Multifunctional memory cells
The present disclosure includes multifunctional memory cells. A number of embodiments include a charge transport element having an oxygen-rich silicon oxynitride material, a volatile charge storage element configured to store a first charge transported through the charge transport element, and a non-volatile charge storage element configured to store a second charge transported through the charge transport element, wherein the non-volatile charge storage element includes a gallium nitride material.
1. An apparatus, comprising:
an array of memory cells, wherein each respective memory cell of the array includes:
a charge transport element; and
a charge storage element, wherein the charge storage element includes a number of alternating nitride materials and gallium nitride materials each configured to store a different charge transported through the charge storage element.
2. The apparatus of claim 1 , wherein the number of alternating nitride materials and gallium nitride materials each correspond to a different memory level.
3. The apparatus of claim 1 , wherein the number of alternating nitride materials and gallium nitride materials include:
a first nitride material adjacent the charge transport element;
a first gallium nitride material adjacent the first nitride material;
a second nitride material adjacent the first gallium nitride material; and
a second gallium nitride material adjacent the second nitride material.
4. The apparatus of claim 1 , wherein each respective memory cell of the array includes a charge blocking element configured to prevent leakage of each respective charge stored by the number of alternating nitride materials and gallium nitride materials.
5. The apparatus of claim 4 , wherein the charge blocking element includes:
a silicon-rich nitride material adjacent the charge storage element;
an aluminum oxide material adjacent the silicon-rich nitride material; and
a hafnium oxynitride material adjacent the aluminum oxide material.
6. The apparatus of claim 1 , wherein the charge transport element includes:
a first oxygen-rich silicon oxynitride material;
a second oxygen-rich silicon oxynitride material; and
a hafnium dioxide material between the first oxygen-rich silicon oxynitride material and the second oxygen-rich silicon oxynitride material.