Semiconductor device and method of forming WLCSP
A semiconductor substrate contains a plurality of semiconductor die with a saw street between the semiconductor die. A plurality of bumps is formed over a first surface of the semiconductor die. An insulating layer is formed over the first surface of the semiconductor die between the bumps. A portion of a second surface of the semiconductor die is removed and a conductive layer is formed over the remaining second surface. The semiconductor substrate is disposed on a dicing tape, the semiconductor substrate is singulated through the saw street while maintaining position of the semiconductor die, and the dicing tape is expanded to impart movement of the semiconductor die and increase a space between the semiconductor die. An encapsulant is deposited over the semiconductor die and into the space between the semiconductor die. A channel is formed through the encapsulant between the semiconductor die to separate the semiconductor die.
1. A method of making a semiconductor device, comprising:
providing a semiconductor substrate including a plurality of semiconductor die with a saw street between the semiconductor die;
after providing the semiconductor substrate, forming a plurality of bumps over a first surface of the semiconductor die;
after forming the plurality of bumps, forming an insulating layer over the first surface of the semiconductor die between the bumps;
after forming the insulating layer, singulating the semiconductor substrate through removing substrate material through an entire thickness of the semiconductor substrate in the saw street;
after singulating the semiconductor substrate, moving the semiconductor die to increase a space between the semiconductor die;
after moving the semiconductor die, depositing an encapsulant over the semiconductor die and into the space between the semiconductor die; and
after depositing the encapsulant, forming a channel through the encapsulant between the semiconductor die to separate the semiconductor die.
2. The method of claim 1 , wherein removing the substrate material further comprises removing the substrate material using a saw blade.
3. The method of claim 1 , further including depositing the encapsulant over a portion of the first surface of the semiconductor die.
4. The method of claim 1 , further including removing a portion of a second surface of the semiconductor die opposite the first surface of the semiconductor die.
5. The method of claim 1 , further including forming a conductive layer over a second surface of the semiconductor die opposite the first surface of the semiconductor die.
6. The method of claim 1 , further including:
disposing the semiconductor substrate over a dicing tape; and
expanding the dicing tape to impart movement of the semiconductor die to increase the space between the semiconductor die.
7. The method of claim 1 , wherein a first distance between a first semiconductor die and an adjacent second semiconductor die on the semiconductor substrate is greater than a second distance between the first semiconductor die and an adjacent third semiconductor die on the semiconductor substrate.
8. A method of making a semiconductor device, comprising:
providing a semiconductor substrate including a plurality of semiconductor die;
after providing the semiconductor substrate, forming a plurality of bumps over a first surface of the semiconductor die;
after forming the plurality of bumps, forming an insulating layer over the first surface of the semiconductor die between the bumps;
after forming the insulating layer, singulating the semiconductor substrate between the semiconductor die, wherein there is no backgrinding of the semiconductor substrate after singulating the semiconductor substrate;
after singulating the semiconductor substrate, expanding a space between the semiconductor die;
after expanding the space, depositing an encapsulant over the semiconductor die and into the space between the semiconductor die; and
after depositing the encapsulant, forming a channel through the encapsulant between the semiconductor die to separate the semiconductor die.
9. The method of claim 8 , further including forming the insulating layer over the first surface of the semiconductor die and around the bumps.
10. The method of claim 8 , further including depositing the encapsulant over a portion of the first surface of the second semiconductor die.
11. The method of claim 8 , further including removing a portion of a second surface of the semiconductor die opposite the first surface of the semiconductor die.
12. The method of claim 8 , further including forming a conductive layer over a second surface of the semiconductor die opposite the first surface of the semiconductor die.
13. The method of claim 8 , further including:
disposing the semiconductor substrate over a dicing tape; and
expanding the dicing tape to expand the space between the semiconductor die.
14. The method of claim 8 , wherein a first distance between a first semiconductor die and an adjacent second semiconductor die on the semiconductor substrate is greater than a second distance between the first semiconductor die and an adjacent third semiconductor die on the semiconductor substrate.
15. A method of making a semiconductor device, comprising:
forming a plurality of semiconductor die on a first surface of a semiconductor substrate;
after forming the plurality of semiconductor die, forming a plurality of bumps over a first surface of the semiconductor substrate;
after forming the plurality of bumps, forming an insulating layer between the plurality of bumps;
after forming the insulating layer, applying a dicing tape to a second surface of the plurality of semiconductor die opposite the first surface;
after applying the dicing tape, forming a first channel entirely through the semiconductor substrate between the semiconductor die;
after forming the first channel, widening the first channel through expanding the dicing tape;
after widening the first channel, filling the first channel with an encapsulant; and
after filling the first channel, forming a second channel through the encapsulant to separate the plurality of semiconductor die.
16. The method of claim 15 , wherein forming the first channel further comprising using a saw blade.
17. The method of claim 15 , wherein the second surface of the semiconductor substrate is not background after forming the first channel through the semiconductor substrate.
18. The method of claim 15 , further comprising forming a conductive layer over the second surface of the semiconductor substrate.
19. The method of claim 15 , wherein the first channel is widened to a width of at least 75 micrometers.
20. The method of claim 15 , wherein the plurality of semiconductor die includes a discrete semiconductor device.