and
wherein the composition is configured to form a silicon-containing film on a substrate having two or more adjacent surface features;
wherein the silicon-containing film has a post-thermal anneal wet etch rate that is between 4.2 and 4.7 nanometers per minute; and
wherein the silicon-containing film is seamless between the two or more adjacent surface features.
2. The composition of claim 1 further comprising at least one solvent selected from the group consisting of ether, tertiary amine, alkyl hydrocarbon, aromatic hydrocarbon, and tertiary aminoether.
3. The composition of claim 1 further comprising at least one solvent selected from the group consisting of octane, ethylcyclohexane, cyclooctane, and toluene.
4. The composition of claim 1 wherein the at least one silicon-containing compound is substantially free of halide ions.
5. The composition of claim 1 wherein the at least one silicon-containing compound is substantially free of metal ions.
6. The composition of claim 1 wherein the at least one silicon-containing compound comprises less than 5 ppm of halide ions.
7. The composition of claim 6 wherein the at least one silicon-containing compound comprises less than 5 ppm of metal ions.
8. The composition of claim 7 wherein the at least one silicon-containing compound comprises less than 3 ppm of metal ions.
9. The composition of claim 1 wherein the at least one silicon-containing compound comprises less than 3 ppm of halide ions.
10. The composition of claim 1 wherein the at least one silicon-containing compound comprises 0 ppm of halide ions.
11. The composition of claim 10 wherein the at least one silicon-containing compound comprises less than 5 ppm of metal ions.
12. The composition of claim 11 wherein the at least one silicon-containing compound comprises less than 3 ppm of metal ions.