Semiconductor device and method of forming a curved image sensor
A semiconductor device has a semiconductor die containing a base material having a first surface and a second surface with an image sensor area. A masking layer with varying width openings is disposed over the first surface of the base material. The openings in the masking layer are larger in a center region of the semiconductor die and smaller toward edges of the semiconductor die. A portion of the first surface of the base material is removed by plasma etching to form a first curved surface. A metal layer is formed over the first curved surface of the base material. The semiconductor die is positioned over a substrate with the first curved surface oriented toward the substrate. Pressure and temperature is applied to assert movement of the base material to change orientation of the second surface with the image sensor area into a second curved surface.
1. A method of making a semiconductor device, comprising:
providing a semiconductor die including a base semiconductor material comprising a first surface and a second surface opposite the first surface, wherein the second surface includes an image sensor area;
applying a masking layer over the first surface of the base semiconductor material, wherein the masking layer includes openings of varying width;
removing a portion of the first surface of the base semiconductor material to form a first curved surface; and
moving the base semiconductor material to change orientation of the second surface with the image sensor area into a second curved surface.
2. The method of claim 1 , further including utilizing plasma etching to remove the portion of the first surface of the base semiconductor material.
3. The method of claim 1 , further including disposing the semiconductor die on a substrate with the first curved surface oriented toward the substrate.
4. The method of claim 1 , further including:
providing a substrate;
disposing the semiconductor die over the substrate with the first curved surface oriented toward the substrate; and
applying pressure and temperature to assert movement of the base semiconductor material to change orientation of the second surface with the image sensor area into the second curved surface.
5. The method of claim 4 , wherein the substrate includes a recessed surface.
6. The method of claim 1 , further including forming a metal layer over the first curved surface of the base semiconductor material.
7. A method of making a semiconductor device, comprising:
providing a semiconductor die including a base substrate material comprising a first surface and a second surface opposite the first surface;
applying a masking layer over the first surface of the base substrate material, wherein the masking layer includes openings of varying width;
removing a portion of the first surface of the base substrate material to form a first curved surface; and
moving the base substrate material to change orientation of the second surface into a second curved surface.
8. The method of claim 7 , wherein the second surface of the base substrate material includes an image sensor area.
9. The method of claim 7 , further including utilizing plasma etching to remove the portion of the first surface of the base substrate material.
10. The method of claim 7 , wherein the masking layer is formed through one of a photoresist layer or a patterned oxide layer.
11. The method of claim 10 , wherein the openings of the masking layer are larger in a center region of the semiconductor die and smaller toward edges of the semiconductor die.
12. The method of claim 7 , further including:
providing a substrate;
disposing the semiconductor die over the substrate with the first curved surface oriented toward the substrate; and
applying pressure and temperature to assert movement of the base substrate material to change orientation of the second surface into the second curved surface.
13. The method of claim 12 , wherein the substrate includes a recessed surface.
14. A method of making a semiconductor device, comprising:
providing a semiconductor die including a base substrate material;
applying a masking layer over the base substrate material, wherein the masking layer includes openings of varying width;
removing a portion of the base substrate material to form a first curved surface; and
moving the base substrate material to change orientation into a second curved surface.
15. The method of claim 14 , wherein the base substrate material includes an image sensor area.
16. The method of claim 14 , further including utilizing plasma etching to remove the portion of the base substrate material.
17. The method of claim 14 , wherein the masking layer is formed through one of a photoresist layer or a patterned oxide layer.
18. The method of claim 14 , wherein the openings of the masking layer are larger in a center region of the semiconductor die and smaller toward edges of the semiconductor die.
19. The method of claim 14 , further including:
providing a substrate;
disposing the semiconductor die over the substrate with the first curved surface oriented toward the substrate; and
applying pressure and temperature to assert movement of the base substrate material to change orientation into the second curved surface.
20. The method of claim 19 , wherein the substrate includes a recessed surface.