Semiconductor device and manufacturing method thereof
A semiconductor device may include: a first and a second semiconductor elements; and a first and a second insulated substrates each including an insulator layer and a metal layer disposed on each of two faces of the insulator layer, the metal layers respectively on one face of the first and the second insulated substrate being connected to the first and the second semiconductor element, wherein the metal layers respectively on the one face of the first and the second insulated substrate are electrically connected via a joint each other; the joint is constituted of a separate member from the insulated substrates; and one end of the joint is connected to the metal layer on the one face of the first insulated substrate, and another end of the joint is connected to the metal layer on the one face of the second insulated substrate.
1. A semiconductor device comprising:
a first semiconductor element and a second semiconductor element;
a first insulated substrate comprising an insulator layer and a metal layer disposed on each of two faces of the insulator layer, the metal layer on one face of the first insulated substrate being connected to the first semiconductor element; and
a second insulated substrate comprising an insulator layer and a metal layer disposed on each of two faces of the insulator layer, the metal layer on one face of the second insulated substrate being connected to the second semiconductor element,
wherein
the metal layer on the one face of the first insulated substrate is electrically connected to the metal layer on the one face of the second insulated substrate via a joint;
the joint is constituted of a separate member from the first insulated substrate and the second insulated substrate; and
one end of the joint is attached to the metal layer on the one face of the first insulated substrate, and another end of the joint is attached to the metal layer on the one face of the second insulated substrate.
2. The semiconductor device according to claim 1 , wherein
a recess part is provided in the metal layer on the one face of at least one of the first insulated substrate and the second insulated substrate, and the one or the other end of the joint is connected to the recess part.
3. The semiconductor device according to claim 2 , wherein
the recess part of the first insulated substrate has a depth smaller than a thickness of the metal layer on the one face of the first insulated substrate, and/or
the recess part of the second insulated substrate has a depth smaller than a thickness of the metal layer on the one face of the second insulated substrate.
4. The semiconductor device according to claim 1 , wherein
at least a part of the metal layer on the one face of the first insulated substrate is opposed to at least a part of the metal layer on the one face of the second insulated substrate.
5. A method of manufacturing the semiconductor device according to claim 1 , the method comprising:
preparing the first insulated substrate, the second insulated substrate, and the joint respectively; and
bonding the one end of the joint to the metal layer on the one face of the first insulated substrate, and bonding the other end of the joint to the metal layer on the one face of the second insulated substrate.
6. The semiconductor device according to claim 1 , wherein
the one end of the joint is bonded to the metal layer on the one face of the first insulated substrate via solder, and
the other end of the joint is bonded to the metal layer on the one face of the second insulated substrate via solder.
7. The semiconductor device according to claim 1 , the semiconductor device further comprising:
a third insulated substrate opposed to the first insulated substrate with the first semiconductor element interposed therebetween; and
a fourth insulated substrate opposed to the second insulated substrate with the second semiconductor element interposed therebetween,
wherein
the third insulated substrate comprises an insulator layer and a metal layer disposed on each of two faces of the insulator layer, the metal layer on one face of the third insulated substrate being connected to the first semiconductor element; and
the fourth insulated substrate comprises an insulator layer and a metal layer disposed on each of two faces of the insulator layer, the metal layer on one face of the fourth insulated substrate being connected to the second semiconductor element.
8. The semiconductor device according to claim 7 , the semiconductor device further comprising an encapsulant that encapsulates the first semiconductor element and the second semiconductor element,
wherein
the encapsulant comprises a first surface and a second surface located opposite the first surface,
the metal layer on another face of the first insulated substrate and the metal layer on another face of the fourth insulated substrate are exposed at the first surface of the encapsulant, and
the metal layer on another face of the second insulated substrate and the metal layer on another face of the third insulated substrate are exposed at the second surface of the encapsulant.
9. A semiconductor device comprising:
a first semiconductor element and a second semiconductor element, the first semiconductor element and the second semiconductor element each including an electrode;
a first insulated substrate comprising an insulator layer and a metal layer disposed on each of two faces of the insulator layer, the metal layer on one face of the first insulated substrate being connected to the first semiconductor element; and
a second insulated substrate comprising an insulator layer and a metal layer disposed on each of two faces of the insulator layer, the metal layer on one face of the second insulated substrate being connected to the second semiconductor element,
wherein
the metal layer on the one face of the first insulated substrate is electrically connected to the metal layer on the one face of the second insulated substrate via a joint;
the joint is constituted of a separate member from the first insulated substrate and the second insulated substrate; and
one end of the joint is connected to the metal layer on the one face of the first insulated substrate, and another end of the joint is connected to the metal layer on the one face of the second insulated substrate.
10. The semiconductor device according to claim 9 , wherein
a recess part is provided in the metal layer on the one face of at least one of the first insulated substrate and the second insulated substrate, and the one or the other end of the joint is connected to the recess part.
11. The semiconductor device according to claim 10 , wherein
the recess part of the first insulated substrate has a depth smaller than a thickness of the metal layer on the one face of the first insulated substrate, and/or
the recess part of the second insulated substrate has a depth smaller than a thickness of the metal layer on the one face of the second insulated substrate.
12. The semiconductor device according to claim 9 , wherein
at least a part of the metal layer on the one face of the first insulated substrate is opposed to at least a part of the metal layer on the one face of the second insulated substrate.
13. A method of manufacturing the semiconductor device according to claim 9 , the method comprising:
preparing the first insulated substrate, the second insulated substrate, and the joint respectively; and
bonding the one end of the joint to the metal layer on the one face of the first insulated substrate, and bonding the other end of the joint to the metal layer on the one face of the second insulated substrate.
14. The semiconductor device according to claim 9 , wherein
the one end of the joint is bonded to the metal layer on the one face of the first insulated substrate via solder, and
the other end of the joint is bonded to the metal layer on the one face of the second insulated substrate via solder.
15. The semiconductor device according to claim 9 , the semiconductor device further comprising:
a third insulated substrate opposed to the first insulated substrate with the first semiconductor element interposed therebetween; and
a fourth insulated substrate opposed to the second insulated substrate with the second semiconductor element interposed therebetween,
wherein
the third insulated substrate comprises an insulator layer and a metal layer disposed on each of two faces of the insulator layer, the metal layer on one face of the third insulated substrate being connected to the first semiconductor element; and
the fourth insulated substrate comprises an insulator layer and a metal layer disposed on each of two faces of the insulator layer, the metal layer on one face of the fourth insulated substrate being connected to the second semiconductor element.
16. The semiconductor device according to claim 15 , the semiconductor device further comprising an encapsulant that encapsulates the first semiconductor element and the second semiconductor element,
wherein
the encapsulant comprises a first surface and a second surface located opposite the first surface,
the metal layer on another face of the first insulated substrate and the metal layer on another face of the fourth insulated substrate are exposed at the first surface of the encapsulant, and
the metal layer on another face of the second insulated substrate and the metal layer on another face of the third insulated substrate are exposed at the second surface of the encapsulant.