SEMICONDUCTOR DEVICE
A semiconductor device is provided that is excellent in semiconductor properties and Schottky characteristics. A semiconductor device includes: a semiconductor layer containing a crystalline oxide semiconductor with a corundum structure as a major component; and a Schottky electrode on the semiconductor layer, wherein the Schottky electrode is formed by containing a metal of Groups 4-9 of the periodic table, thereby manufacturing a semiconductor device excellent in semiconductor properties and Schottky characteristics without impairing the semiconductor properties to use the semiconductor device thus obtained for a power device and the like.
1 - 15 . (canceled)
16 . A semiconductor device comprising:
a semiconductor layer comprising a crystalline oxide semiconductor with a corundum structure as a major component; and
a Schottky electrode on the semiconductor layer comprising at least one metal selected from Groups 4-6 of the periodic table.
17 . The semiconductor device of claim 16 , wherein the semiconductor layer comprising the crystalline oxide semiconductor with the corundum structure is an n − -type semiconductor layer.
18 . The semiconductor device of claim 17 , further comprising an n + -type semiconductor layer.
19 . The semiconductor device of claim 17 , further comprising an ohmic electrode.
20 . The semiconductor device of claim 17 further comprising:
an insulating layer with a corundum structure arranged between the n − -type semiconductor layer and the Schottky electrode.
21 . The semiconductor device of claim 16 , wherein the crystalline oxide semiconductor with the corundum structure comprised in the semiconductor layer comprises at least gallium.
22 . The semiconductor device of claim 16 , wherein the semiconductor device comprises a capacitance that is 1000 pF or less at 0 V bias when measured at 1 MHz.
23 . A semiconductor device comprising:
a semiconductor layer comprising a crystalline oxide semiconductor with a corundum structure as a major component; and
a Schottky electrode on the semiconductor layer comprising at least one metal selected from Groups 4-9 of the periodic table and comprising a transition metal of the fourth period of the periodic table.
24 . The semiconductor device of claim 23 , wherein the semiconductor layer comprising the crystalline oxide semiconductor with the corundum structure is an n − -type semiconductor layer.
25 . The semiconductor device of claim 24 , further comprising an n + -type semiconductor layer.
26 . The semiconductor device of claim 24 , further comprising an ohmic electrode.
27 . The semiconductor device of claim 24 , further comprising an insulating layer with a corundum structure arranged between the n-type semiconductor layer and the Schottky electrode.
28 . The semiconductor device of claim 23 , wherein the crystalline oxide semiconductor with the corundum structure comprised in the semiconductor layer comprises at least gallium.
29 . The semiconductor device of claim 23 , wherein the crystalline oxide semiconductor with the corundum structure comprised in the semiconductor layer comprises α-Ga 2 O 3 .
30 . The semiconductor device of claim 23 , wherein the crystalline oxide semiconductor with the corundum structure comprised in the semiconductor layer comprises a mixed crystal of α-Ga 2 O 3 .
31 . The semiconductor device of claim 23 , wherein the semiconductor device comprises a capacitance that is 1000 pF or less at 0 V bias when measured at 1 MHz.
32 . A semiconductor device comprising:
a semiconductor layer comprising a crystalline oxide semiconductor with a corundum structure as a major component;
a Schottky electrode that is arranged on the semiconductor layer; and
a capacitance that is 1000 pF or less at 0 V bias when measured at 1 MHz.
33 . The semiconductor device of claim 32 , wherein
The Schottky electrode on the semiconductor layer comprises at least one metal selected from Groups 4-9 of the periodic table.
34 . The semiconductor device of claim 32 , wherein the semiconductor layer comprising the crystalline oxide semiconductor with the corundum structure is an n − -type semiconductor layer.
35 . The semiconductor device of claim 32 , further comprising an n + -type semiconductor layer.
36 . The semiconductor device of claim 32 , further comprising an ohmic electrode.
37 . The semiconductor device of claim 32 , further comprising an insulating layer with a corundum structure arranged between the n − -type semiconductor layer and the Schottky electrode.