Memory cells having resistors and formation of the same
The present disclosure includes memory cells having resistors, and methods of forming the same. An example method includes forming a first conductive line, forming a second conductive line, and forming a memory element between the first conductive line and the second conductive line. Forming the memory element can include forming one or more memory materials, and forming a resistor in series with the one or more memory materials. The resistor can be configured to reduce a capacitive discharge through the memory element during a state transition of the memory element.
1. An array of memory cells, comprising:
a plurality of first conductive lines formed in a first direction;
a plurality of second conductive lines formed in a second direction; and
a plurality of memory cells located between the plurality of first conductive lines and the plurality of second conductive lines, each one of the plurality of memory cells comprising:
a memory element comprising one or more memory materials; and
a resistor, wherein the resistor is formed of a resistor material continuous across multiple memory cells of the plurality of memory cells such that the resistor is in contact with memory elements of multiple memory cells;
wherein the resistor comprises a first resistor, and wherein each one of the plurality of memory cells further comprises a second resistor, and wherein:
the first resistor is formed between the memory element and a respective one of the first conductive lines; and
the second resistor is formed between the memory element and a respective one of the second conductive lines.
2. The array of claim 1 , wherein the resistor is formed in direct contact with a respective one of the plurality of first conductive lines such that the resistor is continuous across multiple memory cells coupled to the respective first conductive line.
3. The array of claim 2 , wherein each one of the plurality of cells memory cells further comprises an electrode between the resistor and the respective one of the plurality of first conductive lines.
4. The array of claim 1 , wherein at least one of the first resistor and the second resistor has a resistivity of at least 300×10 −6 Ohm*cm.
5. The array of claim 1 , wherein the second resistor is isolated such that it is not continuous across multiple memory cells of the plurality of memory cells.
6. The array of claim 1 , wherein the resistor is configured to reduce a capacitive discharge through the memory element during a state transition the memory element.
7. The array of claim 1 , wherein the resistor is a vertical resistor.
8. The array of claim 1 , wherein the one or more memory materials comprises a single memory material serving as both a storage element and a switch element.
9. The array of claim 1 , wherein the one or more memory materials comprises a first memory material serving as a storage element of the memory element and a second memory material serving as a switch element of the memory element.
10. A method of forming a memory cell, comprising:
forming a plurality of first conductive lines in a first direction;
forming a plurality of second conductive lines in a second direction;
forming a plurality of memory cells between the plurality of first conductive lines and the plurality of second conductive lines, each one of the plurality of memory cells comprising:
a memory element comprising one or more memory materials; and
a resistor, wherein the resistor is formed of a resistor material continuous across multiple memory cells of the plurality of memory cells such that the resistor is in contact with memory elements of multiple memory cells;
wherein:
forming the plurality of first conductive lines in the first direction comprises forming a first conductive material; and
forming the plurality of memory cells between the plurality of first conductive lines and the plurality of second conductive lines comprises forming a resistor material on the first conductive material;
wherein the method includes:
performing a first etch through a stack comprising the first conductive material and the resistor material such that a respective plurality of resistor material lines are defined along with the plurality of first conductive lines through the first etch.
11. The method of claim 10 , wherein forming the plurality of second conductive lines in the second direction comprises forming a second conductive material, and wherein the method further includes:
forming, subsequent to performing the first etch, the second conductive material on the one or more memory element materials; and
performing a second etch through the second conductive material to define the plurality of second conductive lines, wherein the second etch stops on the plurality of resistor material lines such that the plurality of resistor materials are continuous in the first direction.
12. The method of claim 10 , wherein forming the plurality of second conductive lines in the second direction comprises forming a second conductive material, and wherein the method further includes:
forming, subsequent to performing the first etch, the second conductive material on the one or more memory element materials; and
performing a second etch through the second conductive material to define the plurality of second conductive lines, wherein the second etch stops on the plurality of resistor material lines such that the plurality of resistor material lines are continuous in the first direction.
13. An array of memory cells, comprising:
a plurality of first conductive lines formed in a first direction;
a plurality of second conductive lines formed in a second direction; and
a plurality of memory cells located between the plurality of first conductive lines and the plurality of second conductive lines, each one of the plurality of memory cells comprising:
a memory element comprising one or more memory materials; and
a resistor, wherein:
the resistor is formed in at least one of the first and the second directions and in contact with memory elements of multiple memory cells; and
the resistor is configured to reduce a capacitive discharge through the memory element during a state transition of the memory element;
wherein:
the resistor is a vertical resistor that is in contact with a respective one of the first conductive lines via a first surface and with the memory element via a second surface; and
a surface area of the first surface is greater than a surface area of the second surface.
14. The array claim 13 , wherein the memory element further comprises:
a first electrode material formed between a first surface of the memory element and a respective one of the plurality of resistors; and
a second electrode material formed between a second surface of the memory element and a respective one of the plurality of second conductive lines.
15. The array claim 13 , wherein the resistor is one of a plurality of resistors formed in the first direction, and wherein the resistor in direct contact with the a respective one of the plurality of first conductive lines such that the first resistor is continuous along the first direction.
16. An array of memory cells, comprising:
a plurality of first conductive lines formed in a first direction;
a plurality of second conductive lines formed in a second direction; and
a plurality of memory cells located between the plurality of first conductive lines and the plurality of second conductive lines, each one of the plurality of memory cells comprising:
a memory element comprising one or more memory materials; and
a resistor, wherein the resistor is formed of a resistor material continuous across multiple memory cells of the plurality of memory cells such that the resistor is in contact with memory elements of multiple memory cells;
wherein the one or more memory materials comprises a single memory material serving as both a storage element and a switch element.
17. An array of memory cells, comprising:
a plurality of first conductive lines formed in a first direction;
a plurality of second conductive lines formed in a second direction; and
a plurality of memory cells located between the plurality of first conductive lines and the plurality of second conductive lines, each one of the plurality of memory cells comprising:
a memory element comprising one or more memory materials; and
a resistor, wherein the resistor is formed of a resistor material continuous across multiple memory cells of the plurality of memory cells such that the resistor is in contact with memory elements of multiple memory cells;
wherein the one or more memory materials comprises a first memory material serving as a storage element of the memory element and a second memory material serving as a switch element of the memory element.
18. A method of forming a memory cell, comprising:
forming a plurality of first conductive lines in a first direction;
forming a plurality of second conductive lines in a second direction;
forming a plurality of memory cells between the plurality of first conductive lines and the plurality of second conductive lines, each one of the plurality of memory cells comprising:
a memory element comprising one or more memory materials; and
a resistor, wherein the resistor is formed of a resistor material continuous across multiple memory cells of the plurality of memory cells such that the resistor is in contact with memory elements of multiple memory cells;
wherein forming the plurality of memory cells between the plurality of first conductive lines in the first direction comprises forming a plurality of vertical resistors between the plurality of first conductive lines and the one or more memory element materials, wherein the method includes:
forming a first dielectric material on the first conductive line material;
forming a plurality of trenches in the first dielectric material extending in the second direction;
forming the resistor material in the plurality of trenches such that a portion of the resistor material is formed in the plurality of trenches; and
performing an etch through the portion of the resistor material formed in the plurality of trenches to form a respective plurality of resistor material lines extending in the second direction.
19. The method of claim 18 wherein the method includes filling, subsequent to performing the etch through the portion of the resistor material, each of the plurality of trenches with a second dielectric material such that the one or more memory element materials are in contact with the first dielectric material, the plurality of resistor material lines, and the second dielectric material.