Apparatuses and methods for selective row refreshes
Apparatuses and methods for selective row refreshes are disclosed herein. An example apparatus may include a refresh control circuit. The refresh control circuit may be configured to receive a target address associated with a target plurality of memory cells from an address bus. The refresh control circuit may further be configured to provide a proximate address to the address bus responsive, at least in part, to determining that a number of refresh operations have occurred. In some examples, a plurality of memory cells associated with the proximate address may be a plurality of memory cells adjacent the target plurality of memory cells.
1. An apparatus comprising:
a memory device configured to:
provide, via a refresh counter included in the memory device, a first address indicating a first plurality of memory cells;
perform a first refresh operation on the first plurality of memory cells, responsive, at least in part, to an issuance of a first refresh command;
respond to an issuance of an active command to perform an active operation on a second plurality of memory cells indicated by a second address;
provide, via a refresh control circuit included in the memory device, a third address based on the second address, the third address indicating a third plurality of memory cells; and
perform a second refresh operation on the third plurality of memory cells, responsive, at least in part, to an issuance of a second refresh command while suspending performing the first refresh operation on the first plurality of memory cells.
2. The apparatus as claimed in claim 1 , wherein the refresh control circuit is configured to provide a fourth address indicating a fourth plurality of memory cells,
wherein each of the second plurality of memory cells is between a corresponding one of the third plurality of memory cells and a corresponding one of the fourth plurality of memory cells, and
wherein the memory device is further configured to perform consecutively the second refresh operation on the third plurality of memory cells and a third refresh operation on the fourth plurality of memory cells.
3. The apparatus as claimed in claim 1 , wherein the memory device is further configured to resume, after the second refresh operation is performed on the third plurality of memory cells, performing the first refresh operation on the corresponding first plurality of memory cells based on addresses that were provided before the second refresh operation on the third plurality of memory cells was performed.
4. The apparatus as claimed in claim 1 , wherein the refresh command is externally applied to the memory device.
5. The apparatus as claimed in claim 4 , wherein the refresh control circuit is configured to provide a fourth address indicating a fourth plurality of memory cells, responsive, at least in part, to a different issuance of the active command, and
wherein the memory device is configured to perform the second refresh operation on the third plurality of memory cells and a third refresh operation on the fourth plurality of memory cells with an intervention of a first period of time.
6. The apparatus as claimed in claim 5 , wherein the first period of time is defined by a number of the refresh operations.
7. The apparatus as claimed in claim 1 , wherein the memory device is configured to resume, after the second refresh operation is performed on the third plurality of memory cells, performing the first refresh operation on the corresponding first plurality of memory cells.
8. The apparatus of claim 1 , wherein suspending performing the first refresh operation includes holding the first address at a same value during the second refresh operation.
9. The apparatus of claim 8 , further comprising a counter configured to increment the first address based, at least in part, on a control signal from the refresh control circuit,
wherein the refresh control circuit is configured to assert the control signal each time the first operation is performed, and further configured not to assert the control signal during the second refresh operation.