Methods for acquiring planar view stem images of device structures

1. A method of preparing a sample, the method comprising:

milling an initial deep lamella within a wafer using a focused ion beam, the initial deep lamella comprising at least one internal structure within an upper portion of the initial deep lamella;

lifting the initial deep lamella out of the wafer;

placing the initial deep lamella on an upper surface of the wafer on a lateral side of the initial deep lamella;

milling a planar shallow lamella out of a portion of the initial deep lamella and the wafer beneath the initial deep lamella to include at least substantially an entire length of the at least one internal structure of the initial deep lamella;

lifting the planar shallow lamella out of the wafer; and

placing the planar shallow lamella on a carbon grid.

2. The method of claim 1 , further comprising:

forming a nest on the upper surface of the wafer proximate to a milling site of the initial deep lamella; and

placing the initial deep lamella within the nest on the upper surface of the wafer.

3. The method of claim 2 , wherein the nest comprises at least one of carbon, tungsten, or tetraethyl orthosilicate.

4. The method of claim 2 , wherein placing the initial deep lamella with in the nest comprises:

placing the initial deep lamella on the upper surface of the wafer proximate to but outside of the nest; and

sliding the initial deep lamella along the upper surface of the wafer and into the nest.

5. The method of claim 1 , wherein lifting the initial deep lamella out of the wafer and placing the initial deep lamella on the upper surface of the wafer are performed utilizing a lamella extraction station external to a dual beam system.

6. The method of claim 1 , wherein lifting the initial deep lamella out of the wafer comprises lifting the initial deep lamella with a probe securing the initial deep lamella with an electrostatic connection.

7. The method of claim 1 , wherein milling an initial deep lamella within the wafer comprises milling an asymmetric initial deep lamella.

8. The method of claim 1 , wherein milling a planar shallow lamella out of a portion of the initial deep lamella comprises milling the planar shallow lamella to such that a width of the planar shallow lamella extends along a longitudinal length of the initial deep lamella.

9. The method of claim 1 , further comprising imaging the planar shallow lamella on the carbon grid via a TEM or STEM imaging system to include imaging of the portion of the initial deep lamella.

10. A method of preparing a sample, the method comprising:

milling an initial deep lamella within a wafer using a focused ion beam, the initial deep lamella comprising internal structures within an upper portion of the initial deep lamella;

lifting the initial deep lamella out of the wafer;

placing the initial deep lamella on an upper surface of the wafer on a lateral side of the initial deep lamella;

milling a window within an upper portion of the initial deep lamella exposing multiple internal structures of the initial deep lamella;

based at least partially on the exposed multiple internal structures of the initial deep lamella, aligning the initial deep lamella on the upper surface of the wafer;

milling a planar shallow lamella out of a portion of the initial deep lamella and the wafer beneath the initial deep lamella to include at least substantially an entire length of at least one internal structure of the internal structures of the initial deep lamella;

lifting the planar shallow lamella out of the wafer; and

placing the planar shallow lamella on a carbon grid.

11. The method of claim 10 , further comprising depositing a material over the initial deep lamella on the upper surface of the wafer to secure the wafer prior to milling the planar shallow lamella.

12. The method of claim 11 , wherein depositing a material over the initial deep lamella comprises depositing a material as an elongated shape having a longitudinal length being at least substantially perpendicular to a top surface of the upper portion of the initial deep lamella.

13. The method of claim 11 , wherein depositing a material over the initial deep lamella comprises depositing a material as an elongated shape having a longitudinal length being at least substantially parallel to a longitudinal length of the at least one internal structure of the internal structures of the initial deep lamella.

14. The method of claim 10 , further comprising imaging the planar shallow lamella on the carbon grid via a TEM or STEM imaging system to include imaging of the portion of the initial deep lamella.

15. The method of claim 10 , further comprising depositing at least one first fiducial marker on the upper surface of the wafer proximate the initial deep lamella and at least one second fiducial marker on a lateral side surface of the initial deep lamella to identify a milling site of the planar shallow lamella and prior to milling the planar shallow lamella.

16. The method of claim 10 , wherein milling a planar shallow lamella out of a portion of the initial deep lamella comprises thinning the planar shallow lamella and cleaning the planar shallow lamella.

17. The method of claim 10 , further comprising:

forming a nest on the upper surface of the wafer proximate to a milling site of the initial deep lamella;

placing the initial deep lamella within the nest on the upper surface of the wafer; and

based at least partially on the exposed multiple internal structures of the initial deep lamella, aligning the initial deep lamella within the nest.

18. The method of claim 17 , wherein the nest comprises at least one of carbon, tungsten, or tetraethyl orthosilicate.

19. The method of claim 17 , wherein placing the initial deep lamella with in the nest comprises:

placing the initial deep lamella on the upper surface of the wafer proximate to but outside of the nest; and

sliding the initial deep lamella along the upper surface of the wafer and into the nest.

20. A method of preparing a sample, the method comprising:

milling an initial deep lamella within a wafer;

lifting the initial deep lamella out of the wafer;

placing the initial deep lamella flat on an upper surface of the wafer;

depositing an elongated shape of material over the initial deep lamella, the elongated shape of material having a longitudinal length being at least substantially perpendicular to a top surface of the initial deep lamella; and

milling a planar lamella to include at least a portion of the initial deep lamella.

21. The method of claim 20 , wherein depositing a material over the initial deep lamella comprises depositing a material as an elongated shape having a longitudinal length being at least substantially parallel to a longitudinal length of at least one internal structure of the initial deep lamella.

22. The method of claim 20 , wherein milling a planar lamella comprises milling the planar lamella centered within the elongated shape of material.