Dynamic temperature compensation in a memory component
A dynamic temperature compensation trim for use in temperature compensating a memory operation on a memory call of a memory component. The dynamic temperature compensation trim is based on a temperature of the memory component and based on in-service data for the memory operation on the memory cell. A register for the memory operation is modified based on the dynamic temperature compensation trim.
1. A system, comprising:
a memory component having a register corresponding to a memory operation on a memory cell of the memory component; and
a processing device, operatively coupled with the memory component, to:
determine a dynamic temperature compensation trim for use in temperature compensating the memory operation, the determining of the dynamic temperature compensation trim being based on a temperature of the memory component and based on in-service data for the memory operation on the memory cell, and
modify the register based on the dynamic temperature compensation trim,
wherein the in-service data includes at least one of read level calibration data or program verify level calibration data, where the program verify level calibration data checks a write operation voltage level.
2. The system of claim 1 , wherein the processing device adjusts a gate voltage level applied to the memory cell based on the dynamic temperature compensation trim.
3. The system of claim 1 , wherein the register is modified based on the temperature of the memory component in response to the memory operation being performed.
4. The system of claim 1 , wherein the register is modified based on a predetermined change in the temperature of the memory component subsequent to a prior modification of the register.
5. The system of claim 1 , wherein the memory operation is one of a read operation or a program verify operation performed on the memory cell,
wherein the memory cell belongs to a word line group of the memory component, and
wherein the dynamic temperature compensation trim corresponds to memory cells of the word line group.
6. The system of claim 1 , wherein the dynamic temperature compensation trim is based on a temperature subrange selected from a plurality of temperature subranges,
wherein the selection of the temperature subrange is based on a temperature of the memory component, and
wherein the temperature subrange covers at least a portion of an operating temperature range of the memory component.
7. The system of claim 6 , wherein the dynamic temperature compensation trim for each temperature subrange is a predetermined value corresponding to a representative temperature within the respective temperature subrange.
8. A method, comprising:
determining a dynamic temperature compensation trim for use in temperature compensating a memory operation on a memory cell of a memory component, the determining of the dynamic temperature compensation trim based on a temperature of the memory component and based on in-service data for the memory operation on the memory cell; and
modifying a register corresponding to the memory operation on the memory cell based on the dynamic temperature compensation trim,
wherein the in-service data includes at least one of read level calibration data or program verify level calibration data, where the program verify level calibration data checks a write operation voltage level.
9. The method of claim 8 , further comprising:
adjusting a gate voltage level applied to the memory cell based on the dynamic temperature compensation trim.
10. The method of claim 8 , wherein the register is modified based on the temperature of the memory component each time the memory operation is performed.
11. The method of claim 8 , wherein the register is modified based on a predetermined change in the temperature of the memory component subsequent to a prior modification of the register.
12. The method of claim 8 , wherein the memory operation is one of a read operation or a program verify operation performed on the memory cell, wherein the memory cell belongs to a word line group of the memory component, and wherein the dynamic temperature compensation trim corresponds to memory cells of the word line group.
13. The method of claim 8 , wherein the dynamic temperature compensation trim is based on a temperature subrange selected from a plurality of temperature subranges,
wherein the selection of the temperature subrange is based on a temperature of the memory component, and
wherein the temperature subrange covers at least a portion of an operating temperature range of the memory component.
14. The method of claim 13 , wherein the dynamic temperature compensation trim for each temperature subrange is a predetermined value corresponding to a representative temperature within the respective temperature subrange.
15. A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device, cause the processing device to:
determine a dynamic temperature compensation trim for use in temperature compensating a memory operation on a memory cell of a memory component, the determining of the dynamic temperature compensation trim based on a temperature of the memory component and based on in-service data for the memory operation on the memory cell; and
modify a register corresponding to the memory operation on the memory cell based on the dynamic temperature compensation trim,
wherein the in-service data includes at least one of read level calibration data or program verify level calibration data, where the program verify level calibration data checks a write operation voltage level.
16. The non-transitory computer-readable storage medium of claim 15 , wherein the instructions further cause the processing device to:
adjust a gate voltage level applied to the memory cell based on the dynamic temperature compensation trim.
17. The non-transitory computer-readable storage medium of claim 15 , wherein the register is modified based on the temperature of the memory component each time the memory operation is performed.
18. The non-transitory computer-readable storage medium of claim 15 , wherein the register is modified based on a predetermined change in the temperature of the memory component subsequent to a prior modification of the register.
19. The non-transitory computer-readable storage medium of claim 15 , wherein the memory operation is one of a read operation or a program verify operation performed on the memory cell,
wherein the memory cell belongs to a word line group of the memory component, and
wherein the dynamic temperature compensation trim corresponds to memory cells of the word line group.
20. The non-transitory computer-readable storage medium of claim 15 , wherein the dynamic temperature compensation trim is based on a temperature subrange selected from a plurality of temperature subranges,
wherein the selection of the temperature subrange is based on a temperature of the memory component, and
wherein the temperature subrange covers at least a portion of an operating temperature range of the memory component.