Optoelectronic device
An optoelectronic device and method of making the same. The device comprising: a substrate; a regrown cladding layer, on top of the substrate; and an optically active region, above the regrown cladding layer; wherein the regrown cladding layer has a refractive index which is less than a refractive index of the optically active region, such that an optical mode of the optoelectronic device is confined to the optically active region.
1. A method of manufacturing an optoelectronic device from a silicon-on-insulator wafer comprising a substrate, an insulating layer, and a silicon-on-insulator layer, the method comprising the steps of:
etching a cavity into the wafer, such that a depth of the cavity extends to at least an upper surface of the substrate;
growing a cladding layer onto the upper surface of the substrate;
growing an optically active material onto the cladding layer, wherein the cladding layer has a refractive index which is less than a refractive index of the optically active material; and
etching the optically active material so as to form an optically active region above the cladding layer.
2. The method of claim 1 , wherein the step of etching a cavity into the wafer comprises:
a first etching step, where the insulating layer is used as an etch-stop; and
a second etching step, where the substrate is used as an etch-stop.
3. The method of claim 1 , further including a step after etching the cavity and before growing the cladding layer of:
coating sidewalls of the cavity with an insulator.
4. The method of claim 1 , further including a step after growing the optically active material of:
planarizing the grown optically active material.
5. The method of claim 1 , further including a step, after growing the optically active material and before etching the optically active material, of:
disposing a hard mask on top of at least a part of the grown optically active material.
6. The method of claim 1 , further including a step, after etching the optically active material, of:
doping the optically active region with dopants of a first and second species, so as to provide an electro-absorption modulator.
7. The method of claim 1 , wherein the cladding layer is an epitaxially grown silicon or silicon germanium layer.
8. The method of claim 1 , further including a step, after growing the cladding layer, of growing a seed layer on top of the cladding layer.
9. The method of claim 1 , wherein the optically active material is grown through blanket deposition.
10. The method of claim 1 , wherein the optically active material is etched to provide a waveguide structure for an electro-absorption modulator or a photodiode.
11. The method of claim 1 , wherein the optically active region is formed of Si x Ge 1-x-y Sn y , where 5%≤x≤20%, 1%≤y≤10%.
12. The method of claim 1 , wherein the optically active region comprises a silicon-germanium region.
13. The method of claim 1 , wherein the optically active region is grown from SiGe or SiGeSn having a first composition, and the cladding layer is grown from SiGe or SiGeSn having a second composition different from the first composition.
14. The method of claim 1 , wherein the optically active material comprises a material selected from the group consisting of SiGeSn, GeSn, InGaNAs, and InGaNAsSb.