Micro-hall effect devices for simultaneous current and temperature measurements for both high and low temperature environments
GaN/Al 0.20 Ga 0.80 N/GaN heterostructures Micro-Hall effect sensors providing simultaneous current and temperature detection over at least a best performance temperature range of −183° C. and 252° C.
1. A sensor comprising:
AlGaN/GaN heterostructures fabricated into a single micro-Hall effect sensor including a set of bias terminals including a first bias terminal and a second bias terminal and a set of Hall voltage terminals including a first Hall voltage terminal and a second Hall voltage terminal,
a bias applied across the set of bias terminals,
a simultaneous Hall voltage measured across the set of Hall voltage terminals, and
a simultaneous temperature measured between the set of bias terminals and the set of Hall voltage terminals.
2. The sensor of claim 1 wherein said sensor has at least a best performance temperature range of −183° C. (Degree Celsius) and 252° C.
3. The sensor of claim 1 wherein said sensor are linearly dependent on magnetic field and temperature throughout.
4. The sensor of claim 1 wherein said sensor has a high room temperature mobility for the related material, which is in the range of twelve hundred centimeters squared per volt second to twenty two hundred centimeters squared per volt second and results in a least a best performance magnetic field sensitivity of one hundred and thirteen volts per amp per temperature, which only decreased to eighty volts per amp per temperature at two hundred and two degrees celcius.
5. The sensor of claim 1 wherein said sensor has the ability to measure temperature while at the same time measuring B-field magnitudes.
6. The sensor of claim 1 wherein said sensor has the ability to decouple temperature and current signatures.
7. The sensor of claim 1 wherein said sensor has the ability to follow the Hall voltage-temperature relationship under constant magnetic field and bias.
8. The sensor of claim 1 wherein said sensor has a sensitivity between 30 microvolts per temperature and 60 microvolts per temperature at approximately twenty degrees celcius.
9. The sensor of claim 1 wherein offset voltage is related to the voltage drop between contacts and can be removed without turning off the field.
10. The sensor of claim 1 wherein said sensor allow for direct-current/alternating-current current detection while at the same time achieving circuit isolation.
11. The sensor of claim 1 wherein said sensor separate the offset voltage from the Hall voltage.
12. The sensor of claim 1 wherein said sensor measure temperature and current simultaneously.
13. The sensor of claim 1 wherein said sensor function as a pressure sensor.
14. The sensor of claim 1 wherein said sensor function as a simultaneous current, pressure, and temperature sensor.
15. The sensor of claim 1 wherein said sensor function a feedback system to protect or enhance electronic circuits or devices and inverters/convertors.
16. The sensor of claim 1 wherein said sensor separates the offset voltage from the Hall voltage using two distinct voltage measurements and their predetermined measurements as a function of temperature.
17. The sensor of claim 16 wherein removing the offset voltage allows for the simultaneous and simple measurement of both current and temperature.
18. A sensor comprising: GaN/Al 0.20 Ga 0.80 N/GaN fabricated into a single micro-Hall effect sensor including a set of bias terminals including a first bias terminal and a second bias terminal and a set of Hall voltage terminals including a first Hall voltage terminal and a second Hall voltage terminal,
a bias applied across the set of bias terminals,
a simultaneous Hall voltage measured across the set of Hall voltage terminals, and
a simultaneous temperature measured between the set of bias terminals and the set of Hall voltage terminals.
19. The sensor of claim 18 wherein said sensor has at least a best performance temperature range of −183° C. (Degree Celsius) and 252° C.
20. The sensor of claim 18 wherein said sensor are linearly dependent on magnetic field and temperature throughout.
21. The sensor of claim 18 wherein said sensor has a high room temperature mobility for the related material, which is in the range of twelve hundred centimeters squared per volt second to twenty two hundred centimeters squared per volt second and results in a least a best performance magnetic field sensitivity of one hundred and thirteen volts per amp per temperature, which only decreased to eighty volts per amp per temperature at two hundred and two degrees celcius.
22. The sensor claim 18 wherein said sensor has the ability to measure temperature while at the same time measuring B-field magnitudes.
23. The sensor of claim 18 wherein said sensor has the ability to decouple temperature and current signatures.
24. The sensor of claim 18 wherein said sensor has the ability to follow the Hall voltage-temperature relationship under constant magnetic field and bias.
25. The sensor of claim 18 wherein said sensor has a sensitivity between thirty microvolts per temperature and sixty microvolts per temperature at approximately twenty degrees celcius.
26. The sensor of claim 18 wherein offset voltage is related to the voltage drop between contacts and can be removed without turning off the field.
27. The sensor of claim 18 wherein said sensor allow for direct-current/alternating-current current detection while at the same time achieving circuit isolation.
28. The sensor of claim 18 wherein said sensor separate the offset voltage from the Hall voltage.
29. The sensor of claim 18 wherein said sensor function as a pressure sensor.
30. The sensor of claim 18 wherein said sensor function as a simultaneous current, pressure, and temperature sensor.
31. The sensor of claim 18 wherein said sensor function a feedback system to protect or enhance electronic circuits or devices and inverter/convertors.
32. The sensor of claim 18 wherein said sensor separates the offset voltage from the Hall voltage using two distinct voltage measurements and their predetermined measurements as a function of temperature.
33. The sensor of claim 26 wherein removing the offset voltage allows for the simultaneous and simple measurement of both current and temperature.