Substrate processing apparatus having gas guide capable of suppressing gas diffusion
A technique that improves a quality of substrate processing. A substrate processing apparatus includes: a plurality of processing chambers and transfer chambers; a vacuum transfer chamber; a plurality of gate valves; a plurality of first gas supply units to supply an inert gas to a substrate; a transfer robot; and a control unit to control the plurality of first gas supply units and the transfer robot to: supply the inert gas to the substrate at a first flow rate when a distance between a gas supply port and the substrate passing through the plurality of gate valves is a first distance; and supply the inert gas to the substrate at a second flow rate greater than the first flow rate when the distance between the gas supply port and the substrate is a second distance greater than the first distance when the substrate passes through the plurality of gate valves.
1. A substrate processing apparatus comprising:
at least two chambers where a substrate is processed;
a vacuum transfer chamber wherein the substrate is transferred;
at least two gas valves comprising a first gate valve and a second gate valve; said at least two gate valves disposed between the vacuum transfer chamber and the at least two chambers,
wherein the first gate valve is disposed between the vacuum transfer chamber and a first chamber and the second gate valve is disposed between the vacuum transfer chamber and a second chamber;
a plurality of first gas supply units disposed at the vacuum transfer chamber and configured to supply an inert gas to the substrate when the substrate passes through one or more of the at least two gate valves, the plurality of first gas supply units comprising a first gas supply port, an opening of the first gas supply port extending parallel to a portion of the first gate valve extending from a sidewall to a partition wall between the first and second chamber and a second gas supply port, an opening of the second gas supply port extending parallel to a portion of the second gate valve extending from a sidewall to the partition wall between the first and second chamber;
a transfer robot disposed in the vacuum transfer chamber and configured to transfer the substrate to the at least two gate valves; and a first gas guide installed between the first gas supply port and the second gas supply port, wherein the first gas guide protrudes closer toward the transfer robot than the first gas supply port or the second gas supply port extend toward the transfer robot.
2. The substrate processing apparatus of claim 1 , further comprising a control unit configured to control the plurality of first gas supply units and the transfer robot to: supply the inert gas to the substrate at a first flow rate when a distance between a gas supply port of the plurality of first gas supply units and the substrate passing through the at least two gate valves is equal to a first distance; and supply the inert gas to the substrate at a second flow rate greater than the first flow rate when the distance between the gas supply port and the substrate passing through the at least two gate valves is equal to a second distance greater than the first distance.
3. The substrate processing apparatus of claim 1 , further comprising a control unit, wherein the transfer robot comprises end effectors configured to support at least two substrates at different heights, and the control unit is configured to control the plurality of first gas supply units to supply the inert gas to the at least two substrates supported by the end effectors at different flow rates.
4. The substrate processing apparatus of claim 1 , further comprising:
a second gas supply unit disposed between the plurality of first gas supply units and configured to supply the inert gas, wherein the at least two processing chambers are adjacent to one another; and
a control unit configured to control the plurality of first gas supply units and the second gas supply unit to: adjust a flow rate of the inert gas supplied by the second gas supply unit to be higher than a flow rate of the inert gas supplied by the plurality of first gas supply units.
5. The substrate processing apparatus of claim 2 , further comprising a second gas supply unit disposed between the plurality of first gas supply units and configured to supply the inert gas, wherein the at least two processing chambers are adjacent to one another, and the control unit is further configured to control the plurality of first gas supply units and the second gas supply unit to: adjust a flow rate of the inert gas supplied by the second gas supply unit to be higher than a flow rate of the inert gas supplied by the plurality of first gas supply units.
6. The substrate processing apparatus of claim 1 , wherein the transfer robot comprises two arms configured to transfer two substrates at different heights.
7. The substrate processing apparatus of claim 1 , wherein a lower end of a gas supply port of the plurality of first gas supply units is at a same height as an upper end of an opening of one or more of the at least two gate valves.
8. The substrate processing apparatus of claim 2 , wherein a lower end of the gas supply port is at a same height as an upper end of an opening of one or more of the at least two gate valves.
9. The substrate processing apparatus of claim 3 , wherein a lower end of a gas supply port of the plurality of first gas supply units is at a same height as an upper end of an opening of one or more of the at least two gate valves.
10. The substrate processing apparatus of claim 4 , wherein a lower end of a gas supply port of the plurality of first gas supply units is at a same height as an upper end of an opening of one or more of the at least two gate valves.
11. The substrate processing apparatus of claim 5 , wherein a lower end of a gas supply port of the plurality of first gas supply units is at a same height as an upper end of an opening of one or more of the at least two gate valves.
12. The substrate processing apparatus of claim 1 , further comprising a second gas guide disposed in the vacuum transfer chamber to face the plurality of first gas supply units, wherein the second gas guide is located at a same height as a lower end of an opening of one or more of the at least two gate valves.
13. The substrate processing apparatus of claim 2 , further comprising a second gas guide disposed in the vacuum transfer chamber to face the plurality of first gas supply units, wherein the second gas guide is located at a same height as a lower end of an opening of one or more of the at least two gate valves.
14. The substrate processing apparatus of claim 3 , further comprising a second gas guide disposed in the vacuum transfer chamber to face the plurality of first gas supply units, wherein the second gas guide is located at a same height as a lower end of an opening of one or more of the at least two gate valves.
15. The substrate processing apparatus of claim 4 , further comprising a second gas guide disposed in the vacuum transfer chamber to face the plurality of first gas supply units, wherein the second gas guide is located at a same height as a lower end of an opening of one or more of the at least two gate valves.