Chain scission photoresists and methods for forming chain scission photoresists
A photoresist is disclosed. The photoresist includes a polymer with one repeating unit and an absorbing unit.
1. A photoresist, comprising:
a polymer with one repeating unit; and
an absorbing unit, wherein the absorbing unit includes an element selected from the group consisting of Bi, Co, Fe and Ge.
2. The photoresist of claim 1 , wherein portions of the polymer that are exposed to EUV become soluble to a developer.
3. The photoresist of claim 1 , wherein portions of the polymer that are not exposed to EUV are not soluble to a developer.
4. A photoresist, comprising:
a copolymer that includes two repeating units and a polymer that includes alpha-methyl styrene; and
an absorbing unit, wherein the absorbing unit includes an element selected from the group consisting of Bi, Co, Fe and Ge.
5. The photoresist of claim 4 , wherein portions of the photoresist that are exposed to EUV become soluble to a developer.
6. The photoresist of claim 4 , wherein portions of the phototresist that are not exposed to EUV are not soluble to a developer.
7. A photoresist, comprising:
a polymer with one repeating unit; and
an absorbing unit, wherein the absorbing unit includes Br.
8. The photoresist of claim 7 , wherein the Br is configured to cause increased secondary electron generation.
9. The photoresist of claim 7 , wherein portions of the polymer that are exposed to EUV become soluble to a developer.
10. The photoresist of claim 7 , wherein portions of the polymer that are not exposed to EUV are not soluble to a developer.