CEM switching device
Subject matter herein disclosed relates to a method for the manufacture of a switching device comprising a silicon-containing correlated electron material. In embodiments, processes are described for forming the silicon-containing correlated electron material. These processes may use comparatively lower temperatures as compared to those used for forming a correlated electron material comprising a transition metal oxide.
1. A CEM switching device comprising a correlated electron material (CEM) layer provided on a conductive substrate, wherein the CEM layer comprises a silicon-containing CEM layer comprising a silicate of formula M x Si y O z :dopant, wherein M is a d- or f-block element, the dopant comprises carbon, halogen, nitrogen, sulfur or phosphorus and x, y and z are greater than zero and not necessarily integers.
2. The CEM switching device according to claim 1 , further comprising a conductive overlay provided on the silicon-containing CEM layer.
3. The CEM switching device according to claim 1 , wherein the silicon-containing CEM layer has a silicon content between 1 atom % and 20 atom %.
4. The CEM switching device according to claim 3 , wherein the silicon-containing CEM layer has a dopant content which is less than the silicon content.
5. The CEM switching device according to claim 1 , wherein the metal M is selected from the group consisting of aluminum, cadmium, chromium, cobalt, copper, gold, iron, manganese, mercury, molybdenum, nickel, palladium, rhenium, silver, tantalum, tin, titanium, vanadium, rhenium, ruthenium, silver, tantalum, tin, titanium, vanadium, yttrium, ytterbium and zinc.
6. The CEM switching device according to claim 1 , wherein the silicon-containing CEM layer is amorphous.
7. The CEM switching device according to claim 1 , wherein the silicon-containing CEM layer comprises a carbon-containing ligand such as carbonyl.
8. The CEM switching device according to claim 1 , wherein the d- or f-block element of the silicon-containing CEM layer is nickel.
9. The CEM switching device according to claim 1 , wherein the silicon-containing CEM layer is born-on.
10. The CEM switching device according to claim 1 , wherein the conductive substrate comprises one or more of titanium nitride, tantalum nitride, platinum, titanium, copper, aluminium, cobalt, nickel, tungsten, cobalt silicide, ruthenium, ruthenium oxide, chromium, gold, palladium, indium tin oxide, tantalum, silver, iridium, and iridium oxide.
11. A CEM switching device comprising a correlated electron material (CEM) layer provided with a conductive overlay, wherein the CEM layer comprises a silicon-containing CEM layer comprising a silicate of formula M x Si y O z :dopant, wherein M is a d- or f-block element, the dopant comprises carbon, halogen, nitrogen, sulfur or phosphorus and x, y and z are greater than zero and not necessarily integers.
12. The CEM switching device according to claim 11 , further comprising a conductive overlay provided on the silicon-containing CEM layer.
13. The CEM switching device according to claim 11 , wherein the silicon-containing CEM layer has a silicon content between 1 atom % and 20 atom %.
14. The CEM switching device according to claim 13 , wherein the silicon-containing CEM layer has a dopant content which is less than the silicon content.
15. The CEM switching device according to claim 11 , wherein the metal M is selected from the group consisting of aluminum, cadmium, chromium, cobalt, copper, gold, iron, manganese, mercury, molybdenum, nickel, palladium, rhenium, silver, tantalum, tin, titanium, vanadium, rhenium, ruthenium, silver, tantalum, tin, titanium, vanadium, yttrium, ytterbium and zinc.
16. The CEM switching device according to claim 11 , wherein the silicon-containing CEM layer is amorphous.
17. The CEM switching device according to claim 11 , wherein the silicon-containing CEM layer comprises a carbon-containing ligand such as carbonyl.
18. The CEM switching device according to claim 11 , wherein the silicon-containing CEM layer is born-on.
19. The CEM switching device according to claim 11 , wherein the conductive overlay comprises one or more of titanium nitride, tantalum nitride, platinum, titanium, copper, aluminium, cobalt, nickel, tungsten, cobalt silicide, ruthenium, ruthenium oxide, chromium, gold, palladium, indium tin oxide, tantalum, silver, iridium, and iridium oxide.
20. A method for the manufacture of a CEM switching device, which method comprises:
forming a conductive substrate; and
forming a layer of a silicon-containing correlated electron material (CEM) on or over the conductive substrate, wherein the silicon-containing CEM layer comprises a silicate of formula M x Si y O z :dopant, wherein M is a d- or f-block element, the dopant comprises carbon, halogen, nitrogen, sulfur or phosphorus and x, y and z are greater than zero and not necessarily integers.