OPTOELECTRONIC SEMICONDUCTOR CHIP
An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a semiconductor body of semiconductor material, a p-contact layer and an n-contact layer. The semiconductor body includes an active layer intended for generating radiation. The semiconductor body includes a p-side and an n-side, between which the active layer is arranged. The p-contact layer is intended for electrical contacting the p-side. The n-contact layer is intended for electrical contacting the n-side 1 b . The n-contact layer contains a TCO layer and a mirror layer, the TCO-layer being arranged between the n-side of the semiconductor body and the mirror layer.
1 . A method of producing an optoelectronic semiconductor chip, comprising:
providing a semiconductor body of semiconductor material in an epitaxial layer, wherein the semiconductor body comprises an active layer, a p-side and an n-side, wherein the active layer is arranged between the p-side and the n-side;
providing a p-contact layer that is capable of electrically contacting the p-side of the semiconductor body; and
providing an n-contact layer that is capable of electrically contacting the n-side of the semiconductor body, wherein the n-contact layer comprises a TCO-layer and a mirror layer, and the TCO-layer is arranged between the n-side of the semiconductor body and the mirror layer.
2 . The method according to claim 1 , wherein the n-contact layer passes to the n-side by means of a hole through the p-contact layer and through the p-side of the semiconductor body.
3 . The method according to claim 2 , wherein the TCO-layer is arranged directly on the hole.
4 . The method according to claim 3 , wherein the TCO-layer closes off the hole.
5 . The method according to claim 2 , wherein the hole is lined with an electrically insulating layer, the electrically insulating layer directly adjoining the TCO-layer.
6 . The method according to claim 1 , wherein the TCO-layer is applied to form an ohmic contact on the n-side.
7 . The method according to claim 1 , wherein the mirror layer comprises silver.
8 . The method according to claim 1 , wherein the p-contact layer and the n-contact layer are arranged on the same side of the semiconductor body.
9 . The method according to claim 8 , wherein the p-contact layer directly adjoins the p-side of the semiconductor body;
wherein the n-contact layer is arranged on a side of the p-contact layer that is remote from the semiconductor body; and
wherein the semiconductor body further comprises an electrically insulating layer that is arranged between the p-contact layer and the n-contact layer.
10 . The method according to claim 1 , wherein the TCO-layer comprises ZnO or ITO.
11 . The method according to claim 1 , wherein the TCO-layer has a thickness of greater than 0.5 nm.
12 . The method according to claim 1 , wherein the TCO-layer has a thickness in a range of between 15 nm and 25 nm inclusive.
13 . The method according to claim 1 , wherein the semiconductor body has oblique side faces.
14 . The method according to claim 1 , wherein the semiconductor body is based on GaN.
15 . The method according to claim 1 , wherein providing the semiconductor body comprises:
growing, epitaxially, the semiconductor body on a growth substrate; and
detaching the semiconductor body from the growth substrate.
16 . An optoelectronic semiconductor chip, comprising:
a semiconductor body;
a p-contact layer; and
an n-contact layer;
wherein the semiconductor body comprises an active layer, a p-side, and an n-side, wherein the active layer is arranged between the p-side and the n-side;
wherein the n-contact layer comprises a TCO-layer and a mirror layer;
wherein the TCO-layer is arranged between the n-side of the semiconductor body and the mirror layer; and
wherein the mirror layer is not in direct contact with the semiconductor body.
17 . The optoelectronic semiconductor chip according to claim 16 , wherein the TCO-layer is in direct contact with the semiconductor body and the mirror layer.
18 . The optoelectronic semiconductor chip according to claim 16 , wherein the TCO-layer comprises ZnO or ITO.
19 . The optoelectronic semiconductor chip according to claim 16 , wherein the TCO-layer has a thickness of greater than 0.5 nm.
20 . The optoelectronic semiconductor chip according to claim 16 , wherein the TCO-layer has a thickness in a range of between 15 nm and 25 nm inclusive.