Light-emitting diode
A light-emitting diode includes: a semiconductor epitaxial structure including a first semiconductor layer, a second semiconductor layer disposed over the first semiconductor layer, an active layer disposed between the first and second semiconductor layers; a first electrode electrically coupled to the first semiconductor layer; and a second electrode disposed over and electrically coupled to said second semiconductor layer; wherein: the first electrode includes a plurality of first sub-electrodes; the second electrode includes a plurality of second sub-electrodes; and any two adjacent first sub-electrodes and/or second sub-electrodes have a same projection distance.
1. A light-emitting diode, comprising:
a semiconductor epitaxial structure including a first semiconductor layer, a second semiconductor layer disposed over the first semiconductor layer, an active layer disposed between the first and second semiconductor layers;
a first electrode electrically coupled to the first semiconductor layer; and
a second electrode disposed over and electrically coupled to said second semiconductor layer;
wherein:
the first electrode includes a plurality of first sub-electrodes;
the second electrode includes a plurality of second sub-electrodes; and
any two adjacent first sub-electrodes and/or second sub-electrodes have a same projection distance;
wherein:
the first electrode and/or second electrode include(s) six sub-electrodes forming a minimal unit of closely-packed hexagonal structure;
the six sub-electrodes are composed of one or more of the first sub-electrodes, the second sub-electrodes, or a combination of the first sub-electrodes and the second sub-electrodes.
2. The light-emitting diode of claim 1 , wherein the closely-packed hexagonal structure includes one first sub-electrode or one second sub-electrode as a center.
3. The light-emitting diode of claim 1 , wherein the closely-packed hexagonal structure includes six first sub-electrodes, or six second sub-electrodes, or two first sub-electrodes and four second sub-electrodes, or four first sub-electrodes and two second sub-electrodes.
4. The light-emitting diode of claim 1 , wherein the closely-packed hexagonal structure includes three first sub-electrodes and three second sub-electrodes.
5. The light-emitting diode of claim 4 , wherein the first sub-electrodes and second sub-electrodes are arranged in a staggered manner.
6. The light-emitting diode of claim 5 , wherein:
the three first sub-electrodes constitute one minimal unit of equilateral triangle; and
the three second sub-electrodes constitute one minimal unit of equilateral triangle.
7. The light-emitting diode of claim 1 , wherein a number of said first sub-electrodes is smaller than or equal to a number of second sub-electrodes.
8. The light-emitting diode of claim 1 , wherein a ratio of the first sub-electrodes to the second sub-electrodes ranges from 0.3-0.9.
9. The light-emitting diode of claim 1 , wherein:
a distance between two adjacent first sub-electrodes is 10-150 μm; and
a distance between two adjacent second sub-electrodes is 10-150 μm.
10. A light-emitting diode, comprising:
a semiconductor epitaxial structure including a first semiconductor layer, a second semiconductor layer disposed over the first semiconductor layer, an active layer between the first and second semiconductor layers;
a first electrode electrically coupled to the first semiconductor layer and including a plurality of first sub-electrodes;
a second electrode disposed over and electrically coupled to the second semiconductor layer, and including a plurality of second sub-electrodes;
a third electrode coupled to the plurality of first sub-electrodes and including a plurality of third sub-electrodes;
a fourth electrode coupled to the plurality of second sub-electrodes and including a plurality of fourth sub-electrodes;
wherein any two adjacent first sub-electrodes and/or second sub-electrodes have a same projection distance.
11. The light-emitting diode of claim 10 , wherein a ratio between the third sub-electrodes to the fourth sub-electrodes is greater than or equal to 2:1.
12. The light-emitting diode of claim 10 , wherein the third sub-electrodes have straight or curved strip pattern.
13. The light-emitting diode of claim 12 , wherein the curved strip pattern includes an S-shaped pattern or a Z-shaped pattern.
14. The light-emitting diode of claim 10 , wherein the third sub-electrodes have a same or different shapes.
15. The light-emitting diode of claim 10 , wherein adjacent third sub-electrodes have one or more second sub-electrodes placed therebetween.
16. The light-emitting diode of claim 15 , wherein the one or more second sub-electrodes placed between have the same or similar patterns with neighboring third sub-electrodes.
17. The light-emitting diode of claim 10 , wherein the fourth sub-electrodes have a hollow pattern.
18. The light-emitting diode of claim 10 , further comprising a fifth electrode and a sixth electrode, wherein the fifth electrode is coupled to the several third sub-electrodes, and the sixth electrode is coupled to the plurality of fourth sub-electrodes.
19. The light-emitting diode of claim 18 , wherein the fifth electrode and sixth electrode have the same shape and are arranged symmetrically.