Asymmetric wafer bow compensation by chemical vapor deposition
Methods for reducing warpage of bowed semiconductor substrates, particularly saddle-shaped bowed semiconductor substrates, are provided herein. Methods involve depositing a bow compensation layer by plasma enhanced chemical vapor deposition on the backside of the bowed semiconductor substrate by region, such as by quadrants, to form a compressive film on a tensile substrate and a tensile film on a compressive substrate. Methods involve flowing different gases from different nozzles on a surface of a showerhead to deliver various gases by region in a one-step operation or flowing gases in a multi-step process by shielding regions of the showerhead during delivery of gases to deliver specific gases from non-shielded regions onto regions of the bowed semiconductor substrate by alternating between rotating the semiconductor substrate and flowing gases to the backside of the bowed semiconductor substrate.
1. A method comprising:
providing a bowed semiconductor substrate having a first tensile region and a first compressive region;
aligning the bowed semiconductor substrate to a backside showerhead such that the first tensile region and first compressive region are aligned to nozzles of the backside showerhead; and
mitigating bowing of the bowed semiconductor substrate by depositing a bow compensation layer on a backside of the bowed semiconductor substrate, the bow compensation layer comprising a second tensile region and a second compressive region,
wherein the nozzles of the backside showerhead deliver gases for forming the second tensile region and the second compressive region on the backside of the bowed semiconductor substrate.
2. The method of claim 1 , wherein the bow compensation layer is deposited by plasma enhanced chemical vapor deposition.
3. The method of claim 1 , wherein the bowed semiconductor substrate after mitigating bowing has a warpage between −500 μm and +500 μm.
4. The method of claim 1 , wherein the bowed semiconductor substrate is bowed up to about 100 μm as measured from a lowest point of the bowed semiconductor substrate to a highest point of the bowed semiconductor substrate prior to depositing the bow compensation layer.
5. The method of claim 1 , wherein the bowed semiconductor substrate is saddle-shaped prior to depositing the bow compensation layer.
6. The method of claim 1 , wherein the bowed semiconductor substrate has an x-axis bowing of greater than 200 μm and a y-axis bowing greater than 200 μm prior to depositing the bow compensation layer, and wherein either x-axis bowing or y-axis bowing is negative and the other is positive.
7. The method of claim 1 , wherein the second tensile region comprises silicon nitride deposited by exposing the first tensile region to a silicon-containing precursor and ammonia and igniting a single frequency radio frequency plasma.
8. The method of claim 1 , wherein the bow compensation layer is deposited in two or more separate operations.
9. The method of claim 8 , wherein the two or more separate operations comprise an operation for deposition of the second tensile region of the bow compensation layer and an operation for deposition of the second compressive region of the bow compensation layer.
10. The method of claim 1 , wherein the second compressive region comprises silicon oxide deposited by exposing the first compressive region to a silicon-containing precursor and nitrous oxide and igniting a single frequency radio frequency plasma.
11. The method of claim 1 , wherein the second compressive region comprises carbon.
12. The method of claim 1 , wherein the second compressive region comprises silicon.
13. The method of claim 1 , wherein the second compressive region is deposited on the first compressive region of the bowed semiconductor substrate by igniting a dual frequency radio frequency plasma or a low frequency radio frequency plasma.
14. The method of claim 1 , wherein deposition of the bow compensation layer comprises flowing nitrogen to a first set of two opposite quadrants while flowing a silicon-containing precursor and ammonia to the backside of the bowed semiconductor substrate to a second set of two opposite quadrants and igniting a radio frequency plasma, rotating the bowed semiconductor substrate by 90 degrees, and flowing a silicon-containing precursor and nitrous oxide to the first set of two opposite quadrants and igniting a dual frequency radio frequency plasma.
15. The method of claim 1 , wherein the bow compensation layer comprises material from the group consisting of silicon oxide, silicon nitride, carbon, silicon, and combinations thereof.
16. The method of claim 1 , wherein the bow compensation layer comprises two or more compositions.
17. A method comprising:
providing a bowed semiconductor substrate having a first tensile region and a first compressive region; and
mitigating bowing of the bowed semiconductor substrate by depositing a bow compensation layer on a backside of the bowed semiconductor substrate, the bow compensation layer comprising a second tensile region and a second compressive region,
wherein the second tensile region and second compressive region of the bow compensation layer are on alternating quadrants of the bow compensation layer.
18. The method of claim 1 , wherein flow of a silicon-containing gas to the backside of the bowed semiconductor substrate modulates stress of the bow compensation layer.
19. The method comprising:
providing a bowed semiconductor substrate having a first tensile region and a first compressive region; and
mitigating bowing of the bowed semiconductor substrate by depositing a bow compensation layer on a backside of the bowed semiconductor substrate, the bow compensation layer comprising a second tensile region and a second compressive region,
wherein depositing the bow compensation layer further comprises flowing a mixture of gases to intermediate regions between two or more adjacent quadrants.