IP Library › Granted Patent US 10,854,882
Granted Patent B2
US 10,854,882 · App. 16/165,064 · Granted Dec 1, 2020

Negative electrode for a lithium-ion electrochemical cell and method of forming same

Inventors: Ion C. Halalay (Grosse Pointe Park, MI); Raghunathan K (Troy, MI)
Assignee: GM Global Technology Operations LLC
H01M4/625H01M2/26H01M4/0404H01M4/0471H01M4/133H01M4/1393H01M4/626H01M4/661H01M10/0525H01M2004/027
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Quick Facts
Patent No.
US 10,854,882
App. No.
16/165,064
Granted
Dec 1, 2020
Kind
B2
Abstract

A method of forming an electrode includes attaching a tab to a collector to form a pre-tabbed current collector; disposing the pre-tabbed current collector onto a non-stick substrate to form a workpiece; and casting a slurry onto the workpiece to form a film. The slurry includes an active material component, one or more carbon additives, and at least one of a filamentary copper additive and a dendritic copper additive. The method includes drying the film at a first temperature to form a dried film; curing the dried film under pressure at a second higher temperature to form a cured film; removing the cured film from the non-stick substrate to form a precursor film; and carbonizing and annealing the precursor film at a third higher temperature. Carbonizing forms a three-dimensional electrically-conductive network and annealing forms a second contiguous network of copper connected to the active material component to form the electrode.

Claims (41)

1. A method of forming a negative electrode for a lithium-ion electrochemical cell, the method comprising:

attaching a tab formed from nickel to a current collector formed from a copper matrix to form a pre-tabbed current collector;

disposing the pre-tabbed current collector onto a non-stick substrate including polytetrafluoroethylene to form a workpiece;

casting a slurry onto the workpiece to form a film disposed on the pre-tabbed current collector, wherein the slurry includes:

an active material component;

one or more carbon additives; and

at least one of a filamentary copper additive and a dendritic copper additive;

drying the film at a first temperature to form a dried film;

curing the dried film under pressure at a second temperature that is higher than the first temperature to form a cured film;

removing the cured film from the non-stick substrate to form a precursor film; and

carbonizing and annealing the precursor film at a third temperature that is higher than the second temperature;

wherein carbonizing forms a three-dimensional electrically-conductive network and annealing forms a contiguous network of copper connected to the active material component to thereby form the negative electrode.

2. The method of claim 1 , further including annealing the three-dimensional electrically-conductive network at a fourth temperature that is higher than the third temperature.

3. The method of claim 1 , wherein annealing includes wicking molten copper through the three-dimensional electrically-conductive network.

4. The method of claim 1 , wherein the three-dimensional electrically-conductive network is a first contiguous network of carbon connected to the active material component.

5. The method of claim 1 , wherein attaching is prior to annealing.

6. The method of claim 5 , further including preserving a structural integrity of the tab.

7. The method of claim 1 , wherein disposing does not include supporting the pre-tabbed current collector on a metal foil.

8. The method of claim 1 , wherein drying includes heating the film to the first temperature of from 50° C. to 150° C.

9. The method of claim 8 , wherein drying further includes heating the film under a vacuum.

10. The method of claim 1 , wherein curing includes heating the dried film to the second temperature of from 200° C. to 400° C.

11. The method of claim 1 , wherein carbonizing includes heating the precursor film to the third temperature of from 600° C. to 900° C.

12. The method of claim 2 , wherein annealing includes heating the three-dimensional electrically-conductive network to the fourth temperature of from 900° C. to 1,300° C.

13. The method of claim 1 , wherein annealing includes removing native silicon dioxide from the three-dimensional electrically-conductive network.

14. The method of claim 1 , further including continuously casting the slurry, continuously drying the film, continuously curing the dried film, continuously removing the cured film, and continuously carbonizing and continuously annealing the precursor film.

15. A negative electrode for a lithium-ion electrochemical cell, the negative electrode comprising:

a pre-tabbed current collector including:

a current collector formed from a copper matrix; and

a tab attached to the current collector and formed from nickel; and

a cured composite material disposed on the pre-tabbed current collector and formed from a slurry including:

an active material component;

one or more carbon additives; and

at least one of a filamentary copper additive and a dendritic copper additive;

wherein the cured composite material includes:

a first contiguous network of carbon connected to the active material component; and

a second contiguous network of copper connected to the active material component.

16. The negative electrode of claim 15 , wherein the filamentary copper additive includes microfilament copper.

17. The negative electrode of claim 15 , wherein the dendritic copper additive includes dendritic copper powder.

18. The negative electrode of claim 15 , wherein the at least one of the filamentary copper additive and the dendritic copper additive is present in the slurry in an amount of from 5 parts by weight to 50 parts by weight based on 100 parts by weight of the slurry.

19. A lithium-ion electrochemical cell comprising the negative electrode of claim 15 ; a positive electrode spaced apart from the negative electrode; and an electrolyte solution-filled separator disposed between the positive electrode and the negative electrode.

20. A device comprising the lithium-ion electrochemical cell of claim 19 .

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 19, 2018
From: HALALAY, ION C.; K, RAGHUNATHAN
To: GM GLOBAL TECHNOLOGY OPERATIONS LLC
Reel/Frame 047234/0414 →
Continuity (1)
Related Publication 20200127292A1 · Apr 23, 2020
Cited By (2)
US 12,573,634 US 12,725,832