IP Library Granted Patent US 10,672,452
Granted Patent B2
US 10,672,452 · App. 16/138,115 · Granted Jun 2, 2020

Temperature informed memory refresh

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Quick Facts
Patent No.
US 10,672,452
App. No.
16/138,115
Granted
Jun 2, 2020
Kind
B2
Abstract

Devices and techniques for temperature informed memory refresh are described herein. Temperature data can be updated in response to a memory component write performed under an extreme temperature. Here, the write is performed on a memory component element in the memory component. The memory component element can be sorted above other memory component elements in the memory component based on the temperature data. Once sorted to the top of these memory component elements, a refresh can be performed the memory component element.

Claims (35)

1. A memory system comprising:

a memory component; and

a processing device, communicatively coupled to the memory component when in operation, the processing device performing operations comprising:

updating a write temperature counter stored in temperature data in response to a memory component write performed under an extreme temperature, the memory component write performed on a memory component element in the memory component, the extreme temperature being outside of a defined temperature window;

sorting the memory component element above other memory component elements in the memory component based on the temperature data, the sorting comprising generating, based on at least the write temperature counter, a sort-value that is compared against one or more sort-values calculated for the other memory component elements; and

performing a refresh on the memory component element in response to the sorting.

2. The memory system of claim 1 , wherein the generating the sort-value based on the at least the write temperature counter comprises combining a Low Temperature Write Counter (LWTC) and a High Temperature Write Counter (HWTC) to generate the sort-value.

3. The memory system of claim 2 , wherein the sort-value is beyond a minimum temperature-based refresh threshold.

4. The memory system of claim 3 , wherein the minimum temperature-based refresh threshold is based on a raw bit error rate (RBER) of the memory component.

5. The memory system of claim 3 , wherein the minimum temperature-based refresh threshold is a percentage of bytes in the memory component element written at the extreme temperature.

6. The memory system of claim 1 , wherein the sorting is performed in response to closure of the memory component element.

7. The memory system of claim 1 , wherein the performing the refresh comprises copying contents of the memory component element to a new memory component element.

8. The memory system of claim 7 , wherein the copying is performed in response to a non-extreme temperature of the new memory component element.

9. A method comprising:

updating a write temperature counter stored in temperature data in response to a memory component write performed, on a memory component element in a memory component, under an extreme temperature, the extreme temperature being a temperature outside a defined temperature window;

sorting the memory component element above other memory component elements in the memory component based on the temperature data, the sorting comprising generating, based on at least the write temperature counter, a sort-value that is compared against one or more sort-values calculated for the other memory component elements; and

performing a refresh on the memory component element in response to the sorting.

10. The method of claim 9 , wherein the generating the sort-value based on the at least the write temperature counter comprises combining a Low Temperature Write Counter (LWTC) and a High Temperature Write Counter (HWTC) to generate the sort-value.

11. The method of claim 10 , wherein the sort-value is beyond a minimum temperature-based refresh threshold.

12. The method of claim 11 , wherein the minimum temperature-based refresh threshold is based on a raw bit error rate (RBER) of the memory component.

13. The method of claim 11 , wherein the minimum temperature-based refresh threshold is a percentage of bytes in the memory component element written at the extreme temperature.

14. The method of claim 9 , wherein the sorting is performed in response to closure of the memory component element.

15. The method of claim 9 , wherein the performing the refresh comprises copying contents of the memory component element to a new memory component element.

16. The method of claim 15 , wherein the copying is performed in response to a non-extreme temperature of the new memory component element.

17. A non-transitory machine readable medium including instructions that, when executed by a processing device, cause the processing device to perform operations comprising:

updating a write temperature counter stored in temperature data in response to a memory component write performed under an extreme temperature, a memory component included in a memory system, the memory component write performed on a memory component element in the memory component;

sorting the memory component element above other memory component elements in the memory component based on the temperature data, the sorting comprising generating, based on at least the write temperature counter, a sort-value that is compared against one or more sort-values calculated for the other memory component elements; and

performing a refresh on the memory component element in response to the sorting.

18. The machine readable medium of claim 17 , wherein the generating the sort-value based on the at least the write temperature counter comprises combining a Low Temperature Write Counter (LWTC) and a High Temperature Write Counter (HWTC) to generate the sort-value.

19. The machine readable medium of claim 18 , wherein the sort-value is beyond a minimum temperature-based refresh threshold.

20. The machine readable medium of claim 19 , wherein the minimum temperature-based refresh threshold is based on a raw bit error rate (RBER) of the memory component.

21. The machine readable medium of claim 19 , wherein the minimum temperature-based refresh threshold is a percentage of bytes in the memory component element written at the extreme temperature.

22. The machine readable medium of claim 17 , wherein the sorting is performed in response to closure of the memory component element.

23. The machine readable medium of claim 17 , wherein the performing the refresh comprises copying contents of the memory component element to a new memory component element.

24. The machine readable medium of claim 23 , wherein the copying is performed in response to a non-extreme temperature of the new memory component element.

Assignments (5)
RELEASE OF SECURITY INTEREST Recorded Nov 15, 2019
From: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 051041/0317 →
RELEASE OF SECURITY INTEREST Recorded Oct 14, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 050724/0392 →
SUPPLEMENT NO. 12 TO PATENT SECURITY AGREEMENT Recorded Apr 19, 2019
From: MICRON TECHNOLOGY, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 048948/0677 →
SUPPLEMENT NO. 3 TO PATENT SECURITY AGREEMENT Recorded Apr 19, 2019
From: MICRON TECHNOLOGY, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 048951/0902 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 29, 2018
From: ALSASUA, GIANNI STEPHEN; SINGIDI, HARISH REDDY; MUCHHERLA, KISHORE KUMAR; RATNAM, SAMPATH; MALSHE, ASHUTOSH; RAYAPROLU, VAMSI PAVAN; PADILLA, RENATO, JR
To: MICRON TECHNOLOGY, INC.
Reel/Frame 047342/0806 →