Semiconductor device and method for supporting ultra-thin semiconductor die
A first semiconductor substrate contains a first semiconductor material, such as silicon. A second semiconductor substrate containing a second semiconductor material, such as gallium nitride or aluminum gallium nitride, is formed on the first semiconductor substrate. The first semiconductor substrate and second semiconductor substrate are singulated to provide a semiconductor die including a portion of the second semiconductor material supported by a portion of the first semiconductor material. The semiconductor die is disposed over a die attach area of an interconnect structure. The interconnect structure has a conductive layer and optional active region. An underfill material is deposited between the semiconductor die and die attach area of the interconnect structure. The first semiconductor material is removed from the semiconductor die and the interconnect structure is singulated to separate the semiconductor die. The first semiconductor material can be removed post interconnect structure singulation.
1. A semiconductor device, comprising:
a semiconductor die comprising a first semiconductor material, a second semiconductor material formed on the first semiconductor material, and a first die attach area on the second semiconductor material;
a conductive layer comprised on a surface of the second semiconductor material extending from within the first die attach area to outside the first die attach area;
an insulating layer over the conductive layer with a first opening in the insulating layer within the first die attach area and a second opening in the insulating layer outside the first die attach area; and
an interconnect structure including a second die attach area, wherein the semiconductor die is disposed over the second die attach area of the interconnect structure;
wherein the semiconductor die is electrically connected to the conductive layer through the first opening in the insulating layer; and
wherein the second semiconductor material includes gallium nitride or aluminum gallium nitride.
2. The semiconductor device of claim 1 , wherein the first semiconductor material includes silicon.
3. The semiconductor device of claim 1 , further including an underfill material deposited between the semiconductor die and the second die attach area of the interconnect structure.
4. The semiconductor device of claim 1 , wherein the interconnect structure includes an active device.
5. The semiconductor device of claim 1 , wherein the interconnect structure includes a leadframe.
6. The semiconductor device of claim 1 , further including a protective layer formed over the semiconductor die.
7. The semiconductor device of claim 1 , wherein the interconnect structure includes a conductive layer.
8. The semiconductor device of claim 1 , further including a conductive via formed through the interconnect structure under the semiconductor die.
9. A semiconductor device, comprising:
a semiconductor die comprising a first semiconductor material, a second semiconductor material formed on the first semiconductor material, and a first die attach area on the second semiconductor material;
a conductive layer comprised on a surface of the second semiconductor material extending from within the first die attach area to outside the first die attach area;
an insulating layer over the conductive layer with a first opening in the insulating layer within the die attach area and a second opening in the insulating layer outside the die attach area; and
an interconnect structure including a second die attach area;
a clip attached to the interconnect structure; and
a bond wire attached to the interconnect structure;
wherein the semiconductor die is disposed over the second die attach area of the interconnect structure;
wherein the semiconductor die is electrically connected to the conductive layer through the first opening in the insulating layer.
10. The semiconductor device of claim 9 , wherein the first semiconductor material includes silicon.
11. The semiconductor device of claim 9 , wherein the second semiconductor material includes gallium nitride or aluminum gallium nitride.
12. The semiconductor device of claim 9 , further including an underfill material deposited between the semiconductor die and the second die attach area of the interconnect structure.
13. The semiconductor device of claim 9 , wherein the interconnect structure includes an active device.
14. The semiconductor device of claim 9 , wherein the interconnect structure includes a leadframe.
15. The semiconductor device of claim 9 , further including a protective layer formed over the semiconductor die.
16. The semiconductor device of claim 9 , wherein the interconnect structure includes a conductive layer.
17. The semiconductor device of claim 9 , further including a conductive via formed through the interconnect structure under the semiconductor die.
18. A semiconductor device, comprising:
a semiconductor die comprising a first semiconductor material, a second semiconductor material formed on the first semiconductor material, and a first die attach area on the second semiconductor material;
a conductive layer comprised on a surface of the second semiconductor material extending from within the first die attach area to outside the first die attach area;
an insulating layer over the conductive layer with a first opening in the insulating layer within the die attach area and a second opening in the insulating layer outside the first die attach area; and
an interconnect structure including a second die attach area;
an active device disposed over the interconnect structure adjacent to the semiconductor die;
wherein the semiconductor die is disposed over the second die attach area of the interconnect structure;
wherein the semiconductor die is electrically connected to the conductive layer through the first opening in the insulating layer; and
wherein the second semiconductor material includes gallium nitride or aluminum gallium nitride.