Semiconductor device and method for fabricating the same

1. A semiconductor device, comprising:

a semiconductor substrate;

a plurality of semiconductor fins; and

a first fin bump between the plurality of semiconductor fins, wherein the first fin bump comprises a first sidewall spacer, and wherein the first sidewall spacer comprises a solid-state dopant source layer and an insulating buffer layer.

2. The semiconductor device according to claim 1 , wherein the solid-state dopant source layer comprises a borosilicate glass (BSG) layer.

3. The semiconductor device according to claim 1 , wherein the solid-state dopant source layer comprises a phosphosilicate glass (PSG) layer or an arsenic silicate glass (AsSG) layer.

4. The semiconductor device according to claim 1 , wherein the insulating buffer layer comprises silicon nitride.

5. The semiconductor device according to claim 1 , wherein the insulating buffer layer is disposed on the solid-state dopant source layer.

6. The semiconductor device according to claim 1 further comprises a recessed region in the semiconductor substrate and next to the first fin bump.

7. The semiconductor device according to claim 6 , wherein the recessed region is filled with a dielectric layer.

8. The semiconductor device according to claim 7 further comprises a gate segment on the dielectric layer and a gate edge of the gate segment that is partially overlapped with the first fin bump.

9. The semiconductor device according to claim 1 , wherein the first sidewall spacer has a top surface that is higher than that of the first fin bump.

10. The semiconductor device according to claim 1 further comprises a second fin bump, wherein the second fin bump comprises a second sidewall spacer that has different structure from the first sidewall spacer.