Wavelength converters, including polarization-enhanced carrier capture converters, for solid state lighting devices, and associated systems and methods

1. A method for operating a radiative structure, comprising:

receiving radiation of a first wavelength at a first region of a solid state radiative semiconductor structure, the first region having a first material polarization and a first density of electrons and holes in response to receiving the radiation of the first wavelength;

transmitting electrons from the first region to a second region of the solid state radiative semiconductor structure to increase a density of the electrons at the second region, the second region having a second material polarization different than the first material polarization; and

combining electrons with holes at the second region to radiate energy at a second wavelength different than the first wavelength.

2. The method of claim 1 wherein the first region is one of a plurality of first regions, and the second region is one of a plurality of second regions, wherein individual second regions are positioned between consecutive first regions, and wherein transmitting electrons includes transmitting electrons from a first region on one side of the second region, and wherein the method further comprises transmitting holes to the second region from a first region on an opposite side of the second region.

3. The method of claim 1 wherein radiating energy at the second wavelength includes radiating energy at the second wavelength in the visible spectrum, without radiating the energy from a phosphor.

4. The method of claim 1 wherein the first and second material polarizations are non-zero.

5. A lighting device, comprising:

a light source configured to emit light at a first wavelength; and

a wavelength converter including a first semiconductor layer positioned to receive the light at the first wavelength from the light source, and a second semiconductor layer stacked over the first semiconductor layer to produce a potential gradient that drives at least one of electrons and holes from the first semiconductor layer to the second semiconductor layer such that they radiatively recombine in the second semiconductor layer to thereby emit light having a second wavelength different than the first wavelength, wherein—

the first semiconductor layer has a first non-zero concentration of a constituent and the second semiconductor layer has a second non-zero concentration of the constituent different than the first concentration, and

the first semiconductor layer has a first crystal orientation and the second semiconductor layer has a second crystal orientation the same as the first crystal orientation.

6. The lighting device of claim 5 wherein the first and second semiconductor layers comprise gallium nitride, and wherein the constituent is indium.

7. The lighting device of claim 5 wherein the second concentration is higher than the first concentration.

8. The lighting device of claim 7 wherein the second concentration is more than twice as high as the first concentration.

9. The lighting device of claim 5 wherein the first and second semiconductor layers comprise zinc oxide.

10. The lighting device of claim 5 wherein a thickness of the first layer is about five times greater than a thickness of the second layer.

11. The lighting device of claim 5 wherein the wavelength converter is attached to an emission surface of the light source.

12. The lighting device of claim 5 wherein the first and second semiconductor layers have different polarizations.

13. A method of forming a lighting device, the method comprising:

growing a first epitaxial layer on an epitaxial substrate, wherein the first epitaxial layer has a selected crystal orientation;

doping the first epitaxial layer to have a first concentration of a constituent;

growing a second epitaxial layer on the first epitaxial layer, wherein the second epitaxial layer has the selected crystal orientation;

doping the second epitaxial layer to have a second concentration of the constituent different than the first concentration; and

positioning the first epitaxial layer to receive light emitted at a first wavelength from a light source,

wherein the first and second epitaxial layers produce a potential gradient that drives at least one of electrons and holes from the first epitaxial layer to the second epitaxial layer such that they radiatively recombine in the second epitaxial layer to thereby emit light having a second wavelength different than the first wavelength.

14. The method of claim 13 , further comprising cutting the epitaxial substrate along a selected angle that corresponds to the selected crystal orientation before growing the first epitaxial layer.

15. The method of claim 13 wherein the first and second concentrations of the constituent are non-zero.

16. The method of claim 13 wherein positioning the first epitaxial layer to receive light from the light source includes attaching the first epitaxial layer to an emission surface of the light source.

17. The method of claim 13 wherein the selected crystal orientation is a polar plane.

18. The method of claim 17 wherein the selected crystal orientation is the c-plane.

19. The method of claim 13 wherein the first and second epitaxial layers comprise gallium nitride, and wherein the constituent is indium.

20. The method of claim 13 , further comprising coupling the light source to a substrate, wherein the substrate carries the light source, and wherein the light source carries the first and second epitaxial layers.