Semiconductor device structures including silicon-containing dielectric materials
View Patent ↗A method of forming a silicon-containing dielectric material. The method includes forming a plasma comprising nitrogen radicals, absorbing the nitrogen radicals onto a substrate, and exposing the substrate to a silicon-containing precursor in a non-plasma environment to form monolayers of a silicon-containing dielectric material on the substrate. Additional methods are also described, as are semiconductor device structures including the silicon-containing dielectric material and methods of forming the semiconductor device structures.
1. A semiconductor device comprising:
stacks separated from one another by a distance of from 180 Å to 200 Å; and
at least one conformal silicon-containing dielectric material adjacent to each of the stacks.
2. The semiconductor device of claim 1 , wherein the at least one conformal silicon-containing dielectric material comprises at least one of a silicon oxide material, a silicon nitride material, a silicon carbon nitride material, or a silicon carbon oxide material.
3. The semiconductor device of claim 1 , wherein the at least one conformal silicon-containing dielectric material comprises at least one of a silicon oxide material or a silicon nitride material.
4. The semiconductor device of claim 3 , wherein the at least one conformal silicon-containing dielectric material further comprises carbon.
5. The semiconductor device of claim 1 , wherein the at least one conformal silicon-containing dielectric material comprises from 30% to 70% silicon, from 4% to 25% carbon, and from 5% to 66% oxygen.
6. The semiconductor device of claim 1 , wherein the at least one conformal silicon-containing dielectric material comprises from 30% to 70% silicon, from 4% to 25% carbon, and from 5% to 66% nitrogen.
7. The semiconductor device of claim 1 , wherein the stacks comprise at least one of a chalcogenide material or a carbon material.
8. The semiconductor device of claim 1 , wherein the at least one conformal silicon-containing dielectric material comprises a thickness of from 10 Å to 1000 Å.
9. A semiconductor device comprising:
stacks comprising a carbon material, the stacks separated from one another by a distance of from 50 Å to 220 Å; and
at least one conformal silicon-containing dielectric material in contact with the stacks.
10. The semiconductor device of claim 9 , wherein the at least one conformal silicon-containing dielectric material comprises silicon oxide or silicon dioxide.
11. The semiconductor device of claim 10 , wherein the at least one conformal silicon-containing dielectric material further comprises carbon.
12. The semiconductor device of claim 9 , wherein the stacks further comprise a chalcogenide material.
13. The semiconductor device of claim 9 , wherein the at least one conformal silicon-containing dielectric material comprises a first conformal silicon-containing dielectric material in contact with the stacks and a second conformal silicon-containing dielectric material in contact with the first conformal silicon-containing dielectric material.
14. The semiconductor device of claim 13 , further comprising a third conformal silicon-containing dielectric material in contact with the second conformal silicon-containing dielectric material.
15. The semiconductor device of claim 14 , wherein:
the first conformal silicon-containing dielectric material comprises a silicon carbon nitride material;
the second conformal silicon-containing dielectric material comprises one of a silicon oxide material, a silicon nitride material, or a silicon carbon oxide material; and
the third conformal silicon-containing dielectric material comprises one of the silicon oxide material, the silicon nitride material, or the silicon carbon oxide material, the second conformal silicon-containing dielectric material and the third conformal silicon-containing dielectric material comprising different materials.
16. The semiconductor device of claim 14 , wherein the first conformal silicon-containing dielectric material comprises a silicon carbon nitride material, the second conformal silicon-containing dielectric material comprises a silicon nitride material, and the third conformal silicon-containing dielectric material comprises a silicon carbon oxide material.
17. The semiconductor device of claim 9 , wherein the at least one conformal silicon-containing dielectric material decreases the distance between the stacks.
18. A semiconductor device comprising:
stacks separated from one another by a distance of from 50 Å to 220 Å; and
at least one conformal silicon-containing dielectric material contacting the stacks, the at least one conformal silicon-containing dielectric material comprising from 30% to 70% silicon, from 4% to 25% carbon, and from 5% to 66% oxygen.
19. The semiconductor device of claim 18 , wherein the at least one conformal silicon-containing dielectric material directly contacts the stacks.