ELECTROMAGNETIC INTERFERENCE SHIELDING STRUCTURE AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME
An electromagnetic interference shielding structure includes a base layer and an electromagnetic interference shielding layer disposed on the base layer. The electromagnetic shielding layer includes a plurality of porous conductor layers, each of the porous conductor layers has a plurality of openings, and the porous conductor layers are stacked on each other in a stacking direction. A semiconductor package includes the electromagnetic interference shielding structure.
1 . An electromagnetic interference shielding structure comprising:
a base layer; and
an electromagnetic interference shielding layer disposed on the base layer,
wherein the electromagnetic shielding layer includes a plurality of porous conductor layers,
each of the porous conductor layers has a plurality of openings, and
the porous conductor layers are stacked on each other in a stacking direction.
2 . The electromagnetic interference shielding structure of claim 1 , wherein at least portions of the plurality of openings of each of the porous conductor layers are connected to each other in the stacking direction to expose at least portions of a surface of the base layer.
3 . The electromagnetic interference shielding structure of claim 1 , wherein each of the porous conductor layers has a conductive mesh structure.
4 . The electromagnetic interference shielding structure of claim 3 , wherein each of the porous conductor layers contains self-aligned silver nanoparticles.
5 . The electromagnetic interference shielding structure of claim 3 , wherein the conductive mesh structure of one of the plurality of porous conductor layers and the conductive mesh structure of another of the plurality of porous conductor layers are partially offset from each other in the stacking direction.
6 . The electromagnetic interference shielding structure of claim 3 , wherein the conductive mesh structure of one of the plurality of porous conductor layers extends over one of plurality of openings of another of the plurality of porous conductor layers.
7 . The electromagnetic interference shielding structure of claim 1 , wherein the electromagnetic interference shielding layer further includes a metal film covering an outer surface of each of the porous conductor layers.
8 . The electromagnetic interference shielding structure of claim 7 , wherein the metal film contains copper.
9 . The electromagnetic interference shielding structure of claim 1 , wherein the plurality of openings of each of the plurality of porous conductor layers are randomly distributed.
10 . A semiconductor package comprising:
a connection member having redistribution layers;
a semiconductor chip disposed on a connection member and having an active surface on which connection pads electrically connected to the redistribution layers are disposed and an inactive surface opposing the active surface;
an encapsulant disposed on the connection member and encapsulating the semiconductor chip; and
an electromagnetic interference shielding layer disposed on the encapsulant,
wherein the electromagnetic shielding layer includes a plurality of porous conductor layers,
each of the porous conductor layers has a plurality of openings, and
the porous conductor layers are stacked on each other in a stacking direction.
11 . The semiconductor package of claim 10 , wherein at least portions of the plurality of openings of each of the porous conductor layers are connected to each other in the stacking direction to expose at least portions of a surface of the encapsulant.
12 . The semiconductor package of claim 10 , wherein each of the porous conductor layers has a conductive mesh structure.
13 . The semiconductor package of claim 12 , wherein each of the porous conductor layers contains self-aligned silver nanoparticles.
14 . The semiconductor package of claim 10 , wherein the electromagnetic interference shielding layer further includes a metal film covering an outer surface of each of the porous conductor layers.
15 . The semiconductor package of claim 14 , wherein the metal film contains copper.
16 . The semiconductor package of claim 10 , wherein the electromagnetic interference shielding layer covers an upper surface of the encapsulant.
17 . The semiconductor package of claim 16 , wherein the electromagnetic interference shielding layer also covers a side surface of the encapsulant and a side surface of the connection member.
18 . The semiconductor package of claim 10 , further comprising a core member disposed on the connection member and having a through-hole,
wherein the semiconductor chip is disposed in the through-hole of the core member.
19 . The semiconductor package of claim 18 , wherein the core member includes one or more wiring layers electrically connected to the connection pads of the semiconductor chip.
20 . The semiconductor package of claim 10 , wherein the plurality of openings of each of the plurality of porous conductor layers are randomly distributed.