Methods of forming one or more covered voids in a semiconductor substrate
Some embodiments include methods of forming voids within semiconductor constructions. In some embodiments the voids may be utilized as microstructures for distributing coolant, for guiding electromagnetic radiation, or for separation and/or characterization of materials. Some embodiments include constructions having micro-structures therein which correspond to voids, conduits, insulative structures, semiconductor structures or conductive structures.
1. Integrated circuitry comprising:
a semiconductor-on-insulator substrate having a mean outermost global surface; the substrate comprising monocrystalline silicon-containing material, an insulator over the monocrystalline silicon-containing material, and an elemental-form silicon-comprising material over the insulator;
a plurality of elongated cooling conduits running generally parallel the mean outermost global surface within the insulator, the conduits having opposing sidewalls that comprise the insulator that is over the monocrystalline silicon-containing material; and
cooling fluid within the cooling conduits.
2. The integrated circuitry of claim 1 wherein the cooling conduits have ceilings comprising the elemental-form silicon-comprising material.
3. The integrated circuitry of claim 1 wherein the insulator comprises silicon dioxide.
4. The integrated circuitry of claim 1 wherein the insulator comprises silicon nitride.
5. The integrated circuitry of claim 1 wherein the insulator comprises silicon dioxide and silicon nitride.
6. The integrated circuitry of claim 1 wherein the cooling fluid comprises liquid.
7. The integrated circuitry of claim 1 wherein the cooling fluid comprises gas.
8. The integrated circuitry of claim 1 wherein the cooling fluid comprises liquid and gas.