Light-emitting diode device and manufacturing method thereof

1. A light-emitting diode device, comprising:

a frame body comprising an upper surface, a bottom, a recess located on an opposite side to the bottom, and a first side surface and a second side surface opposite to each other;

a first conductive extension structure and a second conductive extension structure located in the frame body, wherein the first conductive extension structure and the second conductive extension structure extend from the first side surface of the frame body to the second side surface of the frame body, and the frame body encapsulates a left side surface, a right side surface, a top surface, and a bottom surface of each of the first conductive extension structure and the second conductive extension structure; and

a light-emitting diode chip disposed in the recess, wherein the light-emitting diode chip includes a first conductive pad and a second conductive pad in contact with the top surfaces of the first conductive extension structure and the second conductive extension structure, respectively.

2. The light-emitting diode device of claim 1 , further comprising a wavelength conversion layer disposed above the light-emitting diode chip in the recess.

3. The light-emitting diode device of claim 2 , wherein the wavelength conversion layer has a light output surface coplanar with the upper surface.

4. The light-emitting diode device of claim 1 , further comprising a wavelength conversion layer, wherein the wavelength conversion layer covers the light-emitting diode chip and the upper surface.

5. The light-emitting diode device of claim 1 , further comprising a third side surface and a fourth side surface opposite to each other, wherein the first conductive extension structure and the second conductive extension structure extend to the third side surface and the fourth side surface, respectively.

6. The light-emitting diode device of claim 5 , wherein the left side surface of the first conductive extension structure extends toward the third side surface and/or the right side surface of the second conductive extension structure extends toward the fourth side surface.

7. The light-emitting diode device of claim 5 , wherein the left side surface of the first conductive extension structure extends beyond the third side surface and/or the right side surface of the second conductive extension structure extends beyond the fourth side surface.

8. The light-emitting diode device of claim 1 , wherein the frame body comprises TiO 2 .

9. The light-emitting diode device of claim 1 , wherein the first conductive extension structure and the second conductive extension structure have a same material.

10. The light-emitting diode device of claim 2 , wherein the wavelength conversion layer includes at least one fluorescent material.

11. The light-emitting diode device of claim 4 , wherein the wavelength conversion layer includes at least one fluorescent material.

12. A method of manufacturing a light-emitting diode device, comprising:

providing or receiving a first light-emitting diode chip and a second light-emitting diode chip, wherein each of the first and second light-emitting diode chips includes a first conductive pad and a second conductive pad;

disposing the first light-emitting diode chip and the second light-emitting diode chip on a carrier, wherein the first conductive pad and the second conductive pad are adjacent to the carrier, and a first gap exists between the first light-emitting diode chip and the second light-emitting diode chip;

forming a first sealant on the carrier, wherein the first sealant fills the first gap;

removing the carrier to form an intermediate structure comprising the first light-emitting diode chip, the second light-emitting diode chip, and the first sealant;

forming a first conductive extension layer and a second conductive extension layer on the intermediate structure, wherein the first conductive extension layer extends from the first conductive pad of the first light-emitting diode chip to the first conductive pad of the second light-emitting diode chip via the first sealant, and the second conductive extension layer extends from the second conductive pad of the first light-emitting diode chip to the second conductive pad of the second light-emitting diode chip via the first sealant;

forming a second sealant covering the intermediate structure, the first conductive extension layer and the second conductive extension layer; and

dicing the first sealant, the second sealant, the first conductive extension layer, and the second conductive extension layer along a first dicing region between the first light-emitting diode chip and the second light-emitting diode chip, thereby forming a first dicing surface, wherein the first dicing surface exposes a cross-section of the first conductive extension layer and a cross-section of the second conductive extension layer.

13. The method of claim 12 , wherein forming the first sealant on the carrier further comprises:

forming a first sealant material covering the first light-emitting diode chip and the second light-emitting diode chip; and

polishing the first sealant material to expose the first light-emitting diode chip and the second light-emitting diode chip.

14. The method of claim 12 , prior to removing the carrier, further comprising:

forming a first fluorescent layer and a second fluorescent layer above the first light-emitting diode chip and the second light-emitting diode chip, wherein a spacing exists between the first fluorescent layer and the second fluorescent layer; and

forming a third sealant in the spacing.

15. The method of claim 12 , wherein the step of providing or receiving the first light-emitting diode chip and the second light-emitting diode chip further comprises providing a third light-emitting diode chip, wherein the third light-emitting diode chip includes a third conductive pad; and

the step of disposing the first light-emitting diode chip and the second light-emitting diode chip on the carrier further comprises disposing the third light-emitting diode chip on the carrier, wherein the third light-emitting diode chip is disposed on one side of the first light-emitting diode chip, a second gap exists between the third light-emitting diode chip and the first light-emitting diode chip, and a longitudinal direction of the second gap is perpendicular to a longitudinal direction of the first gap.

16. The method of claim 15 , wherein in the step of forming the first sealant on the carrier, the first sealant fills the second gap;

wherein in the step of removing the carrier to form the intermediate structure, the intermediate structure further comprises the third light-emitting diode chip.

17. The method of claim 16 , wherein, in the step of forming the first conductive extension layer and the second conductive extension layer, the second conductive extension layer extends along the longitudinal direction of the first gap toward the third conductive pad of the third light-emitting diode chip, but not covering the third conductive pad.

18. The method of claim 16 , wherein, in the step of forming the first conductive extension layer and the second conductive extension layer, the second conductive extension layer extends to the third conductive pad of the third light-emitting diode chip.

19. The method of claim 18 , further comprising dicing the first sealant, the second sealant, the first conductive extension layer, and the second conductive extension layer along a second dicing region between the first light-emitting diode chip and the third light-emitting diode chip, thereby forming a second dicing surface, wherein the second dicing surface exposes another cross-section of the second conductive extension layer.