Method of forming film
In a first aspect of a present inventive subject matter, a method of forming a film includes turning a raw material containing at least a first chemical element and a second chemical element into atomized droplets; carrying the atomized droplets containing at least the first chemical element and the second chemical element by use of a carrier gas onto an object; and causing a reaction of the atomized droplets to form a film containing at least the first chemical element and the second chemical element on the object. The first chemical element is selected from among elements of Group 14 and elements of Group 15 of the periodic table. The second chemical element is selected from among d-block elements, elements of Group 13 and elements of Group 14 of the periodic table and different from the first chemical element.
1. A method of forming a phosphide film or a nitride film, comprising:
turning a raw material solution comprising at least a first chemical element, a second chemical element, and a solvent into atomized droplets, wherein the first chemical element is phosphorus or nitrogen, and the second chemical element is selected from the group consisting of d-block elements, elements of Group 13 of the periodic table and elements of Group 14 of the periodic table;
supplying an inert gas to the atomized droplets that are floating and comprise at least the first chemical element and the second chemical element to carry the atomized droplets by the inert gas onto an object in a film-formation chamber; and
causing a reaction of the atomized droplets under the atmosphere of the inert gas in the film-formation chamber to form a phosphide film or a nitride film comprising at least the first chemical element and the second chemical element on the object.
2. The method of claim 1 , wherein
the reaction of the atomized droplets is a thermal reaction of the atomized droplets under the inert gas atmosphere.
3. The method of claim 2 , wherein
the thermal reaction is conducted at a temperature of 500° C. or higher.
4. The method of claim 2 , wherein
the thermal reaction is conducted under the inert gas atmosphere without influence of oxygen.
5. The method of claim 1 , wherein
the first chemical element and the second chemical element in the raw material solution are in a form of a compound.
6. The method of claim 1 , wherein
the second chemical element is a d-block element that is a Period 4 element of the periodic table.
7. The method of claim 1 , wherein
the second chemical element is selected from Group 14 of the periodic table.
8. The method of claim 1 , wherein
the atomic ratio of the first chemical element and the second chemical element in the raw material solution is in a range of 1:2 to 10:1.
9. The method of claim 1 , wherein
the film is a non-oxide film.
10. The method of claim 1 , wherein
the film is formed under atmospheric pressure.
11. The method of claim 1 , further comprising:
filling the film-formation chamber with the inert gas.
12. A method of forming a phosphide film or a nitride film, comprising:
turning a raw material solution comprising at least a first chemical element, a second chemical element, and a solvent into atomized droplets, wherein the first chemical element is phosphorus or nitrogen, and the second chemical element is selected from the group consisting of d-block elements, elements of Group 13 of the periodic table and elements of Group 14 of the periodic table;
supplying a reducing gas to the atomized droplets that are floating and comprise at least the first chemical element and the second chemical element to carry the atomized droplets by the reducing gas onto an object in a film-formation chamber; and
causing a reaction of the atomized droplets under the atmosphere of the reducing gas in the film-formation chamber to form a phosphide film or a nitride film comprising at least the first chemical element and the second chemical element on the object.
13. The method of claim 12 , wherein
the reaction of the atomized droplets is a thermal reaction of the atomized droplets under the reducing gas atmosphere.
14. The method of claim 13 , wherein
the thermal reaction is conducted at a temperature of 500° C. or higher.
15. A method of forming a nitride film, comprising:
turning a raw material solution comprising at least a first chemical element, a second chemical element, and a solvent into atomized droplets, wherein the first chemical element is nitrogen, and the second chemical element is selected from the group consisting of d-block elements, elements of Group 13 of the periodic table and elements of Group 14 of the periodic table;
filling a film-formation chamber with an inert gas;
supplying the inert gas to the atomized droplets that are floating and comprise at least the first chemical element and the second chemical element to carry the atomized droplets by the inert gas onto an object in the film-formation chamber; and
causing a reaction of the atomized droplets under the atmosphere of the inert gas in the film-formation chamber to form a nitride film comprising at least nitrogen and the second chemical element on the object.
16. The method of claim 15 , wherein
the reaction is a thermal reaction conducted under the inert gas atmosphere without influence of oxygen.
17. The method of claim 15 , wherein
the film is formed under atmospheric pressure.
18. A method of forming a nitride film comprising:
turning a raw material solution comprising at least a first chemical element, a second chemical element, and a solvent into atomized droplets, wherein the first chemical element is nitrogen, and the second chemical element is selected from the group consisting of d-block elements, elements of Group 13 of the periodic table and elements of Group 14 of the periodic table;
supplying a reducing gas to the atomized droplets that are floating and comprise at least nitrogen and the second chemical element to carry the atomized droplets by the reducing gas onto an object in the film-formation chamber; and
causing a reaction of the atomized droplets under the atmosphere of the reducing gas in the film-formation chamber to form a film comprising at least nitrogen and the second chemical element on the object under atmospheric pressure.
19. The method of claim 18 , wherein
the reaction is a thermal reaction conducted under the reducing gas atmosphere without influence of oxygen.
20. The method of claim 18 , further comprising:
filling a film-formation chamber with the reducing gas.