Ceramic electronic device and manufacturing method of ceramic electronic device
A ceramic electronic device includes: a ceramic main body having at least two edge faces facing each other; and external electrodes formed on the two edge faces, wherein: the external electrodes have a structure in which a plated layer is formed on a ground layer having ceramic; a main component of the ground layer is a metal; the external electrodes have an extension region that extends to at least one of four side faces from the two edge faces of the ceramic main body; a part of the extension region corresponding to a corner portion of the ceramic main body has a first portion having a maximum spaced distance of 10 μm or less in a face direction of the ground layer; and the plated layer has an average thickness that is 30% or more with respect to the maximum spaced distance, and covers the first portion.
1. A ceramic electronic device comprising:
a ceramic main body that has at least two edge faces facing each other, has an internal electrode layer inside thereof and has a parallelepiped shape; and
external electrodes formed on the two edge faces,
wherein:
the external electrodes have a structure in which a plated layer is formed on a ground layer having ceramic;
a main component of the ground layer is a metal;
the external electrodes have an extension region that extends to at least one of four side faces from the two edge faces of the ceramic main body;
a part of the extension region corresponding to a corner portion of the ceramic main body includes a portion where the ground layer is formed, and a first portion where the ground layer is not formed;
the plated layer covers not only the ground layer but also the first portion; and
the average thickness of the plated layer is 50% or more and 100% or less with respect to a maximum distance of the first portion along a surface of the ceramic main body.
2. The ceramic electronic device as claimed in claim 1 , wherein a main component of the ground layer is Cu, Ni or an alloy of Cu and Ni.
3. The ceramic electronic device as claimed in claim 1 , wherein a main component of the plated layer is Cu, Ni or an alloy of Cu and Ni.
4. The ceramic electronic device as claimed in claim 1 , wherein:
the plated layer includes a first plated layer and a second plated layer;
the first plated layer is formed on the first portion and the ground layer;
a main component of the first plated layer is Cu;
the second plated layer is formed on the first plated layer; and
a main component of the second plated layer is Ni.
5. The ceramic electronic device as claimed in claim 1 , wherein
the first portion has a maximum distance of 10 μm or less along a surface of the ceramic main body.
6. A ceramic electronic device comprising:
a ceramic main body that has at least two edge faces facing each other, has an internal electrode layer inside thereof and has a parallelepiped shape; and
external electrodes formed on the two edge faces,
wherein:
the external electrodes have a structure in which a plated layer is formed on a ground layer having ceramic;
a main component of the ground layer is a metal;
the external electrodes have an extension region that extends to at least one of four side faces from the two edge faces of the ceramic main body;
a part of the extension region corresponding to a corner portion of the ceramic main body includes a portion where the ground layer is formed, and a first portion where the ground layer is not formed;
the plated layer covers not only the ground layer but also the first portion; and
the plated layer has an average thickness that is 30% or more with respect to a maximum distance of the first portion along a surface of the ceramic main body.
7. A manufacturing method of a ceramic electronic device comprising:
preparing a ceramic main body that has at least two edge faces facing each other, has an internal electrode layer inside thereof, has a parallelepiped shape and has a ground layer, a main component of the ground layer being a metal, the ground layer having an extension region extending from the two edge faces toward at least one of four side faces of the ceramic main body, a part of the extension region corresponding to a corner portion of the ceramic main body including a portion where the ground layer is formed, and a first portion where the ground layer is not formed; and
forming a plated layer on the ground layer and the first portion by a plating process;
wherein the average thickness of the plated layer is 50% or more and 100% or less with respect to a maximum distance of the first portion along a surface of the ceramic main body.
8. The manufacturing method of the ceramic electronic device as claimed in claim 7 , wherein
the first portion has a maximum distance of 10 μm or less along a surface of the ceramic main body.