Semiconductor device
A semiconductor device is provided. The semiconductor device includes an insulating structure and a dielectric structure. The insulating structure is disposed on a substrate and has a plurality of openings. The dielectric structure is disposed on the insulating structure and extending into the plurality of openings.
1. A semiconductor device, comprising:
a substrate, having a dense area and a sparse area;
a first insulating layer, disposed on the substrate in the dense area;
a semiconductor layer, disposed on the first insulating layer in the dense area, wherein the substrate, the first insulating layer and the semiconductor layer in the dense area constitute a semiconductor-on-insulator (SOI) substrate;
an insulating structure, disposed on the substrate in the sparse area and having a plurality of openings, wherein a top surface of the insulating structure is coplanar with a top surface of the semiconductor layer;
a dielectric structure, disposed on the insulating structure and extending into the plurality of openings; and
an etching stop layer, interposed between the insulating structure and the dielectric structure,
wherein the first insulating layer is further disposed on the substrate in the sparse area, and the insulating structure comprises:
the first insulating layer in the sparse area; and
a second insulating layer, having the plurality of openings and disposed between the first insulating layer and the etching stop layer.
2. The semiconductor device of claim 1 , wherein the etching stop layer further extends to cover sidewalls and bottoms of the plurality of openings.
3. The semiconductor device of claim 1 , wherein the dielectric structure comprises:
a first patterned dielectric layer, disposed on the etching stop layer; and
a second dielectric layer, disposed on the first patterned dielectric layer and extending into the plurality of openings.
4. The semiconductor device of claim 1 , wherein the dielectric structure in each of the plurality of openings has an inverted-Y shaped interface.
5. The semiconductor device of claim 1 , wherein the dielectric structure in the plurality of openings has a plurality of air gaps.
6. The semiconductor device of claim 1 , further comprising an element disposed on the dielectric structure.
7. The semiconductor device of claim 6 , wherein the element comprises an inductor, a ground-signal-ground (GSG) pad or a combination thereof.
8. The semiconductor device of claim 1 , wherein the semiconductor layer is not disposed in the sparse area.