Electronic assemblies having a mesh bond material and methods of forming thereof

1. A method of forming an electronic assembly with a mesh bond layer, the method comprising:

forming a mesh bond material comprising a first surface spaced apart from a second surface by a thickness of the mesh bond material and one or more openings extending from the first surface through the thickness of the mesh bond material to the second surface;

adjusting at least one of: a geometry of the one or more openings and a size of the one or more openings of the mesh bond material, wherein the adjusting modifies a yield point of a Young's modulus of the mesh bond material such that the mesh bond material operates in an elastic region when assembled in the electronics assembly; and

bonding the first surface of the mesh bond material to a surface of a semiconductor device.

2. The method of claim 1 , further comprising bonding the second surface of the mesh bond material to a surface of a substrate.

3. The method of claim 1 , further comprising coating the mesh bond material with a layer of Sn to facilitate bonding with the semiconductor device.

4. The method of claim 1 , wherein adjusting comprises increasing the size of the one or more openings of the mesh bond material to decrease the Young's modulus of the mesh bond material.

5. The method of claim 1 , wherein the mesh bond material comprises a first metal encased as a core within a second metal, the first metal exhibiting a first Young's modulus, and the second metal exhibiting a second Young's modulus, wherein the first Young's modulus is less than the second Young's modulus.

6. The method of claim 1 , wherein the mesh bond material comprises a first metal positioned between layers of a second metal, the first metal exhibiting a first Young's modulus, the second metal exhibiting a second Young's modulus, and wherein the first Young's modulus is less than the second Young's modulus.

7. A method of forming an electronic assembly having a mesh bond layer, the method comprising:

forming a composite mesh bond material comprising a first metal adjacent a second metal, the composite mesh bond material comprising a first surface spaced apart from a second surface by a thickness of the composite mesh bond material and one or more openings extending from the first surface through the thickness of the composite mesh bond material to the second surface;

modifying the composite mesh bond material such that the composite mesh bond material exhibiting a first composite Young's modulus is adjusted to a second composite Young's modulus, wherein the first composite Young's modulus is different than the second composite Young's modulus and modifying the composite mesh bond material includes adjusting at least one of: a geometry of the one or more openings and a size of the one or more openings of the composite mesh bond material, wherein adjusting modifies a yield point of a Young's modulus of the mesh bond material such that the mesh bond material operates in an elastic region when assembled in the electronics assembly; and

bonding the first surface of the composite mesh bond material to a surface of a semiconductor device.

8. The method of claim 7 , further comprising bonding the second surface of the composite mesh bond material to a substrate.

9. The method of claim 7 , wherein modifying comprises increasing the size of the one or more openings of the composite mesh bond material to decrease the first composite Young's modulus of the composite mesh bond material.

10. The method of claim 7 , wherein the composite mesh bond material comprises the first metal encased as a core within the second metal, the first metal exhibiting a first Young's modulus, the second metal exhibiting a second Young's modulus, and the first Young's modulus is less than the second Young's modulus.

11. The method of claim 7 , wherein the composite mesh bond material comprises the first metal positioned between layers of the second metal, the first metal exhibiting a first Young's modulus, the second metal exhibiting a second Young's modulus, and the first Young's modulus is less than the second Young's modulus.

12. The method of claim 7 , wherein forming the composite mesh bond material includes electrodeposition of at least one metal of the composite mesh bond material.

13. An electronic assembly comprising:

a semiconductor device; and

a mesh bond layer bonded to the semiconductor device, wherein:

the mesh bond layer includes a mesh bond material having:

a first surface spaced apart by a thickness of material from a second surface opposite the first surface, and

one or more openings extending from the first surface through the thickness of material to the second surface, wherein at least one of a geometry of the one or more openings and a size of the one or more openings is adjusted to a yield point of a Young's modulus of the mesh bond layer such that the mesh bond layer operates in an elastic region when the electronic assembly is subjected to a predefined range of temperatures.

14. The electronic assembly of claim 13 , further comprising a substrate bonded to the second surface of the mesh bond layer.

15. The electronic assembly of claim 13 , wherein the predefined range of temperatures is about minus 50 degrees C. to about 300 degrees C.

16. The electronic assembly of claim 13 , wherein the mesh bond material further comprises a composite of materials, the composite of materials includes one or more layers of at least one of Cu, Au, and Ni.

17. The electronic assembly of claim 16 , wherein the composite of materials includes a layer of Cu or Au positioned between layers of Ni.

18. The electronic assembly of claim 16 , wherein the composite of materials includes a first material positioned as a core and a second material positioned as a cladding that encases the first material, and the first material exhibits a first Young's modulus, and the second material exhibits a second Young's modulus, wherein the first Young's modulus is less than the second Young's modulus.