Methods of forming a semiconductor device using block copolymer materials

1. A method of forming a semiconductor device, comprising:

annealing a block copolymer material while applying a non-preferentially wetting material to a surface of the block copolymer material to form a self-assembled block copolymer material adjacent to a material, the block copolymer material comprising polymer blocks;

crosslinking one polymer block of the self-assembled block copolymer material to form crosslinked portions of the self-assembled block copolymer material;

removing non-crosslinked portions of the self-assembled block copolymer material to form openings in the self-assembled block copolymer material; and

removing at least a portion of the material adjacent to the self-assembled block copolymer material through the openings in the self-assembled block copolymer material to form openings in the material adjacent to the self-assembled block copolymer at a diameter of from about 25 nm to about 100 nm.

2. The method of claim 1 , further comprising filling the openings in the material adjacent to the self-assembled block copolymer with a fill material.

3. The method of claim 1 , further comprising removing the cross-linked portions of the self-assembled block copolymer material.

4. The method of claim 1 , further comprising removing the self-assembled block copolymer material.

5. A method of forming a semiconductor device, comprising:

forming a block copolymer material within a trench, the trench having a width of from 1.7 times an L value of the block copolymer to about 2 times the L value of the block copolymer;

annealing the block copolymer material within the trench and adjacent to a non-preferentially wetting material to self-assemble polymer blocks of the block copolymer material and form a self-assembled block copolymer material comprising cylindrical domains of one polymer block in a matrix of another polymer block adjacent the non-preferentially wetting material;

crosslinking the cylindrical domains of the one polymer block of the self-assembled block copolymer material;

removing the crosslinked cylindrical domains of the self-assembled block copolymer material to form openings in the self-assembled block copolymer material; and

removing at least a portion of a material underlying the self-assembled block copolymer material through the openings.

6. The method of claim 5 , wherein annealing the block copolymer material comprises thermally annealing the block copolymer material comprising a cylindrical-phase block copolymer material.

7. The method of claim 5 , wherein crosslinking the cylindrical domains of the one polymer block of the self-assembled block copolymer material comprises exposing the one polymer block to radiation.

8. The method of claim 5 , wherein removing at least a portion of a material underlying the self-assembled block copolymer material through the openings comprises forming openings in the underlying material.

9. The method of claim 8 , further comprising forming a conductive material in the openings in the underlying material.

10. The method of claim 9 , wherein forming a conductive material in the openings in the underlying material comprises forming contacts in the openings in the underlying material.

11. The method of claim 8 , further comprising forming capacitors in the openings in the underlying material.

12. The method of claim 11 , wherein forming capacitors in the openings in the underlying material comprises forming metal-insulator-metal stacks in the openings.

13. A method of forming a semiconductor device, comprising:

forming a block copolymer material within a trench, the trench having a width of from about 1.7 times an L value of the block copolymer to about 2 times the L value of the block copolymer;

annealing the block copolymer material within the trench and adjacent to a non-preferentially wetting material to self-assemble polymer blocks of the block copolymer material and form a self-assembled block copolymer material comprising domains of one polymer block in a matrix of another polymer block adjacent the non-preferentially wetting material;

removing the domains of the one polymer block to form openings in the self-assembled block copolymer material;

removing a portion of a material underlying the self-assembled block copolymer material through the openings; and

forming a material in openings in the material underlying the self-assembled block copolymer material.

14. The method of claim 13 , wherein annealing the block copolymer material comprises thermally annealing the block copolymer material.

15. The method of claim 13 , wherein annealing the block copolymer material comprises solvent annealing the block copolymer material.

16. The method of claim 13 , wherein annealing the block copolymer material comprises forming cylindrical domains of the one polymer block in the matrix of the another polymer block.

17. The method of claim 13 , wherein removing a portion of a material underlying the self-assembled block copolymer material through the openings comprises using the matrix of the another polymer block as a mask to form the openings in the material underlying the self-assembled block material.

18. The method of claim 13 , wherein forming a material in openings in the material underlying the self-assembled block copolymer material comprises forming a metal or metal alloy in the openings in the material underlying the self-assembled block copolymer material.

19. The method of claim 18 , wherein forming a metal or metal alloy in the openings in the material underlying the self-assembled block copolymer material comprises forming contacts comprising the metal or metal alloy to conductive lines in the material underlying the self-assembled block copolymer material.