Degradation signaling for a memory device

1. A method comprising:

monitoring, at a memory device having a memory array, a threshold voltage of one or more simulation transistors of the memory device that are included in sensing circuitry or decoding circuitry for accessing the memory array, wherein the one or more simulation transistors of the memory device are configured to simulate a degradation of one or more other components of the memory device;

identifying, at the memory device, a change of the threshold voltage of the one or more simulation transistors included in the sensing circuitry or the decoding circuitry for accessing the memory array based at least in part on monitoring the one or more simulation transistors, wherein identifying the change of the threshold voltage of the one or more simulation transistors comprises comparing an operational characteristic of the one or more simulation transistors to an operational characteristic of a reference component of the memory device; and

signaling, by the memory device and to a host device, an indication of a degradation of the sensing circuitry or the decoding circuitry for accessing the memory array based at least in part on the identifying, wherein the memory array is accessible after the signaling.

2. The method of claim 1 , further comprising:

determining that the monitored threshold voltage satisfies a threshold, wherein the signaling is initiated based at least in part on the determining.

3. The method of claim 1 , further comprising:

activating the one or more simulation transistors of the memory device that are configured to simulate the degradation based at least in part on a row of memory cells within the memory device being accessed.

4. The method of claim 1 , further comprising:

activating the one or more simulation transistors of the memory device that are configured to simulate the degradation based at least in part on a delay-locked loop within the memory device being in a standby mode.

5. The method of claim 1 , further comprising:

activating the one or more simulation transistors of the memory device that are configured to simulate the degradation based at least in part on a component of a clock tree within the memory device being in a standby mode.

6. The method of claim 1 , wherein monitoring the threshold voltage comprises:

monitoring a transistor of the memory device that is used for accessing a row of memory cells of the memory device or for generating a clock signal for the memory device.

7. The method of claim 1 , further comprising:

receiving, from the host device, a request for degradation information associated with the threshold voltage, wherein signaling the indication of the degradation of the sensing circuitry or the decoding circuitry of the memory device is based at least in part on receiving the request for the degradation information.

8. The method of claim 1 , wherein the one or more other components comprise one or more transistors of the memory device, a delay-locked loop associated with the memory device, a clock tree of the memory device, or a combination thereof.

9. An apparatus comprising:

a memory device having a memory array comprising a plurality of memory cells; and

circuitry configured to:

monitor a threshold voltage of one or more simulation transistors of the memory device that are included in sensing circuitry or decoding circuitry for accessing the memory array, wherein the one or more simulation transistors of the memory device are configured to simulate a degradation of one or more other components of the memory device;

identify, a change of the threshold voltage of the one or more simulation transistors included in the sensing circuitry or the decoding circuitry for accessing the memory array based at least in part on monitoring the one or more simulation transistors, and based at least in part on comparing an operational characteristic of the one or more simulation transistors to an operational characteristic of a reference component of the memory device; and

signal, to a host device, an indication of a degradation of the sensing circuitry or the decoding circuitry for accessing the memory array based at least in part on the identifying, wherein the memory array is accessible after the signaling.

10. The apparatus of claim 9 , wherein the one or more simulation transistors of the memory device that are configured to simulate the degradation is configured to simulate a channel hot carrier (CHC) degradation of the memory device or a negative bias temperature instability (NBTI) degradation of the memory device.

11. The apparatus of claim 9 , wherein the one or more simulation transistors of the memory device that are configured to simulate the degradation are associated with a ring oscillator.

12. The apparatus of claim 11 , wherein, to monitor the threshold voltage, the circuitry is configured to:

compare an operation of the ring oscillator to a second operation of a second ring oscillator.

13. The apparatus of claim 11 , wherein the circuitry is configured to:

activate the ring oscillator based at least in part on a row of memory cells within the memory device being accessed.

14. The apparatus of claim 11 , wherein the circuitry is configured to:

activate the ring oscillator based at least in part on a delay-locked loop within the memory device being operated in a standby mode or a clock tree within the memory device being operated in a standby mode.

15. The apparatus of claim 9 , further comprising:

a storage component of the memory device configured to store a result of the identifying.

16. The apparatus of claim 9 , wherein the circuitry is further configured to:

receive, from the host device, a request for degradation information associated with the threshold voltage, wherein signaling the indication of the degradation of the sensing circuitry or the decoding circuitry of the memory device is based at least in part on receiving the request for the degradation information.

17. A method comprising:

receiving, at a host device, signaling from a memory device indicative of a threshold voltage of one or more simulation transistors of the memory device that are external to a memory array of the memory device and that are included in sensing circuitry or decoding circuitry for accessing the memory array of the memory device, wherein the signaling indicates a degradation of one or more other components of the memory device;

identifying, at the host device and based at least in part on receiving the signaling, that the threshold voltage of the one or more simulation transistors included in the sensing circuitry or the decoding circuitry for accessing the memory array has changed, wherein identifying that the threshold voltage of the one or more simulation transistors included in the sensing circuitry or the decoding circuitry for accessing the memory array has changed comprises comparing an operational characteristic of the one or more simulation transistors to an operational characteristic of a reference component of the memory device;

generating, at the host device, an indication associated with a degradation of the sensing circuitry or the decoding circuitry for accessing the memory array based at least in part on the identifying; and

performing one or more access operations on the memory array based at least in part on generating the indication associated with the degradation of the sensing circuitry or the decoding circuitry.

18. The method of claim 17 , further comprising:

transmitting, to the memory device, a request for degradation information associated with the threshold voltage, wherein receiving the signaling from the memory device is based at least in part on transmitting the request for the degradation information.