Apparatuses, circuits, and methods for biasing signal lines
View Patent ↗Apparatuses, circuits, and methods are disclosed for biasing signal lines in a memory array. In one such example the memory array includes a signal line coupled to a plurality of memory cells and is configured to provide access to the plurality of memory cells responsive to a biasing condition of the signal line. The memory array also includes a signal line driver coupled to the signal line, the signal line driver configured to provide a biasing signal to the signal line and to provide a preemphasis in the biasing signal responsive to a control signal. The control signal is responsive to an operating condition.
1. An apparatus, comprising:
a memory array comprising an access line driver coupled to at least one access line of a plurality of access lines; and
a microcontroller configured to calculate a biasing signal, wherein the biasing signal is preemphasized according to a model of the at least one access line as a resistance-capacitance (RC) network.
2. The apparatus of claim 1 , wherein the microcontroller is coupled to the access line driver, and wherein the microcontroller is configured to calculate the biasing signal based at least in part on an operating condition of the memory array.
3. The apparatus of claim 2 , wherein the microcontroller is configured to model the at least one access line as a lumped RC network or a distributed RC network to calculate the biasing signal.
4. The apparatus of claim 2 , wherein the operation condition corresponds to a power condition of the memory array or a temperature condition of the memory array.
5. The apparatus of claim 1 , further comprising:
a plurality of access line drivers including the access line driver; and
a plurality of microcontrollers including the microcontroller, each microcontroller coupled to a respective access line drivers of the plurality of access line drivers.
6. The apparatus of claim 5 , wherein each microcontroller of the plurality of microcontrollers is configured to calculate a respective biasing signal.
7. The apparatus of claim 1 , wherein the access line driver is configured to provide the biasing signal to the at least one access line.
8. The apparatus of claim 1 , wherein the at least one access line comprises a word line and the access line driver corresponds to a row decoder.
9. The apparatus of claim 1 , wherein the at least one access line comprises a bit line and the access line driver corresponds to a column decoder.
10. An apparatus, comprising:
a memory array comprising an access line; and
a microcontroller configured to provide, to the memory array, a biasing signal that is preemphasized according to a model of the access line as a resistance-capacitance (RC) network.
11. The apparatus of claim 10 , wherein the RC network corresponds to at least one of a lumped RC network, a concentrated RC network, or a distributed RC network.
12. The apparatus of claim 10 , further comprising:
an access line driver coupled to the access line of the memory array, wherein the access line driver is configured to provide the biasing signal to the access line.
13. The apparatus of claim 12 , where the microcontroller is coupled to the access line driver, and wherein the microcontroller is further configured to control the access line driver to preemphasize the biasing signal according to a model of the access line as the RC network.
14. The apparatus of claim 10 , wherein the microcontroller is further configured to calculate electrical parameters of the RC network.
15. The apparatus of claim 14 , wherein the electrical parameters comprise a calculated resistance or a calculated capacitance.
16. The apparatus of claim 10 , wherein the microcontroller is further configured to calculate the biasing signal based partly on an operating condition of the memory array.
17. The apparatus of claim 16 , wherein the operating condition of the memory array is determined during calibration of the memory array.
18. The apparatus of claim 16 , wherein the operating condition comprises a power constraint of the memory array, wherein the power constraint of the memory array corresponds to at least one of a sleep mode, a low power mode, or an operation of the memory array with a drained battery.
19. The apparatus of claim 16 , wherein a duration, magnitude, shape, or combinations thereof of the biasing signal is based on the operating condition of the memory array.
20. The apparatus of claim 16 , wherein the operating condition of the memory array corresponds to an address of a portion of the memory array that is to be operated on according to a command received at the microcontroller.