IP Library Assignment 048082/0860
Patent Assignment
Reel/Frame 048082/0860

Supplement No. 11 to Patent Security Agreement

Recorded: 2019-01-16 Pages: 29
Assignor
MICRON TECHNOLOGY, INC.
Executed: 2019-01-15
Assignee
MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
1300 THAMES STREET, 4TH FLOOR, BALTIMORE, MARYLAND, 21231
Covered Properties (376)
Pixel with Strained Silicon Layer for Improving Carrier Mobility and Blue Response in Imagers
Application: 16/161,653 →
Publication: US US20190058000A1
Electronic Systems and Methods of Forming Semiconductor Constructions
Application: 16/200,593 →
Publication: US US20190096994A1
Microelectronic Device Packages, Stacked Microelectronic Device Packages, and Methods for Manufacturing Microelectronic Devices
Application: 16/203,555 →
Publication: US US20190096857A1
Methods of Forming One or More Covered Voids in a Semiconductor Substrate
Application: 16/183,450 →
Publication: US US20190088532A1
Recycled Version Number Values in Flash Memory
Application: 16/229,677 →
Publication: US US20190121555A1
Encoding Data in a Modified-Memory System
Application: 16/183,136 →
Publication: US US20190138388A1
Methods of Forming a Semiconductor Device Using Block Copolymer Materials
Application: 16/215,242 →
Publication: US US20190115252A1
Memory Devices Having Special Mode Access Using a Serial Message
Application: 16/151,845 →
Publication: US US20190035438A1
Systems and Methods to Determine Kinematical Parameters
Application: 16/201,704 →
Publication: US US20190095661A1
Methods of Command Based and Current Limit Controlled Memory Device Power Up
Application: 16/137,133 →
Publication: US US20190027196A1
Memory Systems for Data Collection and Compression in a Storage Device
Application: 16/213,318 →
Publication: US US20190108121A1
Methods of Removing Particles from Over Semiconductor Substrates
Application: 16/165,296 →
Publication: US US20190047025A1
Devices, Systems, and Methods to Synchronize Simultaneous Dma Parallel Processing of a Single Data Stream by Multiple Devices
Application: 16/204,677 →
Publication: US US20190095496A1
Methods and Apparatuses for Reducing Power Consumption in a Pattern Recognition Processor
Application: 16/206,290 →
Publication: US US20190095497A1
Line Termination Methods
Application: 16/166,222 →
Publication: US US20190057029A1
Unaligned Data Coalescing
Application: 16/221,846 →
Publication: US US20190121730A1
Electrically Conductive Laminate Structures
Application: 16/172,444 →
Publication: US US20190067202A1
Programmable Device, Hierarchical Parallel Machines, and Methods for Providing State Information
Application: 16/197,099 →
Publication: US US20190087243A1
Solid State Lighting Devices Having Improved Color Uniformity and Associated Methods
Application: 16/167,172 →
Publication: US US20190058097A1
Solid State Lighting Devices with Improved Current Spreading and Light Extraction and Associated Methods
Application: 16/229,151 →
Publication: US US20190123241A1
Methods, Apparatuses, and Circuits for Programming a Memory Device
Application: 16/184,314 →
Publication: US US20190140174A1
Apparatus and Methods Including Source Gates
Application: 16/237,337 →
Publication: US US20190279715A1
Methods, Articles, and Devices for Pulse Adjustments to Program a Memory Cell
Application: 16/158,852 →
Publication: US US20190108881A1
Memories and Methods to Provide Configuration Information to Controllers
Application: 16/193,506 →
Publication: US US20190088651A1
Circuits, Apparatuses, and Methods for Frequency Division
Application: 16/220,489 →
Publication: US US20190123748A1
Configurable Operating Mode Memory Device and Methods of Operation
Application: 16/166,231 →
Publication: US US20190050162A1
Methods of Operating a Memory Device Comparing Input Data to Data Stored in Memory Cells Coupled to a Data Line
Application: 16/180,137 →
Publication: US US20190074068A1
Methods of Operating a Memory Device Comparing Input Data to Data Stored in Memory Cells Coupled to a Data Line
Application: 16/180,154 →
Publication: US US20190074069A1
Memory Cells, Semiconductor Devices Including the Memory Cells, and Methods of Operation
Application: 16/160,518 →
Publication: US US20190051823A1
Semiconductor Devices and Related Methods
Application: 16/200,969 →
Publication: US US20190103556A1
Memory Having Memory Cell String and Coupling Components
Application: 16/197,174 →
Stacked Semiconductor Die Assemblies with Multiple Thermal Paths and Associated Systems and Methods
Application: 16/229,257 →
Publication: US US20190122950A1
Apparatuses and Methods Using Negative Voltages in Part of Memory Write, Read, and Erase Operations
Application: 16/228,428 →
Publication: US US20190130976A1
Apparatuses and Methods for Memory Operations Having Variable Latencies
Application: 16/189,865 →
Publication: US US20190080733A1
Apparatuses and Methods Involving Accessing Distributed Sub-Blocks of Memory Cells
Application: 16/237,346 →
Publication: US US20190279695A1
Memories Having Select Devices Between Access Lines and in Memory Cells
Application: 16/188,957 →
Publication: US US20190080726A1
Devices, Systems and Methods for Electrostatic Force Enhanced Semiconductor Bonding
Application: 16/206,895 →
Publication: US US20190096732A1
Apparatuses, Circuits, and Methods for Biasing Signal Lines
Application: 16/165,732 →
Publication: US US20190057729A1
Electronic Devices and Related Electronic Systems
Application: 16/202,536 →
Publication: US US20190097125A1
Apparatuses and Methods for Selective Row Refreshes
Application: 16/160,801 →
Publication: US US20190051344A1
Apparatuses and Methods for Selective Row Refreshes
Application: 16/231,327 →
Publication: US US20190130961A1
Array Of Recessed Access Gate Lines
Application: 16/161,381 →
Publication: US US20190051653A1
Apparatuses and Method for Over-Voltage Event Protection
Application: 16/223,352 →
Publication: US US20190148934A1
Apparatuses and Methods for Performing Logical Operations Using Sensing Circuitry
Application: 16/215,026 →
Publication: US US20190108862A1
Semiconductor Device Structures Including Silicon-Containing Dielectric Materials
Application: 16/164,510 →
Publication: US US20190051826A1
Memory Cell with Independently-Sized Elements
Application: 16/212,861 →
Publication: US US20190109176A1
Methods of Forming Structures
Application: 16/178,760 →
Publication: US US20190074183A1
Data Storage Management
Application: 16/209,677 →
Publication: US US20190107949A1
Command Queuing
Application: 16/207,453 →
Publication: US US20190102112A1
Memory Systems and Memory Programming Methods
Application: 16/176,417 →
Publication: US US20190074060A1
Apparatuses, Memories, and Methods for Address Decoding and Selecting an Access Line
Application: 16/218,478 →
Publication: US US20190115073A1
Methods of Operating Memory Devices and Apparatuses
Application: 16/185,729 →
Publication: US US20190081104A1
Semiconductor Device Packages with Direct Electrical Connections and Related Methods
Application: 16/162,012 →
Publication: US US20190051578A1
Array Of Gated Devices And Methods Of Forming An Array Of Gated Devices
Application: 16/183,493 →
Publication: US US20190088534A1
Semiconductor Device Test Apparatuses Comprising at Least One Test Site Having an Array of Pockets
Application: 16/177,917 →
Publication: US US20190072608A1
Self-Accumulating Exclusive or Program
Application: 16/229,578 →
Publication: US US20190114222A1
Apparatuses and Methods for Reducing Read Disturb
Application: 16/182,355 →
Publication: US US20190074070A1
Apparatuses Including Multiple Read Modes and Methods for Same
Application: 16/235,951 →
Publication: US US20190139587A1
Semiconductor Die Assemblies with Heat Sink and Associated Systems and Methods
Application: 16/203,538 →
Publication: US US20190109019A1
Methods of Forming Memory Cells and Semiconductor Devices
Application: 16/172,260 →
Publication: US US20190067573A1
Apparatuses and Methods for Performing an Exclusive or Operation Using Sensing Circuitry
Application: 16/219,644 →
Publication: US US20190115064A1
Semiconductor Device Including Sensor
Application: 16/228,377 →
Publication: US US20190120704A1
Sort Operation in Memory
Application: 16/208,121 →
Publication: US US20190341098A1
Multiple Endianness Compatibility
Application: 16/219,569 →
Publication: US US20190122706A1
Scalable Memory System Protocol Supporting Programmable Number of Levels of Indirection
Application: 16/208,035 →
Publication: US US20190102095A1
Dynamic Adjustment of Memory Cell Digit Line Capacitance
Application: 16/184,492 →
Publication: US US20190147932A1
Vector Population Count Determination via Comparison Iterations in Memory
Application: 16/207,786 →
Publication: US US20190102172A1
Apparatus Configured to Program Memory Cells Using an Intermediate Level for Multiple Data States
Application: 16/186,739 →
Publication: US US20190088343A1
Cell-Based Reference Voltage Generation
Application: 16/183,021 →
Publication: US US20190074046A1
Face Down Dual Sided Chip Scale Memory Package
Application: 16/196,262 →
Publication: US US20190088565A1
Apparatuses and Methods for Memory Device as a Store for Block Program Instructions
Application: 16/224,498 →
Publication: US US20190121724A1
Devices and Apparatuses Including Asymmetric Ferroelectric Materials, and Related Methods
Application: 16/194,820 →
Publication: US US20190103151A1
Apparatuses and Methods for Shift Decisions
Application: 16/224,588 →
Publication: US US20190147937A1
Logical Address History Management in Memory Device
Application: 16/209,197 →
Publication: US US20190107952A1
Methods and Devices for Reducing Array Size and Complexity in Automata Processors
Application: 16/195,505 →
Publication: US US20190197017A1
Gate Stacks
Application: 16/201,624 →
Publication: US US20190097017A1
Charge Extraction from Ferroelectric Memory Cell
Application: 16/201,329 →
Publication: US US20190096466A1
Charge Extraction from Ferroelectric Memory Cell
Application: 16/201,351 →
Publication: US US20190096467A1
Methods of Operating Microelectronic Devices Including a Controller
Application: 16/194,888 →
Publication: US US20190088627A1
Apparatuses and Methods for Asymmetric Input/Output Interface for a Memory
Application: 16/193,286 →
Publication: US US20190087366A1
Solid State Storage Device with Command and Control Access
Application: 16/166,001 →
Publication: US US20190058598A1
Ground Reference Scheme for a Memory Cell
Application: 16/184,480 →
Publication: US US20190130955A1
Apparatuses and Methods for Temperature Independent Oscillators
Application: 16/225,678 →
Publication: US US20190123685A1
Apparatuses and Methods for Chip Identification in a Memory Package
Application: 16/192,639 →
Publication: US US20190088296A1
Apparatuses and Methods for Current Limitation in Threshold Switching Memories
Application: 16/190,563 →
Publication: US US20190080756A1
Target Architecture Determination
Application: 16/199,477 →
Publication: US US20190095182A1
Arrays of Cross-Point Memory Structures, and Methods of Forming Arrays of Cross-Point Memory Structures
Application: 16/179,156 →
Publication: US US20190080956A1
Apparatuses and Methods for Scalable Memory
Application: 16/199,460 →
Publication: US US20190096855A1
Non-Volatile Memory Module Architecture to Support Memory Error Correction
Application: 16/201,576 →
Publication: US US20190095131A1
Non-Volatile Memory Including Selective Error Correction
Application: 16/196,304 →
Publication: US US20190087267A1
Methods and Apparatuses for Signal Translation in a Buffered Memory
Application: 16/216,742 →
Publication: US US20190109755A1
Methods of Forming Semiconductor Devices
Application: 16/200,902 →
Publication: US US20190103350A1
Error Code Calculation on Sensing Circuitry
Application: 16/212,513 →
Publication: US US20190108094A1
Apparatuses and Methods for Multiple Address Registers for a Solid State Device
Application: 16/174,631 →
Publication: US US20190065104A1
Apparatuses and Methods for Level Shifting
Application: 16/177,821 →
Publication: US US20190074838A1
Memory Device with Write Data Bus Control
Application: 16/225,303 →
Publication: US US20190122708A1
Writing to Cross-Point Non-Volatile Memory
Application: 16/184,827 →
Publication: US US20190139591A1
Error Correction Code (Ecc) Operations in Memory
Application: 16/219,143 →
Publication: US US20190129791A1
Ferroelectric Memory Cell Apparatuses and Methods of Operating Ferroelectric Memory Cells
Application: 16/140,281 →
Publication: US US20190027203A1
Charge Sharing Between Memory Cell Plates Using a Conductive Path
Application: 16/188,855 →
Publication: US US20190108866A1
Charge Mirror-Based Sensing for Ferroelectric Memory
Application: 16/189,425 →
Publication: US US20190108867A1
Ferroelectric Memory Cell Recovery
Application: 16/181,125 →
Publication: US US20190080782A1
Accessing Data in Memory
Application: 16/194,024 →
Publication: US US20190088291A1
Apparatuses for Reducing Off State Leakage Currents
Application: 16/201,657 →
Publication: US US20190149143A1
Logic Component Switch
Application: 16/215,719 →
Publication: US US20190114280A1
System and Method for Individual Addressing
Application: 16/192,509 →
Publication: US US20190087360A1
Package-On-Package Semiconductor Device Assemblies Including One or More Windows and Related Methods and Packages
Application: 16/162,070 →
Publication: US US20190051631A1
Data Transfer Techniques for Multiple Devices on a Shared Bus
Application: 16/184,307 →
Publication: US US20190138238A1
Methods of Forming Semiconductor Device Structures
Application: 16/202,999 →
Publication: US US20190139977A1
Apparatuses and Methods for Random Number Generation
Application: 16/213,835 →
Publication: US US20190108000A1
Element Value Comparison in Memory
Application: 16/207,284 →
Publication: US US20190103141A1
Apparatuses and Methods for Staircase Code Encoding and Decoding for Storage Devices
Application: 16/162,278 →
Publication: US US20190058493A1
Integrated Structures Including Material Containing Silicon, Nitrogen, and at Least One of Carbon, Oxygen, Boron and Phosphorus
Application: 16/158,039 →
Publication: US US20190043890A1
Adaptive Routing to Avoid Non-Repairable Memory and Logic Defects on Automata Processor
Application: 16/197,007 →
Publication: US US20190087201A1
Semiconductor Devices Including Liners, and Related Systems
Application: 16/202,379 →
Publication: US US20190097133A1
Managing Host Communication with a Regulator in a Low Power Mode
Application: 16/211,048 →
Publication: US US20190107966A1
Dynamic Reference Voltage Determination
Application: 16/184,460 →
Publication: US US20190147934A1
Vertical Two-Transistor Single Capacitor Memory Cells and Memory Arrays
Application: 16/183,468 →
Publication: US US20190088652A1
Error Correction Code (Ecc) Operations in Memory
Application: 16/220,491 →
Publication: US US20190123768A1
Vertical 2T-2C Memory Cells and Memory Arrays
Application: 16/183,528 →
Publication: US US20190088653A1
Apparatuses Having Memory Strings Compared to One Another Through a Sense Amplifier
Application: 16/234,319 →
Publication: US US20190259444A1
Circuit and Layout for Single Gate Type Precharge Circuit for Data Lines in Memory Device
Application: 16/197,185 →
Publication: US US20190088654A1
Memory Devices and Systems with Security Capabilities
Application: 16/164,332 →
Publication: US US20190050297A1
Apparatus and Method of Power Transmission Sensing for Stacked Devices
Application: 16/190,523 →
Publication: US US20190081024A1
Obfuscation-Enhanced Memory Encryption
Application: 16/223,162 →
Publication: US US20190121557A1
Apparatuses and Methods for High Speed Writing Test Mode for Memories
Application: 16/164,328 →
Publication: US US20190051369A1
Apparatus and Methods for in Data Path Compute Operations
Application: 16/220,912 →
Publication: US US20190121757A1
Active Boundary Quilt Architecture Memory
Application: 16/189,447 →
Publication: US US20190103139A1
Identifying Asynchronous Power Loss
Application: 16/178,963 →
Publication: US US20190073251A1
Apparatuses and Methods for Providing Reference Voltages
Application: 16/203,215 →
Publication: US US20190094900A1
Memory Cell, An Array Of Memory Cells Individually Comprising A Capacitor And A Transistor With The Array Comprising Rows Of Access Lines And Columns Of Digit Lines, A 2T-1C Memory Cell, And Methods Of Forming An Array Of Capacitors And Access Transistors There-Above
Application: 16/238,653 →
Publication: US US20190139960A1
Chalcogenide Memory Device Components and Composition
Application: 16/184,465 →
Publication: US US20190081103A1
Cell Disturb Prevention Using a Leaker Device to Reduce Excess Charge from an Electronic Device
Application: 16/228,072 →
Publication: US US20190198512A1
Periphery Fill and Localized Capacitance
Application: 16/189,416 →
Publication: US US20190172515A1
Construction Of Integrated Circuitry And A Method Of Forming An Elevationally-Extending Conductor Laterally Between A Pair Of Structures
Application: 16/183,390 →
Publication: US US20190139893A1
Methods of Sketch-Based Memory Management and Memory Devices Utilizing the Same
Application: 16/212,540 →
Publication: US US20190107963A1
Methods of Bit-Flagged Sketch-Based Memory Management and Memory Devices Utilizing the Same
Application: 16/212,514 →
Publication: US US20190107958A1
Memory Cells and Memory Arrays
Application: 16/204,409 →
Publication: US US20190096894A1
Memory Device Including Voids Between Control Gates
Application: 16/197,217 →
Publication: US US20190109190A1
Scan Chain Operations
Application: 16/221,233 →
Publication: US US20190120902A1
Apparatuses and Methods for in-Memory Operations
Application: 16/218,876 →
Publication: US US20190115063A1
Three-Dimensional Memory Devices, and Related Methods and Electronic Systems
Application: 16/183,392 →
Publication: US US20190096906A1
Refresh in Non-Volatile Memory
Application: 16/218,787 →
Publication: US US20190115062A1
Dual Mode Ferroelectric Memory Cell Operation
Application: 16/184,276 →
Publication: US US20190122717A1
Dual Mode Ferroelectric Memory Cell Operation
Application: 16/184,300 →
Publication: US US20190122718A1
Memory Device Including Mixed Non-Volatile Memory Cell Types
Application: 16/197,208 →
Publication: US US20190087103A1
Memory Management
Application: 16/214,701 →
Publication: US US20190108108A1
Memory Device Including Pass Transistors in Memory Tiers
Application: 16/228,574 →
Publication: US US20190123058A1
Mixed Cross Point Memory
Application: 16/185,146 →
Publication: US US20190156884A1
Mixed Cross Point Memory
Application: 16/185,154 →
Publication: US US20190156885A1
Input Buffer Circuit
Application: 16/229,214 →
Publication: US US20190115055A1
Apparatus and Methods for via Connection with Reduced via Currents
Application: 16/192,673 →
Publication: US US20190098855A1
Arrays Of Memory Cells Individually Comprising A Capacitor And An Elevationally-Extending Transistor, Methods Of Forming A Tier Of An Array Of Memory Cells, And Methods Of Forming An Array Of Memory Cells Individually Comprising A Capacitor And An Elevationally-Extending Transistor
Application: 16/238,689 →
Publication: US US20190136207A1
Memory Device with Dynamic Storage Mode Control
Application: 16/167,345 →
Publication: US US20190065367A1
Wiring with External Terminal
Application: 16/183,615 →
Publication: US US20190074834A1
Offset Cancellation for Latching in a Memory Device
Application: 16/184,823 →
Publication: US US20190147933A1
Memory Arrays, and Methods of Forming Memory Arrays
Application: 16/180,542 →
Apparatuses and Methods for Configurable Command and Data Input Circuits for Semiconductor Memories
Application: 16/190,504 →
Publication: US US20190080743A1
Memory Cells Having Resistors and Formation of the Same
Application: 16/216,100 →
Publication: US US20190123105A1
Mitigating Line-to-Line Capacitive Coupling in a Memory Die
Application: 16/189,434 →
Publication: US US20190108869A1
Methods of Forming Semiconductor Device Structures
Application: 16/178,893 →
Publication: US US20190088472A1
Methods of Forming Staircase Structures
Application: 16/164,542 →
Publication: US US20190206726A1
Characterization of Decision Feedback Equalizer Taps
Application: 16/201,671 →
Publication: US US20190116070A1
A Device Module Having a Plurality of Dies Electrically Connected by Posts
Application: 16/175,449 →
Publication: US US20190067233A1
Responding to Power Loss
Application: 16/222,160 →
Publication: US US20190122739A1
Semiconductor Structures Including Memory Materials Substantially Encapsulated with Dielectric Materials
Application: 16/185,829 →
Publication: US US20190088873A1
Semiconductor Constructions Comprising Dielectric Material, and Methods of Forming Dielectric Fill Within Openings Extending into Semiconductor Constructions
Application: 16/179,415 →
Publication: US US20190067084A1
Time-Based Access of a Memory Cell
Application: 16/159,023 →
Publication: US US20190066754A1
Time-Based Access of a Memory Cell
Application: 16/159,049 →
Publication: US US20190066755A1
Semiconductor Structures, Memory Cells and Devices Comprising Ferroelectric Materials, Systems Including Same, and Related Methods
Application: 16/201,478 →
Publication: US US20190096897A1
Semiconductor Devices, and Related Control Logic Assemblies, Electronic Systems, and Methods
Application: 16/203,321 →
Publication: US US20190206449A1
Program Operations in Memory
Application: 16/215,693 →
Publication: US US20190122709A1
Asymmetrical Multi-Gate String Driver for Memory Device
Application: 16/227,874 →
Publication: US US20190122737A1
Methods of Forming a Memory Structure
Application: 16/202,891 →
Publication: US US20190165263A1
Multifunctional Memory Cells
Application: 16/218,125 →
Publication: US US20190122733A1
Electronic Devices Having Tapered Edge Walls
Application: 16/200,843 →
Publication: US US20190109080A1
Methods of Processing Semiconductor Devices
Application: 16/200,873 →
Publication: US US20190109081A1
Reflow Protection
Application: 16/209,152 →
Publication: US US20190108878A1
Dqs-Offset and Read-Rtt-Disable Edge Control
Application: 16/200,443 →
Publication: US US20190096451A1
Semiconductor Devices with Package-Level Configurability
Application: 16/201,811 →
Publication: US US20190148359A1
Data Output for High Frequency Domain
Application: 16/197,871 →
Publication: US US20190090499A1
Dynamic Termination Edge Control
Application: 16/200,450 →
Publication: US US20190097630A1
Systems and Methods for Frequency Mode Detection and Implementation
Application: 16/205,356 →
Publication: US US20190101975A1
Methods of Filling Openings with Conductive Material, and Assemblies Having Vertically-Stacked Conductive Structures
Application: 16/186,042 →
Publication: US US20190189630A1
Analog Multiplexing Scheme for Decision Feedback Equalizers
Application: 16/191,169 →
Publication: US US20190222445A1
Voltage Reference Computations for Memory Decision Feedback Equalizers
Application: 16/204,716 →
Publication: US US20190096445A1
Power Reduction Technique During Read/Write Bursts
Application: 16/193,825 →
Publication: US US20190206476A1
Multi-Phase Clock Division
Application: 16/200,460 →
Publication: US US20190189184A1
Apparatuses and Methods for Providing Bias Signals in a Semiconductor Device
Application: 16/229,266 →
Publication: US US20190172507A1
Pseudo-Non-Volatile Memory Cells
Application: 16/235,163 →
Publication: US US20190279704A1
Apparatuses and Methods for Providing Frequency Divided Clocks
Application: 16/150,492 →
Publication: US US20190199364A1
3D Memory Device Including Shared Select Gate Connections Between Memory Blocks
Application: 16/228,534 →
Publication: US US20190147954A1
Methods of Determining Host Clock Frequency for Run Time Optimization of Memory and Memory Devices Employing the Same
Application: 16/174,782 →
Publication: US US20190066742A1
Memory Devices with Programmable Latencies and Methods for Operating the Same
Application: 16/212,565 →
Publication: US US20190107974A1
Systems and Methods for Maintaining Refresh Operations of Memory Banks Using a Shared Address Path
Application: 16/192,389 →
Publication: US US20190130963A1
Methods of Synchronizing Memory Operations and Memory Systems Employing the Same
Application: 16/212,572 →
Publication: US US20190107975A1
I/O Buffer Offset Mitigation
Application: 16/178,989 →
Publication: US US20190214089A1
Internal Clock Distortion Calibration Using Dc Component Offset of Clock Signal
Application: 16/204,841 →
Publication: US US20190190501A1
Namespace Change Propagation in Non-Volatile Memory Devices
Application: 16/236,897 →
Publication: US US20190146912A1
Methods for Processing Semiconductor Dice and Fabricating Assemblies Incorporating Same
Application: 16/199,788 →
Publication: US US20190198388A1
Uncorrectable Ecc
Application: 16/079,737 →
Publication: US US20210012851A1
Increased Nand Performance Under High Thermal Conditions
Application: 16/219,144 →
Publication: US US20190130979A1
Optimized Scan Interval
Application: 16/230,251 →
Publication: US US20190122705A1
Systems and Methods for Initializing Bandgap Circuits
Application: 16/096,638 →
Publication: US US20210232171A1
Electronic Device with a Fuse Read Mechanism
Application: 16/216,948 →
Publication: US US20190147968A1
Data Strobe Gating
Application: 16/175,676 →
Output Impedance Calibration for Signaling
Application: 16/154,291 →
Publication: US US20190296740A1
Artificial Neural Network Integrity Verification
Application: 16/229,044 →
Publication: US US20190265701A1
Single Word Line Gain Cell with Complementary Read Write Channel
Application: 62/785,163 →
Methods of Forming an Apparatus, and Related Apparatuses and Electronic Systems
Application: 16/235,957 →
Publication: US US20200212046A1
Memory Device and Managed Memory System with Wireless Debug Communication Port and Methods for Operating the Same
Application: 16/231,267 →
Publication: US US20200204991A1
Cross Point Array Memory in a Non-Volatile Dual in-Line Memory Module
Application: 16/226,626 →
Publication: US US20190333548A1
Memory Arrays And Methods Used In Forming A Memory Array
Application: 16/230,382 →
Publication: US US20200127004A1
Decoder Circuit
Application: 16/219,671 →
Publication: US US20200194045A1
Leakage Compensation for Memory Arrays
Application: 16/216,057 →
Publication: US US20200185019A1
Semiconductor Device Performing Row Hammer Refresh Operation
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Memory Cells Configured to Generate Weighted Inputs for Neural Networks
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Electrical Device with Test Pads Encased Within the Packaging Material
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Devices Including Conductive Interconnect Structures, Related Electronic Systems, and Related Methods
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Apparatuses and Methods for Refresh Operations Including Multiple Refresh Activations
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Methods and System with Dynamic Ecc Voltage and Frequency
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Management of Power State Transitions of a Memory Sub-System
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Apparatuses and Methods for Refresh Operations in Semiconductor Memories
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Apparatuses and Methods for Multi-Bank Refresh Timing
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Secure Communication for Log Reporting in Memory Sub-Systems
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Apparatus and Methods for Determining Data States of Memory Cells
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Holdup Self-Tests for Power Loss Operations on Memory Systems
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Parking Infrastructure Powered by a Decentralized, Distributed Database
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Automated Verification Code Generation Based on a Hardware Design and Design Data
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Binary Parallel Adder and Multiplier
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Hybrid Logical to Physical Caching Scheme
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File Creation with Requester-Specified Backing
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Providing Information for a Controller Memory Buffer Elasticity Status of a Memory Sub-System to a Host System
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Interposers for Microelectronic Devices
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Methods for Activity-Based Memory Maintenance Operations and Memory Devices and Systems Employing the Same
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Detection of Illegal Commands
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Semiconductor Devices with Package-Level Configurability
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Memory Devices, Modules and Systems Having Dynamic Densities
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Memory Sub-System with Multiple Ports Having Single Root Virtualization
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Multistage Development Workflow for Generating a Custom Instruction Set Reconfigurable Processor
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Semiconductor Device Having a Reduced Footprint of Wires Connecting a Dll Circuit with an Input/Output Buffer
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Semiconductor Devices Including Insulative Materials Extending Between Conductive Structures
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Integrated Structures and Methods of Forming Vertically-Stacked Memory Cells
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Memory Including Blocking Dielectric in Etch Stop Tier
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Methods for Forming Semiconductor Devices
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Methods of Manufacturing a Multi-Device Package
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Methods of Fabricating a Decoupling Capacitor in a Semiconductor Structure
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Semiconductor Devices
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Executing Applications from a Semiconductor Nonvolatile Memory
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Multi-Partitioning of Memories
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Persistent Content in Nonvolatile Memory
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Wireless Communication Link Using Near Field Coupling
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Memory Device with a Common Source Select Line for Two Memory Portions of a Logic Sector
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Apparatuses and Methods for Coupling Data Lines in Memory Devices
Methods of Processing Semiconductor Device Structures and Related Systems
Methods of Forming Staircase Structures and Related Staircase Structures and Semiconductor Device Structures
Temperature-Based Memory Operations
Drift Mitigation with Embedded Refresh
Semiconductor Assemblies Using Edge Stacking and Method of Manufacturing the Same
Methods Comprising an Atomic Layer Deposition Sequence
Polarity-Conditioned Memory Cell Write Operations
Semiconductor Devices, and Related Control Logic Assemblies, Control Logic Devices, Electronic Systems, and Methods
Hydrosilylation in Semiconductor Processing
Sublimation in Forming a Semiconductor
Semiconductor Devices Including Control Logic Structures, Electronic Systems, and Related Methods
Memory Cells, Memory Arrays, and Methods of Forming Memory Arrays
Assemblies Having Conductive Structures Along Pillars of Semiconductor Material, and Methods of Forming Intgrated Circuitry
Ufs Based Idle Time Garbage Collection Management
Apparatuses and Methods for Sense Line Architectures for Semicondcutor Memories
System Having a Hybrid Threading Processor, a Hybrid Threading Fabric Having Configurable Computing Elements, and a Hybrid Interconnection Network
Transistors and Arrays of Elevationally-Extending Strings of Memory Cells
Memory Arrays Comprising Memory Cells
Methods of Forming a Channel Region of a Transistor and Method Used in Forming a Memory Array
Comparing Input Data to Stored Data
Ferroelectric Assemblies and Methods of Forming Ferroelectric Assemblies
Wave Pipeline
Transistors and Methods of Forming Transistors
Memory Arrays, and Methods of Forming Memory Arrays
Memory Arrays, and Methods of Forming Memory Arrays
Transistors Comprising at Least One of Gap, Gan and Gaas
Methods of Incorporating Leaker Devices into Capacitor Configurations to Reduce Cell Disturb, and Capacitor Configurations Incorporating Leaker Devices
Multilevel Addressing
Data Movement Operations in Non-Volatile Memory
Multi-Level Self-Selecting Memory Device
Implementing Safety Measures in Applications
Methods Used in Forming at Least a Portion of at Least One Conductive Capacitor Electrode of a Capacitor That Comprises a Pair of Conductive Capacitor Electrodes Having a Capacitor Insulator There-Between and Methods of Forming a Capacitor
Internal Clock Distortion Calibration Using Dc Component Offset of Clock Signal
Recessed Access Devices and Dram Constructions
Secure Vehicle Control Unit Update
Assemblies Containing Pmos Decks Vertically-Integrated with Nmos Decks, and Methods of Forming Integrated Assemblies
Techniques for Precharging a Memory Cell
Operations on Memory Cells
Techniques to Access a Self-Selecting Memory Device
Methods for Independent Memory Bank Maintenance and Memory Devices and Systems Employing the Same
Using Sacrificial Solids in Semiconductor Processing
Freezing a Sacrificial Material in Forming a Semiconductor
Managing Partial Superblocks in a Nand Device
Common Pool Management
Dynamic L2P Cache
Interconnect Structures for Preventing Solder Bridging, and Associated Systems and Methods
Pillar-Last Methods for Forming Semiconductor Devices
Charge Separation for Memory Sensing
Secure Message Including a Vehicle Private Key
Apparatuses and Methods for Subarray Addressing
Apparatuses and Methods for Subrow Addressing
Vehicle Secure Messages Based on a Vehicle Private Key
Utilizing Write Stream Attributes in Storage Write Commands
Variable Modulation Scheme for Memory Device Access or Operation
Multiplexing Distinct Signals on a Single Pin of a Memory Device
Multiple Concurrent Modulation Schemes in a Memory System
Communicating Data with Stacked Memory Dies
Memory System That Supports Dual-Mode Modulation
Semiconductor Device with a Layered Protection Mechanism and Associated Systems, Devices, and Methods
Selectable Trim Settings on a Memory Device
Configurable Trim Settings on a Memory Device
Trim Setting Determination for a Memory Device
Trim Setting Determination on a Memory Device
Host Accelerated Operations in Managed Nand Devices
Material Implication Operations in Memory
Current Separation for Memory Sensing
Physical Unclonable Function Using Message Authentication Code
Security of User Data Stored in Shared Vehicles
Logical Block Mapping Based on an Offset
Semiconductor Device Assemblies Including Multiple Stacks of Different Semiconductor Dies
Semiconductor Devices Including Control Logic Levels, and Related Memory Devices, Control Logic Assemblies, Electronic Systems, and Methods
Certifying Authenticity of Stored Code and Code Updates
Performance Level Adjustments in Memory Devices
Integrated Assemblies, and Methods of Forming Integrated Assemblies
Techniques for Clock Signal Jitter Generation
Performance Allocation Among Users for Accessing Non-Volatile Memory Devices
Dfe Conditioning for Write Operations of a Memory Device
Gap Detection for Consecutive Write Operations of a Memory Device
Improved Timing Circuit for Command Path in a Memory Device
Write Level Arbiter Circuitry
Nand Flash Thermal Alerting
Jitter Cancellation with Automatic Performance Adjustment
Related Assignments (8)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest Nov 27, 2018
From: TUTTLE, JOHN R.
To: KEYSTONE TECHNOLOGY SOLUTIONS, LLC.
Reel/Frame 047595/0667 →
Assignment of Assignor's Interest Nov 27, 2018
From: KEYSTONE TECHNOLOGY SOLUTIONS, LLC.
To: MICRON TECHNOLOGY, INC.
Reel/Frame 047650/0192 →
Assignment of Assignor's Interest Dec 17, 2018
From: PALMER, DAVID A.
To: MICRON TECHNOLOGY, INC.
Reel/Frame 047793/0747 →
Assignment of Assignor's Interest Dec 18, 2018
From: HUSH, GLEN E.
To: MICRON TECHNOLOGY, INC.
Reel/Frame 047811/0239 →
Supplement No. 2 to Patent Security Agreement Jan 16, 2019
From: MICRON TECHNOLOGY, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
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Release of Security Interest Oct 14, 2019
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To: MICRON TECHNOLOGY, INC.
Reel/Frame 050718/0764 →
Release of Security Interest Nov 15, 2019
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To: MICRON TECHNOLOGY, INC.
Reel/Frame 051026/0568 →
Confirmatory License Oct 23, 2023
From: MICRON TECHNOLOGY, INC.
To: LODESTAR LICENSING GROUP LLC
Reel/Frame 065313/0397 →