Plasma processing apparatus and sample stage thereof
There is disclosed a plasma processing apparatus for processing a wafer put on a sample stage disposed in a processing chamber within a vacuum vessel by the use of a plasma generated in the processing chamber after mounting the wafer on the sample stage. The apparatus has heaters in areas of the interior of the sample stage which are divided radially and circumferentially. At least those of the heaters which are arranged in the areas located in the radially outer position include circumferentially arranged heater portions that are connected in series. The amounts of heat generated by these circumferentially arranged heater portions are adjusted.
1. A plasma processing method comprising the steps of:
mounting a wafer to be processed on an upper surface of a sample stage which is disposed in a processing chamber inside a vacuum vessel;
generating a plasma inside the processing chamber; and
adjusting a temperature of the wafer in a predetermined permissible range using at least one of heater units which is disposed inside a dielectric film constituting the upper surface of the sample stage and configured to generate heat,
wherein the at least one of heater units is comprised of a plurality of arcuate portions which are arranged in a ring-shape so as to surround a central region of the dielectric film and connected in series inside the dielectric film, and the at least one of heater units is supplied DC power from a DC power supply, wherein each of the plurality of arcuate portions constituting a circuit arranged in a ring-shape is connected to an adjacent arcuate portion by each of a plurality of connection portions and has a same length forming a same circumferential angle around the central region, and each of the heater units disposed in each of the plurality of the ring-shaped regions constitutes a loop, and the arcuate portions disposed in one of the ring-shaped regions closer to the center region form a greater circumferential angle around the central region than those of the arcuate portions disposed in the ring-shaped region outwardly located, and
the step of adjusting the temperature of the wafer includes a step of adjusting amounts of DC current in each of the plurality of arcuate portion of the at least one of heater units supplied from the DC power supply.
2. The plasma processing method according to claim 1 , wherein
the step of adjusting the temperature of the wafer includes a step of adjusting an amount of DC current in each of the plurality of arcuate portions of the at least one of heater units by adjusting an amount of DC current supplied to each of a plurality of circuit elements which is arranged to be connected in parallel to corresponding one of the plurality of arcuate portions of the at least one of heater units.
3. The plasma processing method according to claim 1 , wherein
the step of adjusting the temperature of the wafer includes a step of adjusting the amount of DC current in each of the plurality of arcuate portions of the at least one of heater units so that an amount of the DC power supplied to the at least one of heater units can be maintained constant.
4. The plasma processing method according to claim 1 , wherein
two heater units are disposed at different positions adjacent to each other in a radial direction from the center of the dielectric film, and a number of the arcuate portions of one of the two heater units disposed inner side is less than a number of the arcuate portions of the other of the two heater units disposed outer side.
5. The plasma processing method according to claim 1 , wherein
two of the heater units are disposed at different positions adjacent to each other in a radial direction from the center of the dielectric film, a number of the arcuate portions of one of the two heater units disposed inner side is less than a number of the arcuate portions of the other of the two heater units disposed outer side, and the plurality of arcuate portions of each of the two heater units have an equal circumferential length or angle around a central region of the dielectric film.
6. The plasma processing method according to claim 1 , wherein
two heater units are disposed at different positions adjacent to each other in a radial direction from the center of the dielectric film, a number of the arcuate portions of one of the two heater units disposed inner side is less than a number of the arcuate portions of the other of the two heater units disposed outer side, and the plurality of arcuate portions of each of the two heater units have an equal circumferential length or angle around a central region of the dielectric film, and
the step of adjusting the temperature of the wafer includes a step of adjusting the amount of DC current in each of the plurality of arcuate portions in each of the two heater units so that an amount of the DC power supplied to the one of heater units can be maintained constant.
7. The plasma processing method according to claim 2 , wherein
two heater units are disposed at different positions adjacent to each other in a radial direction from the center of the dielectric film, a number of the arcuate portions of one of the two heater units disposed inner side is less than a number of the arcuate portions of the other of the two heater units disposed outer side, and the plurality of arcuate portions of each of the two heater units have an equal circumferential length or angle around a central region of the dielectric film, and
the step of adjusting the temperature of the wafer includes a step of adjusting the amount of DC current in each of the plurality of arcuate portions in each of the two heater units so that an amount of the DC power supplied to the one of heater units can be maintained constant.