Through-holes of a semiconductor chip
One semiconductor chip includes a substrate having insulation properties, a plurality of bump electrodes provided on one surface of the substrate, a plurality of recesses provided in the other surface of the substrate, and a solder layer disposed within the recesses. The recesses are formed such that the area of the opening decreases from the other surface side toward the one surface side of the substrate.
1. A semiconductor chip comprising:
a semiconductor substrate;
a plurality of bump electrodes disposed on a first face of the semiconductor substrate; and
through-holes passing through the semiconductor substrate from the first face of the semiconductor substrate towards a second face of the semiconductor substrate, wherein the through-holes comprise:
a first aperture extending from the second face of the semiconductor substrate into an interior of the semiconductor substrate; and
a second aperture provided between the first face of the semiconductor substrate and the first aperture, wherein a first aperture area of the first aperture decreases with a first reduction ratio from the second face of the semiconductor substrate towards the first face of the semiconductor substrate, a second aperture area of the second aperture decreases with a second reduction ratio that is smaller than the first reduction ratio from the second face of the semiconductor substrate towards the first face of the semiconductor substrate, and the first and second apertures are formed with a conical shape.
2. The semiconductor chip of claim 1 , further comprising a solder layer arranged within the first aperture.
3. The semiconductor chip of claim 2 , wherein the solder layer completely fills the first aperture.
4. The semiconductor chip of claim 3 , wherein the solder layer comprises a first material having a lower melting temperature than a second material of the bump electrodes.
5. The semiconductor chip of claim 3 , wherein the solder layer comprises tin, silver, or a combination thereof.
6. The semiconductor chip of claim 1 , further comprising a conductive layer arranged within the second aperture.
7. The semiconductor chip of claim 6 , wherein the conductive layer completely fills the second aperture.
8. The semiconductor chip of claim 7 , wherein the conductive layer is made of copper.
9. The semiconductor chip of claim 1 , further comprising a circuit forming layer disposed between the second aperture and the plurality of bump electrodes.
10. The semiconductor chip of claim 1 , wherein the plurality of bump electrodes are made of copper.
11. A method comprising:
forming a plurality of bump electrodes on a first face of a semiconductor substrate of a semiconductor chip; and
forming through-holes passing through the semiconductor substrate from the first face of the semiconductor substrate towards a second face of the semiconductor substrate, wherein the through-holes comprise:
a first aperture extending from the second face of the semiconductor substrate into an interior of the semiconductor substrate; and
a second aperture provided between the first face of the semiconductor substrate and the first aperture, wherein a first aperture area of the first aperture decreases with a first reduction ratio from the second face of the semiconductor substrate towards the first face of the semiconductor substrate, a second aperture area of the second aperture decreases with a second reduction ratio that is smaller than the first reduction ratio from the second face of the semiconductor substrate towards the first face of the semiconductor substrate, and the first and second apertures are formed with a conical shape.
12. The method of claim 11 , further comprising forming a solder layer within the first aperture.
13. The method of claim 12 , wherein the solder layer completely fills the first aperture.
14. The method of claim 13 , wherein the solder layer comprises a first material having a lower melting temperature than a second material of the bump electrodes.
15. The method of claim 13 , wherein the solder layer comprises tin, silver, or a combination thereof.
16. The method of claim 11 , further comprising forming a conductive layer within the second aperture.
17. The method of claim 16 , wherein the conductive layer completely fills the second aperture.
18. The method of claim 17 , wherein the conductive layer is made of copper.
19. The method of claim 11 , further comprising forming a circuit forming layer between the second aperture and the plurality of bump electrodes.
20. The method of claim 11 , wherein the plurality of bump electrodes are made of copper.