Power semiconductor device and method of fabricating the same

1. A power semiconductor device comprising:

an epitaxial layer that constitutes a part of an active cell region and is doped with impurities of a first conductivity type at a first concentration;

a field stop region that is located below the epitaxial layer and doped with impurities of a first conductivity type at a second concentration which are then activated; and

a collector region that is located below the field stop region and doped with impurities of a second conductivity type,

wherein the field stop region is formed by repeatedly alternately arranging first regions in which the activation of the impurities of the first conductivity type is relatively strong and second regions in which the activation of the impurities of the first conductivity type is relatively weak, and

wherein the second regions are located on the collector region and adjacent second regions among the second regions are directly connected to each other on the collector region.

2. The device of claim 1 ,

wherein when the power semiconductor device is switched on, a hole current that passes through the second regions of the field stop region, in which the activation is relatively weak, is larger than a hole current that passes through the first regions of the field stop region, in which the activation relatively strong, and

wherein when the power semiconductor device is switched off, a current that passes through the first regions of the field stop region, in which the activation is relatively strong, is larger than a current that passes through the second regions of the field stop region, in which the activation is relatively weak.

3. The device of claim 1 ,

wherein the second concentration of the impurities of the first conductivity type in the field stop region is higher than the first concentration of the impurities of the first conductivity type in the epitaxial layer.

4. The device of claim 1 ,

wherein the first conductivity type and the second conductivity type have opposite conductivity types and are each one of p-type and n-type.

5. A method for fabricating a power semiconductor device, the method comprising:

forming an epitaxial layer that constitutes a part of an active cell region and is doped with impurities of a first conductivity type at a first concentration on a semiconductor wafer;

forming a gate structure on the epitaxial layer;

removing the semiconductor wafer except for a rim of the semiconductor wafer;

forming a field stop region by doping a lower portion of the epitaxial layer with impurities of a first conductivity type at a second concentration and by activating the impurities using a first laser annealing process; and

forming a collector region by doping a region of the lower portion of the epitaxial layer below the field stop region with impurities of a second conductivity type and by activating the impurities using a second laser annealing process,

wherein the first annealing process is performed such that regions in which the activation of the impurities of the first conductivity type and the second concentration is relatively strong and regions in which the activation of the impurities of the first conductivity type and the second concentration is relatively weak are repeatedly alternately arranged.

6. A method for fabricating a power semiconductor device, the method comprising:

forming an epitaxial layer that constitutes a part of an active cell region and is doped with impurities of a first conductivity type at a first concentration on a semiconductor wafer;

forming a gate structure on the epitaxial layer;

removing the semiconductor wafer except for a rim of the semiconductor wafer;

forming a collector region by doping a lower portion of the epitaxial layer with impurities of a second conductivity type and by activating the impurities using a second laser annealing process; and

forming a field stop region by doping the collector region in the lower portion of the epitaxial layer with impurities of a first conductivity type at a second concentration and by activating the impurities using a first laser annealing process,

wherein the first laser annealing process is performed such that regions in which the activation of the impurities of the first conductivity type and the second concentration is relatively strong and regions in which the activation of the impurities of the first conductivity type and the second concentration is relatively weak are repeatedly alternately arranged.

7. The device of claim 5 ,

wherein the first laser annealing process is performed in a manner that at least one of the laser energy and the annealing time is differentially applied to the regions in which the activation of the impurities of the first conductivity type is relatively strong and the regions in which the activation of the impurities of the first conductivity type is relatively weak, such that the regions in which the activation of the impurities of the first conductivity type is relatively strong and the regions in which the activation of the impurities of the first conductivity type is relatively weak are repeatedly alternately arranged in the field stop region.

8. The device of claim 6 ,

wherein the first laser annealing process is performed in a manner that at least one of the laser energy and the annealing time is differentially applied to the regions in which the activation of the impurities of the first conductivity type is relatively strong and the regions in which the activation of the impurities of the first conductivity type is relatively weak, such that the regions in which the activation of the impurities of the first conductivity type is relatively strong and the regions in which the activation of the impurities of the first conductivity type is relatively weak are repeatedly alternately arranged in the field stop region.