Dual mode ferroelectric memory cell operation
Methods, systems, and devices for dual mode ferroelectric memory cell operation are described. A memory array or portions of the array may be variously operated in volatile and non-volatile modes. For example, a memory cell may operate in a non-volatile mode and then operate in a volatile mode following a command initiated by a controller while the cell is operating in the non-volatile mode. The memory cell may operate in the volatile mode and then operate in the non-volatile mode following a subsequent command. In some examples, one memory cell of the memory array may operate in the non-volatile mode while another memory cell of the memory array operates in the volatile mode.
1. A method, comprising:
operating a ferroelectric memory cell of a memory array in a non-volatile mode;
initiating a first command to switch the ferroelectric memory cell from the non-volatile mode to a volatile mode;
sensing, based at least in part on the first command, a first logic state of the ferroelectric memory cell based at least in part on a signal from a ferroelectric capacitor of the ferroelectric memory cell;
switching the ferroelectric memory cell from the non-volatile mode to the volatile mode based at least in part on sensing the first logic state;
storing the first logic state in the ferroelectric capacitor of the ferroelectric memory cell after switching the ferroelectric memory cell from the non-volatile mode to the volatile mode; and
operating the ferroelectric memory cell in the volatile mode based at least in part on the first command.
2. The method of claim 1 , wherein initiating the first command comprises:
selecting a first portion of the memory array.
3. The method of claim 1 , further comprising:
initiating a second command while operating the ferroelectric memory cell in the volatile mode; and
operating the ferroelectric memory cell in the non-volatile mode based at least in part on the second command.
4. The method of claim 3 , wherein initiating the second command comprises:
deselecting a first portion of the memory array.
5. The method of claim 1 , further comprising:
operating a second ferroelectric memory cell of the memory array in the non-volatile mode while operating the ferroelectric memory cell in the volatile mode.
6. The method of claim 1 , further comprising:
operating a second ferroelectric memory cell of the memory array in the volatile mode while operating the ferroelectric memory cell in the volatile mode.
7. The method of claim 1 , further comprising:
determining whether the ferroelectric memory cell is in the non-volatile mode or the volatile mode at a first time; and
determining whether a second ferroelectric memory cell of the memory array is in the non-volatile mode or the volatile mode at the first time.
8. The method of claim 7 , further comprising:
adjusting an operation mode of the second ferroelectric memory cell based at least in part on determining whether the second ferroelectric memory cell is in the non-volatile mode or the volatile mode.
9. An apparatus comprising:
a ferroelectric memory cell of a memory array;
a transistor coupled to the ferroelectric memory cell;
a controller in electronic communication with the transistor and a sensing component, wherein the controller is configured to cause the apparatus to:
operate the ferroelectric memory cell in a non-volatile mode;
initiate a first command to switch the ferroelectric memory cell from the non-volatile mode to a volatile mode;
sense, using the sensing component and based at least in part on the first command, a first logic state of the ferroelectric memory cell based at least in part on a signal from a ferroelectric capacitor of the ferroelectric memory cell;
switch the ferroelectric memory cell from the non-volatile mode to the volatile mode based at least in part on sensing the first logic state;
store the first logic state in the ferroelectric capacitor of the ferroelectric memory cell after switching the ferroelectric memory cell from the non-volatile mode to the volatile mode; and
operate the ferroelectric memory cell in the volatile mode based at least in part on the first command.
10. The apparatus claim 9 , wherein the controller is configured to cause the apparatus to:
select a first portion of the memory array, wherein initiating the first command comprises selecting the first portion of the memory array.
11. The apparatus of claim 9 , wherein the controller is configured to cause the apparatus to:
initiate a second command while operating the ferroelectric memory cell in the volatile mode; and
operate the ferroelectric memory cell in the non-volatile mode based at least in part on the second command.
12. The apparatus of claim 11 , wherein the controller is configured to cause the apparatus to:
deselect a first portion of the memory array, wherein initiating the second command comprises deselecting the first portion of the memory array.
13. The apparatus of claim 9 , wherein the controller is configured to cause the apparatus to:
operate a second ferroelectric memory cell of the memory array in the non-volatile mode while operating the ferroelectric memory cell in the volatile mode.
14. The apparatus of claim 9 , wherein the controller is configured to cause the apparatus to:
operate a second ferroelectric memory cell of the memory array in the volatile mode while operating the ferroelectric memory cell in the volatile mode.
15. The apparatus of claim 9 , wherein the controller is configured to cause the apparatus to:
determine whether the ferroelectric memory cell is in the non-volatile mode or the volatile mode at a first time; and
determine whether a second ferroelectric memory cell of the memory array is in the non-volatile mode or the volatile mode at the first time.
16. A method, comprising:
operating a ferroelectric memory cell of a memory array in a volatile mode;
initiating a first command to switch the ferroelectric memory cell from the volatile mode to a non-volatile mode;
sensing, based at least in part on the first command, a first logic state of the ferroelectric memory cell based at least in part on a signal from a ferroelectric capacitor of the ferroelectric memory cell;
switching the ferroelectric memory cell from the volatile mode to the non-volatile mode based at least in part on sensing the first logic state;
storing the first logic state in the ferroelectric capacitor of the ferroelectric memory cell after switching the ferroelectric memory cell from the volatile mode to the non-volatile mode; and
operating the ferroelectric memory cell in the non-volatile mode based at least in part on the first command.
17. The method of claim 1 , further comprising:
connecting the ferroelectric memory cell with a first switch based at least in part on the first command, wherein operating the ferroelectric memory cell in the non-volatile mode is based at least in part on connecting the ferroelectric memory cell with the first switch.