Conductive paste composition and semiconductor devices made therewith

1. A paste composition, comprising:

an inorganic solids portion that comprises:

(a) 85 to 99.75% by weight of the solids of a source of electrically conductive metal, and

(b) 0.25 to 8% by weight of the solids of an oxide-based component comprising a first fusible material and a separate second fusible material, and

an organic vehicle in which the constituents of the inorganic solids portion are dispersed,

and wherein the first fusible material is one of a lead-tellurium-oxide (Pb—Te—O) composition, a lead-tellurium-boron-oxide (Pb—Te—B—O) composition, a lead-tellurium-lithium-oxide (Pb—Te—Li—O) composition, or a mixture thereof and the second fusible material is a bismuth-silicon-oxide that comprises, by weight percent:

30 to 80% Bi 2 O 3 ,

1 to 50% SiO 2 ,

0 to 40% ZnO,

0 to 22% TeO 2 ,

0 to 12% B 2 O 3 ,

0 to 6% MgO,

0 to 9% CaO,

0 to 15% BaO,

0 to 7% Al 2 O 3 ,

0 to 12% Na 2 O,

0 to 8% Li 2 O, and

0 to 4% Fe 2 O 3 .

2. The paste composition of claim 1 , wherein the electrically conductive metal comprises silver.

3. The paste composition of claim 1 , wherein the first fusible material comprises:

30 to 65 wt % PbO, and

30 to 65 wt % TeO 2 .

4. The paste composition of claim 1 , wherein the first fusible material further comprises 5-18 wt % Bi 2 O 3 .

5. The paste composition of claim 1 , wherein the first fusible material is substantially silicon-free.

6. The paste composition of claim 1 , wherein the second fusible material is substantially boron-free.

7. The paste composition of claim 1 , wherein the second fusible material is substantially tellurium-free.

8. The paste composition of claim 1 , wherein the second fusible material is at most about 40% by weight of the oxide-based component.

9. The paste composition of claim 1 , wherein the first and second fusible materials respectively have first and second glass transition temperatures (T g1 ,T g2 ) and a difference ΔT g =T g2 −T g1 is at least 100° C.

10. The paste composition of claim 1 , wherein the first and second fusible materials respectively have first and second softening points (T s1 ,T s2 ) and a difference ΔT s =T s2 −T s1 is at least 100° C.

11. The paste composition of claim 1 , wherein the first fusible material is substantially free of silicon and the second fusible material is substantially free of boron.

12. A process comprising:

(a) providing a semiconductor substrate comprising an insulating layer situated on at least one surface of the semiconductor substrate;

(b) applying a paste composition as recited by claim 1 onto at least a portion of the insulating layer, and

(c) firing the semiconductor substrate, the insulating layer, and the paste composition, such that the insulating layer is penetrated and the electrically conductive metal is sintered, whereby an electrode that electrically contacts the semiconductor substrate is formed.

13. An article made by a process comprising:

(a) providing a semiconductor substrate comprising an insulating layer situated on at least one surface of the semiconductor substrate;

(b) applying a paste composition as recited by claim 1 onto at least a portion of the insulating layer, and

(c) firing the semiconductor substrate, the insulating layer, and the paste composition, such that the insulating layer is penetrated and the electrically conductive metal is sintered, whereby an electrode that electrically contacts the semiconductor substrate is formed.

14. A paste composition, comprising:

an inorganic solids portion that comprises:

(a) 85 to 99.75% by weight of a source of electrically conductive metal, and

(b) 0.25 to 8% by weight of an oxide-based component comprising a first fusible material having a first glass transition temperature (T g1 ) and a first softening point (T s1 ), and a separate second fusible material having a second glass transition temperature (T g2 ) and a second softening point (T s2 ), T g2 being higher than T g1 and T s2 being higher than T s1 , and

an organic vehicle in which the constituents of the inorganic solids portion are dispersed.

15. The paste composition of claim 14 , wherein a difference ΔT g =T g2 −T g1 is at least 100° C.

16. The paste composition of claim 15 , wherein the difference ΔT g is at least 200° C.

17. The paste composition of claim 14 , wherein a difference ΔT s =T s2 −T s1 is at least 100° C.

18. The paste composition of claim 17 , wherein a difference ΔT g =T g2 −T g1 is at least 100° C.

19. The paste composition of claim 17 , wherein the difference ΔT s is at least 200° C.

20. The paste composition of claim 14 , wherein:

(a) the first fusible material is one of a lead-tellurium-oxide (Pb—Te—O) composition, a lead-tellurium-boron-oxide (Pb—Te—B—O) composition, or a lead-tellurium-lithium-oxide (Pb—Te—Li—O) composition; and

(b) the second fusible material is a bismuth-silicon-oxide that comprises, by weight percent:

30 to 80% Bi 2 O 3 ,

1 to 50% SiO 2 ,

0 to 40% ZnO,

0 to 22% TeO 2 ,

0 to 12% B 2 O 3 ,

0 to 6% MgO,

0 to 9% CaO,

0 to 15% BaO,

0 to 7% Al 2 O 3 ,

0 to 12% Na 2 O,

0 to 8% Li 2 O, and

0 to 4% Fe 2 O 3 .

21. A process comprising:

(a) providing a semiconductor substrate comprising an insulating layer situated on at least one surface of the semiconductor substrate;

(b) applying a paste composition as recited by claim 14 onto at least a portion of the insulating layer, and

(c) firing the semiconductor substrate, the insulating layer, and the paste composition, such that the insulating layer is penetrated and the electrically conductive metal is sintered, whereby an electrode that electrically contacts the semiconductor substrate is formed.

22. An article made by a process comprising:

(a) providing a semiconductor substrate comprising an insulating layer situated on at least one surface of the semiconductor substrate;

(b) applying a paste composition as recited by claim 14 onto at least a portion of the insulating layer, and

(c) firing the semiconductor substrate, the insulating layer, and the paste composition, such that the insulating layer is penetrated and the electrically conductive metal is sintered, whereby an electrode that electrically contacts the semiconductor substrate is formed.

23. The paste composition of claim 14 , wherein the inorganic solids portion comprises 0.25 to 8% by weight of the oxide-based component.