Three-dimensional semiconductor memory device
According to one embodiment, a semiconductor memory device includes a substrate; an insulating layer provided on the substrate; a conductive layer provided on the insulating layer; a stacked body provided on the conductive layer and including a plurality of electrode layers and a plurality of insulating layers respectively provided among the plurality of electrode layers; a columnar section piercing through the stacked body to reach the conductive layer and extending in a first direction in which the stacked body is stacked; and a source layer. The columnar section includes a channel body and a charge storage film provided between the channel body and the respective electrode layers. The conductive layer includes a first film having electric conductivity and in contact with the lower end portion of the channel body; and an air gap provided to be covered by the first film.
1. A semiconductor memory device comprising:
a substrate;
an insulating layer provided above the substrate;
a stacked body provided above the insulating layer and including a plurality of electrode layers separately stacked from each other in a first direction;
at least three semiconductor bodies extending in the first direction through the stacked body and including lower end portions below the stacked body;
a memory portion provided between one of the at least three semiconductor bodies and one of the plurality of electrode layers; and
a conductive layer including silicon and tungsten, provided between the insulating layer and the stacked body, and including at least three portions electrically connected with the lower end portions of the at least three semiconductor bodies respectively;
the conductive layer being not separated among the at least three portions.
2. The device according to claim 1 , wherein the conductive layer extends in a plane crossing the first direction and is not separated among the at least three portions in directions included in the plane.
3. The device according to claim 1 , further comprising:
a plurality of bit lines electrically connected to upper end portions of the at least three semiconductor bodies respectively above the stacked body.
4. The device according to claim 1 , wherein one of the plurality of electrode layers adjacent to the conductive layer in the first direction is a source side selection gate.
5. The device according to claim 1 , wherein the at least three semiconductor bodies include a first semiconductor body, a second semiconductor body, and a third semiconductor body, the first semiconductor body and the second semiconductor body being arranged in a second direction crossing the first direction, the first semiconductor body and the third semiconductor body being arranged in a third direction crossing the first direction and the second direction; and
wherein the first semiconductor body, the second semiconductor body, and the third semiconductor body are in contact with the conductive layer in common via respective contact portions.
6. The device according to claim 1 , wherein the conductive layer comprises a first conductive film including polysilicon, and a second conductive film including tungsten.
7. The device according to claim 6 , wherein the first conductive film is in contact with the lower end portions of the at least three semiconductor bodies.
8. The device according to claim 7 , wherein
one of the plurality of electrode layers adjacent to the conductive layer in the first direction is a source side selection gate, and
the second conductive film is provided below contact portions of the first conductive film with the lower end portions of the at least three semiconductor bodies and is not provided between the source side selection gate and the contact portions of the first conductive film.
9. The device according to claim 1 , further comprising:
a plurality of insulating films extending in the first direction through the stacked body to reach the conductive layer.
10. The device according to claim 9 , wherein the insulating films further extend in a second direction crossing the first direction and a bit line extending direction, the bit line being electrically connected to an upper end portion of one of the at least three semiconductor bodies above the stacked body.
11. The device according to claim 1 , further comprising:
a source layer coupled to the at least three semiconductor bodies via the conductive layer, one of the at least three semiconductor bodies being electrically connectable to the source layer via the conductive layer without via any other one of the at least three semiconductor bodies.
12. A semiconductor memory device comprising:
a substrate;
an insulating layer provided above the substrate;
a stacked body provided above the insulating layer and including a plurality of electrode layers separately stacked from each other in a first direction;
a plurality of semiconductor bodies extending in the first direction through the stacked body;
a memory portion provided between one of the semiconductor bodies and one of the plurality of electrode layers;
a conductive layer including silicon and tungsten, provided between the insulating layer and the stacked body, and including a plurality of portions electrically connected with lower end portions of the semiconductor bodies respectively below the stacked body; and
a conductive material extending in the first direction of which lower end is coupled to the conductive layer,
the semiconductor bodies being electrically connectable to the conductive material in common via the conductive layer.
13. The device according to claim 12 , wherein the semiconductor bodies include silicon and the conductive material includes tungsten.
14. The device according to claim 12 , wherein the conductive layer extends in a plane crossing the first direction and is not separated in directions included in the plane among the portions electrically connected with lower end portions of the semiconductor bodies respectively.
15. The device according to claim 12 , further comprising:
a plurality of bit lines electrically connected to upper end portions of the semiconductor bodies respectively above the stacked body.
16. The device according to claim 12 , wherein one of the plurality of electrode layers adjacent to the conductive layer in the first direction is a source side selection gate.
17. The device according to claim 12 , wherein the semiconductor bodies include a first semiconductor body, a second semiconductor body, and a third semiconductor body, the first semiconductor body and the second semiconductor body being arranged in a second direction crossing the first direction, the first semiconductor body and the third semiconductor body being arranged in a third direction crossing the first direction and the second direction; and
wherein the first semiconductor body, the second semiconductor body, and the third semiconductor body are in contact with the conductive layer in common via respective contact portions.
18. The device according to claim 12 , wherein the conductive layer comprises a first conductive film including polysilicon, and a second conductive film including tungsten.
19. The device according to claim 18 , wherein the first conductive film is in contact with the lower end portions of the semiconductor bodies.
20. The device according to claim 19 , wherein
one of the plurality of electrode layers adjacent to the conductive layer in the first direction is a source side selection gate, and
the second conductive film is provided below contact portions of the first conductive film with the lower end portions of the semiconductor bodies and is not provided between the source side selection gate and the contact portions of the first conductive film.