Resistive random access memory device

1. A memory cell, comprising:

a resistive material layer comprising a first portion that extends along a first direction and a second portion that extends along a second direction, wherein the first and second directions are different from each other;

a first electrode coupled to a bottom surface of the first portion of the resistive material layer;

a second electrode coupled to the second portion of the resistive material layer, wherein each of the first and second electrodes extends along the first direction;

a first capping layer comprising at least a portion that is coupled between the first electrode and the first portion of the resistive material layer; and

a second capping layer comprising at least a portion that is coupled between the second portion of the resistive material layer and the second electrode.

2. The memory cell of claim 1 , wherein the first and second directions are substantially perpendicular to each other.

3. The memory cell of claim 1 , wherein the resistive material layer presents a variable resistance value.

4. The memory cell of claim 1 , wherein the first and second electrodes are in parallel to each other.

5. The memory cell of claim 1 , further comprising:

a transistor, wherein the second electrode is coupled to a drain feature or a source feature of the transistor.

6. The memory cell of claim 1 , wherein the portion of the first capping layer extends along the first direction, and the portion of the second capping layer extends along the second direction.

7. A memory device, comprising:

a first resistive material layer and a second resistive material layer that are laterally spaced from each other by a dielectric structure,

wherein the first and second resistive material layers each comprises a horizontal portion and a vertical portion, the vertical portions of the first and second resistive material layers each extends along a respective sidewall of the dielectric structure, and the horizontal portions of the first and second resistive material layers extend toward opposite directions;

a first electrode coupled to a bottom surface of the horizontal portions of the first and second resistive material layers;

a second electrode coupled to the vertical portion of the first resistive material layer, wherein the first resistive material layer, the first electrode, and the second electrode form a first resistive random access memory (RRAM) resistor; and

a third electrode coupled to the vertical portion of the second resistive material layer, wherein the second resistive material layer, the first electrode, and the third electrode form a second RRAM resistor.

8. The memory device of claim 7 , wherein the first, second, and third electrodes are in parallel to one another.

9. The memory device of claim 7 , wherein the second and third electrodes are isolated from each other by at least the dielectric structure.

10. The memory device of claim 7 , further comprising:

a first transistor, wherein the second electrode is coupled to a drain feature or a source feature of the first transistor; and

a second transistor, wherein the third electrode is coupled to a drain feature or a source feature of the second transistor.

11. The memory device of claim 7 , wherein the first RRAM resistor further comprises:

a first capping layer comprising at least a portion that is coupled between the first electrode and the horizontal portion of the first resistive material layer; and

a second capping layer comprising at least a portion that is coupled between the vertical portion of the first resistive material layer and the second electrode.

12. The memory device of claim 7 , wherein the second RRAM resistor further comprises:

a first capping layer comprising at least a portion that is coupled between the first electrode and the horizontal portion of the second resistive material layer; and

a second capping layer comprising at least a portion that is coupled between the vertical portion of the second resistive material layer and the third electrode.

13. The memory device of claim 7 , wherein the first and second resistive material layers each presents a respective variable resistance value.

14. A memory device, comprising:

a plurality of dielectric structures laterally spaced from one another;

a plurality of pairs, each pair comprising first and second resistive material layers, wherein

the first and second resistive material layers of each of the plurality of pairs are mirror-symmetric over one of the plurality of dielectric structures,

respective vertical portions of the first and second resistive material layers each extends along a sidewall of the one of the plurality of dielectric structures, and

respective horizontal portions of the first and second resistive material layers each extends away from the one of the plurality of dielectric structures; and

a common lower electrode that is shared by the plurality of pairs and is coupled to the respective horizontal portions of the first and second resistive material layers of each of the plurality of pairs.

15. The memory device of claim 14 , wherein the common lower electrode is in parallel with the respective horizontal portions of the first and second resistive material layers of each of the plurality of pairs.

16. The memory device of claim 14 , wherein the respective vertical portions of the first and second resistive material layers of each of the plurality of pairs are coupled to respective different upper electrodes, and the respective different upper electrodes are in parallel with the respective horizontal portions of the first and second resistive material layers of each of the plurality of pairs.

17. The memory device of claim 14 , wherein the first and second resistive material layers of each of the plurality of pairs each presents a respective variable resistance value.